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| Presentation | 2013-11-29 11:00 Growth of GaN with thin 3C-SiC buffer layer on Si(111) substrate Masayoshi Katagiri, Kenta Izumi, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Hidehiko Oku, Hidetoshi Asamura, Keisuke Kawamura (Air Water R&D) |
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| PDF Download Link |  ED2013-79 CPM2013-138 LQE2013-114 Link to ES Tech. Rep. Archives: ED2013-79 CPM2013-138 LQE2013-114 |
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