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| Presentation | 2010-01-14 15:05 AlGaN channel high electron mobility transistors on AlN substrates. Shin Hashimoto, Katsushi Akita, Tatsuya Tanabe, Hideaki Nakahata (SEI), Kenichiro Takeda, Hiroshi Amano (Meijo Univ.) |
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| PDF Download Link |  ED2009-188 MW2009-171 Link to ES Tech. Rep. Archives: ED2009-188 MW2009-171 |
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