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Presentation |
2015-11-26 13:35
Electrical characterization of lightly Si-doped homoepitaxitial n-type GaN studied by Hall-effect measurement Naoki Sawada (Kyoto Univ.), Tetsuo Narita, Tetsu Kachi, Tsutomu Uesugi (TOYOTA Central R&D Labs.), Masahiro Horita, Jun Suda (Kyoto Univ.) |
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ED2015-73 CPM2015-108 LQE2015-105 Link to ES Tech. Rep. Archives: ED2015-73 CPM2015-108 LQE2015-105 |
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