Information and Systems-Image Engineering(Date:2018/06/25)

Presentation
First principle investigation of superlattice GeTe/Sb2Te3 phase change

Hiroaki Nohara(Nagoya Univ.),  Hiroki Shirakawa(Nagoya Univ.),  Masaaki Araidai(Nagoya Univ.),  Kenji Shiraishi(Nagoya Univ.),  

[Date]2018-06-25
[Paper #]SDM2018-24
Concern of Ferroelectric HfO2 Films Brought by Large Coercive Field

Shinji Migita(AIST),  Hiroyuki Ota(AIST),  Akira Toriumi(Univ. Tokyo),  

[Date]2018-06-25
[Paper #]SDM2018-25
Chemical Bonding Features and Thermal Stability at SiO2/GaN interfaces Formed by Remote O2 Plasma Enhanced CVD

Ryohei Matsuda(Nagoya Univ.),  Akio Ohta(Nagoya Univ.),  Noriyuki Taoka(AIST),  Mitsuhisa Ikeda(Nagoya Univ.),  Katsunori Makihara(Nagoya Univ.),  Mitsuaki Shimizu(AIST),  Seiichi Miyazaki(Nagoya Univ.),  

[Date]2018-06-25
[Paper #]SDM2018-22
XPS Study of Silicate Formation and Electrical Dipole at Y2O3/SiO2 Interfaces

Nobuyuki Fujimura(Nagoya Univ.),  Akio Ohta(Nagoya Univ.),  Mitsuhisa Ikeda(Nagoya Univ.),  Katsunori Makihara(Nagoya Univ.),  Seiichi Miyazaki(Nagoya Univ.),  

[Date]2018-06-25
[Paper #]SDM2018-26
Influence of native oxide layer on electrical characteristics of Al2O3/n-GaN capacitors

Kazuya Yuge(SIT),  Toshihide Nabatame(NIMS),  Yoshihiro Yoshikawa(NIMS),  Akihiko Ohi(NIMS),  Naoki Ikeda(NIMS),  Liwen Sang(NIMS),  Yasuo Koide(NIMS),  Tomoji Ohishi(SIT),  

[Date]2018-06-25
[Paper #]SDM2018-19
Control of SiO2/GaN Interface for High-performance GaN MOSFET

Tauji Hosoi(Osaka Univ.),  Takahiro Yamada(Osaka Univ.),  Mikito Nozaki(Osaka Univ.),  Tokio Takahashi(AIST),  Hisashi Yamada(AIST),  Mitsuaki Shimizu(AIST),  Akitaka Yoshigoe(JAEA),  Takayoshi Shimura(Osaka Univ.),  Heiji Watanabe(Osaka Univ.),  

[Date]2018-06-25
[Paper #]SDM2018-18
Comparative study of SiO2/GaN interface structures and properties between Ar and He as a mixture gas with oxygen for remote plasma chemical vapor deposition

Nguyen Xuan Truyen(Nagoya Univ.),  Noriyuki Taoka(AIST-NU GaN-OIL),  Akio Ohta(Nagoya Univ.),  Hisashi Yamada(AIST-NU GaN-OIL),  Tokio Takahashi(AIST-NU GaN-OIL),  Mitsuhisa Ikeda(Nagoya Univ.),  Makihara Katsunori(Nagoya Univ.),  Mitsuaki Shimizu(AIST-NU GaN-OIL),  Seiichi Miyazaki(Nagoya Univ.),  

[Date]2018-06-25
[Paper #]SDM2018-17
Evaluation of Interface State Density in GaN-MOS Capacitors on Miscut m-plane GaN Substrates

Manato Deki(Nagoya Univ.),  Yuto Ando(Nagoya Univ.),  Hirotaka Watanabe(Nagoya Univ.),  Atsushi Tanaka(Nagoya Univ.),  Maki Kushimoto(Nagoya Univ.),  Shugo Nitta(Nagoya Univ.),  Yoshio Honda(Nagoya Univ.),  Hiroshi Amano(Nagoya Univ.),  

[Date]2018-06-25
[Paper #]SDM2018-16
Modification of Al2O3/SiC interface by oxygen radical irradiation

Takuma Doi(Nagoya Univ.),  Wakana Takeuchi(AIT),  Mitsuo Sakashita(Nagoya Univ.),  Noriyuki Taoka(AIST),  Osamu Nakatsuka(Nagoya Univ.),  Shigeaki Zaima(Nagoya Univ.),  

[Date]2018-06-25
[Paper #]SDM2018-23
[Invited Lecture] Inversion channel diamond MOSFET

Tsubasa Matsumoto(Kanazawa Univ.),  Hiromitsu Kato(AIST),  Toshiharu Makino(AIST),  Masahiko Ogura(AIST),  Daisuke Takeuchi(AIST),  Takao Inokuma(Kanazawa Univ.),  Satoshi Yamasaki(AIST),  Norio Tokuda(Kanazawa Univ.),  

[Date]2018-06-25
[Paper #]SDM2018-20
[Invited Lecture] Recent progress and problem of Diamond device: Crystal quality of bulk and surface

Yukako Kato(AIST),  Kouhei Takizawa(Tokyo City Univ.),  Toshiharu Makino(AIST),  Hiromitsu Kato(AIST),  Masahiko Ogura(AIST),  Daisuke Takeuchi(AIST),  Satoshi Yamasaki(AIST),  Hiroshi Nohira(Tokyo City Univ.),  

[Date]2018-06-25
[Paper #]
[Invited Lecture] Progress in Diamond Field Effect Transistors

Hiroshi Kawarada(Waseda Univ.),  Nobutaka Oi(Waseda Univ.),  Bi Te(Waseda Univ.),  Shoichiro Imanishi(Waseda Univ.),  Masayuki Iwatakaki(Waseda Univ.),  Taichi Yabe(Waseda Univ.),  Atsushi Hiraiwa(Waseda Univ.),  

[Date]2018-06-25
[Paper #]SDM2018-21