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Presentation 2013-11-29 09:55
Deep-level transient spectroscopy study on defect levels in Eu,Si-codoped GaN grown by organometallic vapor phase epitaxy
Souichirou Kuwata, Atsushi Koizumi, Yasufumi Fujiwara (Osaka Univ.)
PDF Download Link ED2013-78 CPM2013-137 LQE2013-113 Link to ES Tech. Rep. Archives: ED2013-78 CPM2013-137 LQE2013-113
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