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Presentation |
2006-01-19 13:20
AlGaN/GaN HFETs with a low-temperature GaN cap layer Tadayoshi Deguchi, Eiji Waki, Satoru Ono, Meiichi Yamashita, Atsushi Kamada, Atsushi Nakagawa (New Japan Radio), Hiroyasu Ishikawa, Takashi Egawa (Nagoya Institute of Technology) |
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Link to ES Tech. Rep. Archives: ED2005-203 MW2005-157 |
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