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| Presentation | 2016-04-14 11:25 A 64kb 16nm Asynchronous Disturb Current Free 2-Port SRAM with PMOS Pass-Gates for FinFET Technologies Hidehiro Fujiwara, Li-Wen Wang, Yen-Huei Chen, Koo-Cheng Lin, Dar Sun, Shin-Rung Wu, Jhon-Jhy Liaw, Chin-Yung Lin, Mu-Chi Chiang, Hung-Jen Liao, Shien-Yang Wu, Jonathan Chang (TSMC) |
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| PDF Download Link |  ICD2016-4 Link to ES Tech. Rep. Archives: ICD2016-4 |
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