Information and Systems-Image Engineering(Date:2017/04/20)

Presentation
[Invited Lecture] Sub-3 ns pulse with sub-100 uA switching of 1x-2x nm perpendicular MTJ for high-performance embedded STT-MRAM towards sub-20 nm CMOS

Daisuke Saida(Toshiba),  Saori Kashiwaad(Toshiba),  Megumi Yakabe(Toshiba),  Tadaomi Daibou(Toshiba),  Junichi Ito(Toshiba),  Hiroki Noguchi(Toshiba),  Keiko Abe(Toshiba),  Shinobu Fujita(Toshiba),  Miyoshi Fukumoto(Osaka Univ.),  Shinji Miwa(Osaka Univ.),  Yoshishige Suzuki(Osaka Univ.),  

[Date]2017-04-20
[Paper #]ICD2017-2
[Invited Lecture] A 1.0 V Operation NAND Flash Memory Program Voltage Generator Fabricated with Standard CMOS Process and NAND Flash Process for IoT Local Devices

Kota Tsurumi(Chuo Univ.),  Masahiro Tanaka(Chuo Univ.),  Ken Takeuchi(Chuo Univ.),  

[Date]2017-04-20
[Paper #]ICD2017-5
[Invited Talk] A 4Gb LPDDR2 STT-MRAM with Compact 9F2 1T1MTJ Cell and Hierarchical Bitline Architecture

Kenji Tsuchida(Toshiba),  Kwangmyoung Rho(SK hynix),  Dongkeun Kim(SK hynix),  Yutaka Shirai(Toshiba),  Jihyae Bae(SK hynix),  Tsuneo Inaba(Toshiba),  Hiromi Noro(Toshiba),  Hyunin Moon(SK hynix),  Sungwoong Chung(SK hynix),  Kazumasa Sunouchi(Toshiba),  Jinwon Park(SK hynix),  Kiseon Park(SK hynix),  Akihito Yamamoto(Toshiba),  Seoungju Chung(SK hynix),  Hyeongon Kim(SK hynix),  

[Date]2017-04-20
[Paper #]ICD2017-3
[Invited Lecture] First demonstration of FinFET Split-Gate MONOS for High-Speed and Highly-Reliable Embedded Flash in 16/14nm-node and beyond

Shibun Tsuda(Renesas Electronics),  Yoshiyuki Kawashima(Renesas Electronics),  Kenichiro Sonoda(Renesas Electronics),  Atsushi Yoshitomi(Renesas Electronics),  Tatsuyoshi Mihara(Renesas Electronics),  Shunichi Narumi(Renesas Electronics),  Masao Inoue(Renesas Electronics),  Seiji Muranaka(Renesas Electronics),  Takahiro Maruyama(Renesas Electronics),  Tomohiro Yamashita(Renesas Electronics),  Yasuo Yamaguchi(Renesas Electronics),  Digh Hisamoto(Hitachi),  

[Date]2017-04-20
[Paper #]ICD2017-7
[Invited Talk] Embedded Flash Technology for Automotive Applications

Masaya Nakano(Renesas Electronics),  Takashi Ito(Renesas Electronics),  Tadaaki Yamauchi(Renesas Electronics),  Yasuo Yamaguchi(Renesas Electronics),  Takashi Kono(Renesas Electronics),  Hideto Hidaka(Renesas Electronics),  

[Date]2017-04-20
[Paper #]ICD2017-8
[Invited Lecture] Voltage-Control Spintronics Memory(VoCSM) Having Potentials of Ultra-Low Energy-Consumption and High-Density

Hiroaki Yoda(Toshiba),  Naoharu Simomura(Toshiba),  Yuichi Osawa(Toshiba),  Satoshi Shiratori(Toshiba),  Yushi Kato(Toshiba),  Iguchi Tomoaki(Toshiba),  Yuzou Kamiguchi(Toshiba),  Buyandalai Altansargai(Toshiba),  Yoshiaki Saito(Toshiba),  Katsuhiko Koi(Toshiba),  Sugiyama Hideyuki(Toshiba),  Souichi Oikawa(Toshiba),  Shimizu Mariko(Toshiba),  Miaue Ishikawa(Toshiba),  Kazutaka Ikegami(Toshiba),  

[Date]2017-04-20
[Paper #]ICD2017-1
[Invited Lecture] TLC NAND Flash Memory Control Techniques to Reduce Errors of Read-Hot and Cold Data for Data Centers

Toshiki Nakamura(Chuo Univ.),  Atsuro Kobayashi(Chuo Univ.),  Ken Takeuchi(Chuo Univ.),  

[Date]2017-04-20
[Paper #]ICD2017-6
[Invited Talk] A 512Gb 3b/Cell Flash Memory on 64-Word-Line-Layer BiCS Technology

Ryuji Yamashita(WDC),  Sagar Magia(WDC),  Tsutomu Higuchi(Toshiba),  Kazuhide Yoneya(Toshiba),  Toshio Yamamura(Toshiba),  Hiroyuki Mizukoshi(WDC),  Shingo Zaitsu(WDC),  Minoru Yamashita(WDC),  Shunichi Toyama(WDC),  Norihiro Kamae(WDC),  Juan Lee(WDC),  Shuo Chen(WDC),  Jiawei Tao(WDC),  William Mak(WDC),  Xiaohua Zhang(WDC),  

[Date]2017-04-20
[Paper #]ICD2017-9
[Invited Talk] Study on Nano-Dot Structure Permanent Memory

Tsuyoshi Watanabe(Kobe Univ.),  Noriyuki Miura(Kobe Univ.),  Shijia Liu(Kobe Univ.),  Shigeki Imai(Kobe Univ.),  Makoto Nagata(Kobe Univ.),  

[Date]2017-04-20
[Paper #]ICD2017-4
[Invited Lecture] A 6.05-Mb/mm2 16-nm FinFET Double Pumping 1W1R 2-port SRAM with 313ps Read Access Time

Yohei Sawada(REL),  Makoto Yabuuchi(REL),  Masao Morimoto(REL),  Toshiaki Sano(RSD),  Yuichiro Ishii(REL),  Shinji Tanaka(REL),  Miki Tanaka(RSD),  Koji Nii(REL),  

[Date]2017-04-21
[Paper #]ICD2017-12
[Invited Lecture] A 55nm Ultra Low Leakage Deeply Depleted Channel Technology Optimized for Energy Minimization in Subthreshold SRAM and Logic

Harsh N. Patel(UVA),  Abhishek Roy(UVA),  Farah B. Yahya(UVA),  Ningxi Liu(UVA),  Benton Calhoun(UVA),  Akihiko Harada(FEA),  Kazuyuki Kumeno(MIFS),  Makoto Yasuda(MIFS),  Taiji Ema(MIFS),  

[Date]2017-04-21
[Paper #]ICD2017-11
[Invited Talk] A 1/2.3in 20Mpixel 3-Layer Stacked CMOS Image Sensor with DRAM

Tsutomu Haruta(Sony Semiconductor Solutions),  Tsutomu Nakajima(Sony Semiconductor Solutions),  Jun Hashizume(Sony Semiconductor Solutions),  Taku Umebayashi(Sony Semiconductor Solutions),  Hiroshi Takahashi(Sony Semiconductor Solutions),  Kazuo Taniguchi(Sony Semiconductor Solutions),  Masami Kuroda(Sony Semiconductor Solutions),  Hiroshi Sumihiro(Sony Semiconductor Solutions),  Koji Enoki(Sony Semiconductor Solutions),  Takatsugu Yamasaki(Sony Semiconductor Manufacturing),  Katsuya Ikezawa(Sony Semiconductor Solutions),  Atsushi Kitahara(Sony Semiconductor Solutions),  Masao Zen(Sony Semiconductor Solutions),  Masafumi Oyama(Sony Semiconductor Solutions),  Hiroki Koga(Sony Semiconductor Solutions),  

[Date]2017-04-21
[Paper #]ICD2017-18
[Invited Lecture] High-Density User-Programmable Logic Array Based on Adjacent Integration of Pure-CMOS Crossbar Antifuse into Logic CMOS Circuits

Shinichi Yasuda(Toshiba),  Masato Oda(Toshiba),  Mari Matsumoto(Toshiba),  Kosuke Tatsumura(Toshiba),  Koichiro Zaitsu(Toshiba),  Ying-Hao Ho(Toshiba),  Mizuki Ono(Toshiba),  

[Date]2017-04-21
[Paper #]ICD2017-15
[Invited Lecture] Architectures and energy performance of nonvolatile SRAM for core-level nonvolatile power-gating

Daiki Kitagata(Tokyo Inst. of Tech.),  Yusuke Shuto(Tokyo Inst. of Tech.),  Shuu'ichirou Yamamoto(Tokyo Inst. of Tech.),  Satoshi Sugahara(Tokyo Inst. of Tech.),  

[Date]2017-04-21
[Paper #]ICD2017-10
[Invited Lecture] Demonstration of HfO2-Based Ferroelectric Tunnel Junction (FTJ)

Marina Yamaguchi(Toshiba),  Shosuke Fujii(Toshiba),  Yuuichi Kamimuta(Toshiba),  Tsunehiro Ino(Toshiba),  Riichiro Takaishi(Toshiba),  Yasushi Nakasaki(Toshiba),  Masumi Saitoh(Toshiba),  

[Date]2017-04-21
[Paper #]ICD2017-16
[Invited Lecture] Embedded Memory and ARM Cortex-M0 Core Using 60-nm CAAC-IGZO FET Integrated with 65-nm Si CMOS

Tatsuya Onuki(Semiconductor Energy Laboratory),  Atsuo Isobe(Semiconductor Energy Laboratory),  Yoshinori Ando(Semiconductor Energy Laboratory),  Satoru Okamoto(Semiconductor Energy Laboratory),  Kiyoshi Kato(Semiconductor Energy Laboratory),  T R Yew(United Microelectronics Corporation),  Chen Bin Lin(United Microelectronics Corporation),  J Y Wu(United Microelectronics Corporation),  Chi Chang Shuai(United Microelectronics Corporation),  Shao Hui Wu(United Microelectronics Corporation),  James Myers(ARM),  Klaus Doppler(Nokia Technologies),  Masahiro Fujita(The Univ. of Tokyo),  Shunpei Yamazaki(Semiconductor Energy Laboratory),  

[Date]2017-04-21
[Paper #]ICD2017-17
[Invited Lecture] A 2x Logic Density Programmable Logic Array using Atom Switch

Yukihide Tsuji(NEC),  Xu Bai(NEC),  Ayuka Morioka(NEC),  Miyamura Makoto(NEC),  Ryusuke Nebashi(NEC),  Toshitsugu Sakamoto(NEC),  Munehiro Tada(NEC),  Naoki Banno(NEC),  Koichiro Okamoto(NEC),  Noriyuki Iguchi(NEC),  Hiromitsu Hada(NEC),  Tadahiko Sugibayashi(NEC),  

[Date]2017-04-21
[Paper #]ICD2017-14
[Invited Lecture] Highly reliable Cu atom switch using thermally tolerant Polymer-solid Electrolyte (TT-PSE) for Nonvolatile Programmable Logic

Koichiro Okamoto(NEC),  Munehiro Tada(NEC),  Naoki Banno(NEC),  Noriyuki Iguchi(NEC),  Hiromitsu Hada(NEC),  Toshitsugu Sakamoto(NEC),  Makoto Miyamura(NEC),  Yukihide Tsuji(NEC),  Ryusuke Nebashi(NEC),  Ayuka Morioka(NEC),  Xu Bai(NEC),  Tadahiko Sugibayashi(NEC),  

[Date]2017-04-21
[Paper #]ICD2017-13