Information and Systems-Image Engineering(Date:2019/06/21)

Presentation
New Operation Mode of VO2-Channel Mott Transistors for Ultra-Sharp ON/OFF Switching

Takeaki Yajima(Univ. of Tokyo),  Yusuke Samata(JST),  Tomonori Nishimura(JST),  Akira Toriumi(JST),  

[Date]2019-06-21
[Paper #]SDM2019-32
[Invited Lecture] Necessity of 2D/3D nano metrology from the point of semiconductor devices

Koji Usuda(Toshiba Memory Co.),  

[Date]2019-06-21
[Paper #]SDM2019-29
[Invited Lecture] Three-Dimensional Structural Observation for Nanoscale Devices and Crystal defects

Kazuhiko Omote(Rigaku),  Yoshiyasu Ito(Rigaku),  

[Date]2019-06-21
[Paper #]SDM2019-31
[Invited Lecture] Nano-scale elasticity evaluation by ultrasonic atomic force microscopy

Toshihiro Tsuji(Tohoku Univ.),  Kazushi Yamanaka(Ball Wave),  

[Date]2019-06-21
[Paper #]
First principle simulation about phase change of superlattice GeTe/Sb2Te3

Yutaro Ogawa(Nagoya Univ.),  Hiroaki Nohara(Nagoya Univ.),  Hiroki Shirakawa(Nagoya Univ.),  Masaaki Araidai(Nagoya Univ.),  Kenji Shiraishi(Nagoya Univ.),  

[Date]2019-06-21
[Paper #]SDM2019-33
Formation of Ultrathin Segregated-Ge Crystal on Al/Ge(111) Surface by Thermal Annealing

Masato Kobayashi(Nagoya Univ.),  Akio Ohta(Nagoya Univ.),  Masashi Kurosawa(Nagoya Univ.),  Masaaki Araidai(Nagoya Univ.),  Noriyuki Taoka(Nagoya Univ.),  Mitsuhisa Ikeda(Nagoya Univ.),  Katsunori Makihara(Nagoya Univ.),  Seiichi Miyazaki(Nagoya Univ.),  

[Date]2019-06-21
[Paper #]SDM2019-27
[Invited Lecture] Observation of three dimensional atomic arrangements of active and inactive impurities heavy doped in silicon by using photoelectron holography method

Kazuo Tsutsui(Tokyo Tech),  Tomohiro Matsushita(JASRI),  Kotaro Natori(Tokyo Tech),  Tatsuhiro Ogawa(Tokyo Tech),  Takayuki Muro(JASRI),  Yoshitada Morikawa(Osaka Univ.),  Takuya Hoshii(Tokyo Tech),  Kuniyuki Kakushima(Tokyo Tech),  Hitoshi Wakabayashi(Tokyo Tech),  Kouichi Hayashi(Nagoya Inst. Tech.),  Fumihiko Matsui(Inst. Molecular Science),  Toyohiko Kinoshita(JASRI),  

[Date]2019-06-21
[Paper #]SDM2019-30
Mechanism of strain relaxation enhancement by ion implantation method for group-IV semiconductor alloy thin film

Hidetaka Sofue(Nagoya Univ.),  Masahiro Fukuda(Nagoya Univ.),  Shigehisa Shibayama(Nagoya Univ.),  Shigeaki Zaima(Meijo Univ.),  Osamu Nakatsuka,(Nagoya Univ.),  

[Date]2019-06-21
[Paper #]SDM2019-28
Ultra-low resistance contact for n-type Ge1-xSnx with in-situ Sb heavily doping and nickel stanogermanide formation

Jihee Jeon(Nagoya Univ.),  Akihiro Suzuki(Nagoya Univ.),  Shigehisa Shibayama(Nagoya Univ.),  Shigeaki Zaima(Nagoya Univ.),  Osamu Nakatsuka(Nagoya Univ.),  

[Date]2019-06-21
[Paper #]SDM2019-26
Chemical Structure and Electronic States of HfSiOx/GaN(0001)

Akio Ohta(Nagoya Univ.),  Katunori Makihara(Nagoya Univ.),  Toshihide Nabatame(NIMS),  Koji Shiozaki(Nagoya Univ.),  Seiichi Miyazaki(Nagoya Univ.),  

[Date]2019-06-21
[Paper #]SDM2019-35
Depth Profiling of Nitrogen Atoms in No-annealed SiO2/4H-SiC Structures

Takuji Hosoi(Osaka Univ.),  Kidist Moges(Osaka Univ.),  Mitsuru Sometani(AIST),  Takayoshi Shimura(Osaka Univ.),  Shinsuke Harada(AIST),  Heiji Watanabe(Osaka Univ.),  

[Date]2019-06-21
[Paper #]SDM2019-25
Evaluation of Interface Characteristics in GaN-MOS Capacitors with Boron-doped Al2O3 Gate Insulators

Manato Deki(Nagoya Univ.),  Shin Okude(Nagoya Univ.),  Yuto Ando(Nagoya Univ.),  Hirotaka Watanabe(Nagoya Univ.),  Atsushi Tanaka(Nagoya Univ.),  Maki Kushimoto(Nagoya Univ.),  Shugo Nitta(Nagoya Univ.),  Yoshio Honda(Nagoya Univ.),  Hiroshi Amano(Nagoya Univ.),  

[Date]2019-06-21
[Paper #]SDM2019-34