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| Presentation | 2023-11-30 13:05 AlGaInN/GaN highhigh-electron mobility transistors with a thin unintentionally doped GaN channel and an AlN back barrier formed using a single single-crystal AlN substrate Tomoyuki Kawaide, Yoshinobu Kometani, Sakura Tanaka, Takashi Egawa, Makoto Miyoshi (Nagoya Inst. Tech) |
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| PDF Download Link |  ED2023-14 CPM2023-56 LQE2023-54 |
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