Information and Systems-Image Engineering(Date:2016/01/20)

Presentation
[Invited Lecture] Evaluation technology for SiC wafer and device characteristics

Makoto Kitabatake(FUPET),  

[Date]2016-01-20
[Paper #]ED2015-112
[Invited Lecture] Low On-resistance SiC-MOSFET with Blocking Voltage of 3.3kV and Realization of the World's First All-SiC Traction Inverter

Kenji Hamada(Mitsubishi Electric),  Shiro Hino(Mitsubishi Electric),  Naruhisa Miura(Mitsubishi Electric),  Hiroshi Watanabe(Mitsubishi Electric),  Shuhei Nakata(Mitsubishi Electric),  Eisuke Suekawa(Mitsubishi Electric),  Yuji Ebiike(Mitsubishi Electric),  Masayuki Imaizumi(Mitsubishi Electric),  Isao Umezaki(Mitsubishi Electric),  Satoshi Yamakawa(Mitsubishi Electric),  

[Date]2016-01-20
[Paper #]ED2015-113
[Invited Lecture] Improvement in fmax of InP-based HEMTs for THz ICs

Tsuyoshi Takahashi(Fujitsu Labs.),  Yoichi Kawano(Fujitsu Labs.),  Kozo Makiyama(Fujitsu Labs.),  Shoichi Shiba(Fujitsu Labs.),  Yasuhiro Nakasha(Fujitsu Labs.),  Naoki Hara(Fujitsu Labs.),  

[Date]2016-01-20
[Paper #]ED2015-118
Analysis of Millimeter Wave Oscillation in GaN HEMT Unit Cell

Shinsuke Watanabe(Mitsubishi Electric),  Shouhei Imai(Mitsubishi Electric),  Eigo Kuwata(Mitsubishi Electric),  Hidetoshi Koyama(Mitsubishi Electric),  Yoshitaka Kamo(Mitsubishi Electric),  Yoshitsugu Yamamoto(Mitsubishi Electric),  

[Date]2016-01-20
[Paper #]ED2015-119
[Invited Lecture] State-of-the-art technology of gallium oxide power devices

Masataka Higashiwaki(NICT),  Man Hoi Wong(NICT),  Keita Konishi(NICT),  Kohei Sasaki(Tamura/NICT),  Ken Goto(Tamura/TAT),  Kazushiro Nomura(TAT),  Quang Tu Thieu(TAT),  Rie Togashi(TAT),  Hisashi Murakami(TAT),  Yoshinao Kumagai(TAT),  Bo Monemar(TAT),  Akinori Koukitu(TAT),  Akito Kuramata(Tamura),  Takekazu Masui(Tamura),  Shigenobu Yamakoshi(Tamura),  

[Date]2016-01-20
[Paper #]ED2015-114
[Invited Lecture] The unique features of GaN power devices and the technologies to utilize their innate advantages

Ken Nakahara(ROHM),  Kentaro Chikamatsu(ROHM),  Atsushi Yamaguchi(ROHM),  Naotaka Kuroda(ROHM),  

[Date]2016-01-20
[Paper #]ED2015-115
[Invited Lecture] Development of GaN-HEMT for Microwave Applications

Takahisa Kawai(SEDI),  

[Date]2016-01-20
[Paper #]ED2015-120
[Invited Lecture] Estimation of RF-DC conversion efficiency of microwave power Shottky barrier diodes for rectenna by small equivalent circuit model

Toshiyuki Oishi(Saga Univ.),  Makoto Kasu(Saga Univ.),  

[Date]2016-01-20
[Paper #]ED2015-116
[Invited Lecture] GaN Schottky Barrier Diode and Microwave Power Transmission

Yasuo Ohno(LaS),  

[Date]2016-01-20
[Paper #]ED2015-117