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| Presentation | 2012-05-18 11:15 Characterization of recombination centers in p-type 4H-SiC induced by low-energy electron irradiation Kazuki Yoshihara, Masashi Kato, Masaya Ichimura (NIT), Tomoaki Hatayama (NAIST), Takeshi Ohshima (JAEA) |
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| PDF Download Link |  ED2012-31 CPM2012-15 SDM2012-33 Link to ES Tech. Rep. Archives: ED2012-31 CPM2012-15 SDM2012-33 |
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