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Presentation |
2012-03-05 11:20
Highly Reliable BEOL-Transistor with oxygen-controlled InGaZnO channel and Gate/Drain Offset design Kishou Kaneko, Naoya Inoue, Shinobu Saito, Naoya Furutake, Hiroshi Sunamura, Jun Kawahara, Masami Hane, Yoshihiro Hayashi (Renesas Electronics) |
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SDM2011-178 Link to ES Tech. Rep. Archives: SDM2011-178 |
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