Information and Systems-Image Engineering(Date:2023/01/30)

Presentation
[Invited Talk] Integration Design and Process of 3-D Heterogeneous 6T SRAM with Double Layer Transferred Ge/2Si CFET and IGZO Pass Gates for 42% Reduced Cell Size

Chang Wenhsin(****),  

[Date]2023-01-30
[Paper #]SDM2022-79
[Invited Talk] A c-axis aligned crystalline IGZO FET and a 0.06-?m2 HfO2-based Capacitor 1T1C FeRAM with High Voltage Tolerance and 10-ns Write Time

Kazuaki Ohshima(SEL),  Masami Endo(SEL),  Shiyuu Numata(SEL),  Yuji Egi(SEL),  Fumito Isaka(SEL),  Toshikazu Ohno(SEL),  Sachiaki Tezuka(SEL),  Toshiki Hamada(SEL),  Kazuma Furutani(SEL),  Kazuki Tsuda(SEL),  Takanori Matsuzaki(SEL),  Tatsuya Onuki(SEL),  Tsutomu Murakawa(SEL),  Hitoshi Kunitake(SEL),  Masaharu Kobayashi(The Univ. of Tokyo),  Shunpei Yamazaki(SEL),  

[Date]2023-01-30
[Paper #]SDM2022-80
[Invited Talk] 25 nm iPMA-type Hexa-MTJ with solder reflow capability and endurance >107 for eFlash-type MRAM

Hiroshi Naganuma(Tohoku Univ.),  

[Date]2023-01-30
[Paper #]SDM2022-81
[Invited Talk] Design guidlines for SBD integration into SiC-MOSFET breaking RonA- diode conduction capability trade-off

Shunsuke Asaba(Toshiba D&S),  Masaru Furukawa(Toshiba D&S),  Yuji Kusumoto(Toshiba D&S),  Ryosuke Iijima(Toshiba),  Hiroshi Kono(Toshiba D&S),  

[Date]2023-01-30
[Paper #]SDM2022-82
[Invited Talk] Non-volatile Mid-infrared Phase Change Material Optical Phase Shifter Based on Ge2Sb2Te3S2

Yuto Miyatake(Univ. of Tokyo),  Kotaro Makino(AIST),  Junji Tominaga(AIST),  Noriyuki Miyata(AIST),  Takashi Nakano(AIST),  Makoto Okano(AIST),  Kasidit Toprasertpong(Univ. of Tokyo),  Shinichi Takagi(Univ. of Tokyo),  Mitsuru Takenaka(Univ. of Tokyo),  

[Date]2023-01-30
[Paper #]SDM2022-83
[Invited Talk] Resonant Tunneling Diode Technology for Future Terahertz Applications

Safumi Suzuki(Tokyo Insutitute of Tech.),  

[Date]2023-01-30
[Paper #]SDM2022-84