IEICE Technical Committee

[Date]2018-11-08
[Paper #]SDM2018-67

[Invited Talk] SISPAD 2018 Review

Kenichiro Sonoda(Renesas Electronics),

[Date]2018-11-08
[Paper #]SDM2018-64

[Invited Talk] High Resolution CMOS Ion Image Sensors and Its Application for Biomedical Fields

Kazuaki Sawada(Toyohashi Tech.), YouNa Lee(Toyohashi Tech.), Yasuyuki Kimura(Toyohashi Tech.), Tatsuya Iwata(Toyohashi Tech.), Kazuhiro Takahashi(Toyohashi Tech.), Toshiaki Hattori(Toyohashi Tech.),

[Date]2018-11-08
[Paper #]SDM2018-69

[Invited Talk] Proposal and device design of tunneling field effect transistor with oxide semiconductor and group-IV semiconductor

Kimihiko Kato(Univ. Tokyo), Hiroaki Matsui(Univ. Tokyo), Hitoshi Tabata(Univ. Tokyo), Mitsuru Takenaka(Univ. Tokyo), Shinichi Takagi(Univ. Tokyo),

[Date]2018-11-08
[Paper #]SDM2018-66

[Invited Talk] Development of the evaluation method of the strength of polycrystalline materials based on the order of atom arrangement and its application to the strength evaluation of electroplated copper thin films

Ken Suzuki(Tohoku Univ.), Yifan Luo(Tohoku Univ.), Hideo Miura(Tohoku Univ.),

[Date]2018-11-08
[Paper #]SDM2018-68

[Invited Talk] Development and Education of Electron Devices assisted with Computer Simulation

Ken Uchida(Univ. of Tokyo), Takahisa Tanaka(Keio Univ.),

[Date]2018-11-08
[Paper #]SDM2018-65

Study of new stacked type logic circuit scheme with fabrication technology of 3D flash memory.

Fumiya Suzuki(Shonan Inst. of Tech), Sigeyoshi Watanabe(Shonan Inst. of Tech),

[Date]2018-11-09
[Paper #]SDM2018-75

[Invited Talk] Topography Simulation of Trench-Filling Growth of 4H-SiC

Kazuhiro Mochizuki(AIST), Shiyang Ji(AIST), Ryoji Kosugi(AIST), Yoshiyuki Yonezawa(AIST), Hajime Okumura(AIST),

[Date]2018-11-09
[Paper #]SDM2018-70

[Invited Talk] Analysis of Charge Transport in Amorphous Organic Thin Films

Hironori Kaji(Kyoto Univ.),

[Date]2018-11-09
[Paper #]SDM2018-72

[Invited Talk] Device Simulation of Field-Effect Transistor Using Ferroelectric Negative Capacitance

Junichi Hattori(AIST), Tsutomu Ikegami(AIST), Koichi Fukuda(AIST), Hiroyuki Ota(AIST), Shinji Migita(AIST), Hidehiro Asai(AIST),

[Date]2018-11-09
[Paper #]SDM2018-74

[Invited Talk] Characteristics and Ultralow Voltage Rectification Experiment on MOS Diode connection using Super Steep SS PN-Body Tied SOI-FET

Shun Momose(KIT), Jiro Ida(KIT), Takuya Yamada(KIT), Takayuki Mori(KIT), Kenji Itoh(KIT), Koichiro Ishibashi(UEC), Yasuo Arai(KEK),

[Date]2018-11-09
[Paper #]SDM2018-76

[Invited Talk] Review of Recent Sensor Devices Research based on Semiconductor Technologies

Shigeyasu Uno(Ritsumeikan Univ.),

[Date]2018-11-09
[Paper #]SDM2018-73

[Invited Talk] Modeling of Electron Transport in 4H-SiC MOS Inversion Layers

Hajime Tanaka(Osaka Univ.), Nobuya Mori(Osaka Univ.),

[Date]2018-11-09
[Paper #]SDM2018-71