IEICE Technical Committee

Information and Systems-Image Engineering(Date:2015/11/26)

Presentation

Determination of internal quantum efficiency in GaN by simultaneous measurements of photoluminescence and photo-acoustic signals

Takashi Nakano(KIT), Kouhei Kawakami(KIT), Atsushi A. Yamaguchi(KIT),

[Date]2015-11-26
[Paper #]ED2015-78,CPM2015-113,LQE2015-110

Analysis of radiative and non-radiative lifetimes in GaN using accurate internal-quantum-efficiency values estimated by simultaneous photoluminescence and photo-acoustic measurements

Kohei Kawakami(KIT), Takashi Nakano(KIT), Atsushi A Yamaguchi(KIT),

[Date]2015-11-26
[Paper #]ED2015-77,CPM2015-112,LQE2015-109

A high current operation in a 1.6 kV GaN-based trench hybrid-junction diode (THD)

Ryo Kajitani(Panasonic), Hiroyuki Handa(Panasonic), Shinji Ujita(Panasonic), Daisuke Shibata(Panasonic), Masahiro Ogawa(Panasonic), Kenichiro Tanaka(Panasonic), Hidetoshi Ishida(Panasonic), Satoshi Tamura(Panasonic), Masahiro Ishida(Panasonic), Tetsuzo Ueda(Panasonic),

[Date]2015-11-26
[Paper #]ED2015-75,CPM2015-110,LQE2015-107

[Invited Talk] Spatio-time-resolved cathodoluminescence studies on Si-doped high AlN mole fraction AlxGa1-xN multiple quantum wells grown on an AlN epitaxial templates

Shigefusa Chichibu(Tohoku U.), Hifdeto Miyake(Mie-U), Kazumasa Hiramatsu(Mie-U),

[Date]2015-11-26
[Paper #]ED2015-76,CPM2015-111,LQE2015-108

Electronic and optical characteristics of an m-plane freestanding GaN substrate grown by hydride vapor phase epitaxy on a GaN seed crystal synthesized by the ammonothermal method using an acidic mineralizer

Kazunobu Kojima(Tohoku Univ.), Yusuke Tsukada(MCC), Erika Furukawa(Tohoku Univ.), Makoto Saito(Tohoku Univ.), Yutaka Mikawa(MCC), Shuichi Kubo(MCC), Hirotaka Ikeda(MCC), Kenji Fujito(MCC), Akira Uedono(Tsukuba Univ.), Shigefusa F. Chichibu(Tohoku Univ.),

[Date]2015-11-26
[Paper #]ED2015-71,CPM2015-106,LQE2015-103

Multi-wavelength excited Raman scattering spectroscopy for InGaN single layers

Ryosuke Ishido(Kyoto Univ.), Ryota Ishii(Kyoto Univ.), Mitsuru Funato(Kyoto Univ.), Yoichi Kawakami(Kyoto Univ.),

[Date]2015-11-26
[Paper #]ED2015-79,CPM2015-114,LQE2015-111

AlN growth on AlN/Sapphire substrate by RF-HVPE

Daiki Yasui(Mie Univ.), Hideto Miyake(Mie Univ.), Kazumasa Hiramatsu(Mie Univ.), Motoaki Iwaya(Meijo Univ.), Isamu Akasaki(Meijo Univ.), Hiroshi Amano(Nagoya Univ.),

[Date]2015-11-26
[Paper #]ED2015-70,CPM2015-105,LQE2015-102

Growth of AlN with annealing on different misoriented c-plane sapphire

Shuhei Suzuki(Mie Univ.), Chia-Hung Lin(Mie Univ.), Hideto Miyake(Mie Univ.), Kazumasa Hiramatsu(Mie Univ.), Hiroyuki Fukuyama(Tohoku Univ.),

[Date]2015-11-26
[Paper #]ED2015-69,CPM2015-104,LQE2015-101

Analysis of hole concentration and mobility of lightly Mg-doped p-type GaN by Hall-effect measurements

Masahiro Horita(Kyoto Univ.), Shinya Takashima(Fuji Electric), Ryo Tanaka(Fuji Electric), Hideaki Matsuyama(Fuji Electric), Katsunori Ueno(Fuji Electric), Masaharu Edo(Fuji Electric), Jun Suda(Kyoto Univ.),

[Date]2015-11-26
[Paper #]ED2015-72,CPM2015-107,LQE2015-104

Electrical characterization of lightly Si-doped homoepitaxitial n-type GaN studied by Hall-effect measurement

Naoki Sawada(Kyoto Univ.), Tetsuo Narita(TOYOTA Central R&D Labs.), Tetsu Kachi(TOYOTA Central R&D Labs.), Tsutomu Uesugi(TOYOTA Central R&D Labs.), Masahiro Horita(Kyoto Univ.), Jun Suda(Kyoto Univ.),

[Date]2015-11-26
[Paper #]ED2015-73,CPM2015-108,LQE2015-105

Photoresponse of Homoepitaxial N-type GaN Schottky Barrier Diodes

Takuya Maeda(Kyoto Univ.), Masaya Okada(Sumitomo electric industries,Ltd.), Yoshiyuki Yamamoto(Sumitomo electric industries), Masaki Ueno(Sumitomo electric industries), Masahiro Horita(Kyoto Univ.), Jun Suda(Kyoto Univ.),

[Date]2015-11-26
[Paper #]ED2015-74,CPM2015-109,LQE2015-106

Plasmonics with Aluminum applied to emission enhancements

Koichi Okamoto(Kyushu Univ.), Kazutaka Tateishi(Kyushu Univ.), Shun Kawamoto(Kyushu Univ.), Haruku Nishida(Kyushu Univ.), Kaoru Tamada(Kyushu Univ.), Mitsuru Funato(Kyoto Univ.), Yoichi Kawakami(Kyoto Univ.),

[Date]2015-11-26
[Paper #]ED2015-80,CPM2015-115,LQE2015-112

Study on AlGaN formation on alpha-(AlGa)2O3 by surface nitridation using radio frequency nitrogen plasma

Tsutomu Araki(Ritsumeikan Univ.), Akira Buma(Ritsumeikan Univ.), Nao Masuda(Ritsumeikan Univ.), Yasushi Nanishi(Ritsumeikan Univ.), Masaya Oda(FLOSFIA), Toshimi Hitora(FLOSFIA),

[Date]2015-11-26
[Paper #]ED2015-68,CPM2015-103,LQE2015-100

Interface states and device characteristics of AlGaN/GaN MIS-HEMTs with HfO2 fabricated by atomic layer deposition

Gosuke Nishino(NITech), Toshiharu Kubo(NITech), Takashi Egawa(NITech),

[Date]2015-11-27
[Paper #]ED2015-82,CPM2015-117,LQE2015-114

Evaluation of the bonding interface of multi-junction solar cell according to smart stack technology

Shoichiro Nonaka(Tokyo Univ. of Science), Akio Furukawa(Tokyo Univ. of Science), Kikuo Makita(AIST), Hidenori Mizuno(AIST), Takeyoshi Sugaya(AIST), Shigeru Niki(AIST),

[Date]2015-11-27
[Paper #]ED2015-88,CPM2015-123,LQE2015-120

High-temperature growth of a-AlGaN/AlN and its optical properties

Masafumi Jo(RIKEN), Hideki Hirayama(RIKEN),

[Date]2015-11-27
[Paper #]ED2015-85,CPM2015-120,LQE2015-117

Dependence of the initial AlN layer of the vertical direction leakage current of the AlGaN/GaN HEMT structure on Silicon substrate

Yuya Yamaoka(TNSC), Kazuhiro Ito(NITech), Akinori Ubukata(TNSC), Toshiya Tabuchi(TNSC), Koh Matsumoto(TNSC), Takashi Egawa(NITech),

[Date]2015-11-27
[Paper #]ED2015-83,CPM2015-118,LQE2015-115

Improved Properties in InGaN-based Solar Cells by surface passivation process.

Kabata(Nagoya Inst of Tech), Tsutsumi Tatsuya(Nagoya Inst of Tech), Miyoshi Makoto(Nagoya Inst of Tech), Egawa Takashi(Nagoya Inst of Tech),

[Date]2015-11-27
[Paper #]ED2015-87,CPM2015-122,LQE2015-119

Growth and optical properties of semi-polar AlGaN/AlN layers grown on m-plane sapphire substrates

Issei Oshima(Saitama Univ./RIKEN), Masafumi Jo(RIKEN), Noritoshi Maeda(RIKEN), Norihiko Kamata(Saitama Univ.), Hideki Hirayama(RIKEN),