Information and Systems-Image Engineering(Date:2015/04/16)

Presentation
[Invited Talk] Reliability enhancement techniques of TLC NAND Flash Solid-State Drives (SSDs) for archive and enterprise applications

Shogo Hachiya(Chuo Univ.),  Shuhei Tanakamaru(Chuo Univ.),  Tsukasa Tokutomi(Chuo Univ.),  Masafumi Doi(Chuo Univ.),  Yuta Kitamura(Chuo Univ.),  Senju Yamazaki(Chuo Univ.),  Atsuro Kobayashi(Chuo Univ.),  Ken Takeuchi(Chuo Univ.),  

[Date]2015-04-16
[Paper #]ICD2015-5
[Invited Lecture] 40 nm Dual-port and Two-port SRAMs for Automotive MCU Applications under the Wide Temperature Range of -40 to 170℃ with Test Screening Against Write Disturb Issues

Yoshisato Yokoyama(Renesas Electronics),  Yuichiro Ishii(Renesas Electronics),  Tatsuya Fukuda(Renesas Electronics),  Yoshiki Tsujihashi(Renesas Electronics),  Atsushi Miyanishi(Renesas Electronics),  Shinobu Asayama(Renesas Semiconductor Manufacturing Corporation),  Keiichi Maekawa(Renesas Semiconductor Manufacturing Corporation),  Kazutoshi Shiba(Renesas Semiconductor Manufacturing Corporation),  Koji Nii(Renesas Electronics),  

[Date]2015-04-16
[Paper #]ICD2015-3
[Panel Discussion] Advanced semiconductor memories in cloud computing and high-performance computing

Koji Nii(Renesas Electronics),  Kousuke Miyaji(Shinshu Univ.),  Ryousei Takano(AIST),  Kensei Takagi(SanDisk),  Toru Miwa(SanDisk),  

[Date]2015-04-16
[Paper #]ICD2015-7
[Invited Talk] A 28nm Embedded SG-MONOS Flash Macro for Automotive Achieving 200MHz Read Operation and 2.0MB/s Write Throughput at Tj of 170℃

Makoto Muneyasu(Renesas),  Yasuhiko Taito(Renesas),  Masaya Nakano(Renesas),  Takashi Ito(Renesas),  Takashi Kono(Renesas),  Kenji Noguchi(Renesas),  Hideto Hidaka(Renesas),  Tadaaki Yamauchi(Renesas),  

[Date]2015-04-16
[Paper #]ICD2015-4
[Invited Lecture] A 512-kb 1-GHz 28-nm Partially Write Assisted Dual-Port SRAM with Self Adjustable Negative Bias Bitline

Shinji Tanaka(Renesas Electronics),  Yuichiro Ishii(Renesas),  Makoto Yabuuchi(Renesas),  Toshiaki Sano(Renesas System Design),  Koji Tanaka(Renesas),  Yasumasa Tsukamoto(Renesas),  Koji Nii(Renesas),  Hirotoshi Sato(Renesas),  

[Date]2015-04-16
[Paper #]ICD2015-2
[Invited Lecture] A Low-Power 64Gb MLC NAND-Flash Memory in 15nm CMOS Technology

Mario Sako(Toshiba),  Takao Nakajima(Toshiba),  Junpei Sato(Toshiba),  Kazuyoshi Muraoka(Toshiba),  Masaki Fujiu(Toshiba),  Fumihiro Kono(Toshiba),  Michio Nakagawa(Toshiba),  Masami Masuda(Toshiba),  Koji Kato(Toshiba),  Yuri Terada(Toshiba),  Yuki Shimizu(Toshiba),  Mitsuaki Honma(Toshiba),  Yoshinao Suzuki(Toshiba),  Yoshihisa Watanabe(Toshiba),  Ryuji Yamashita(SanDisk),  

[Date]2015-04-16
[Paper #]ICD2015-6
[Invited Lecture] 20nm High-Density Single-Port and Dual-Port SRAMs with Wordline-Voltage-Adjustment System for Read/Write Assists

Makoto Yabuuchi(Renesas),  Yasumasa Tsukamoto(Renesas),  Masao Morimoto(Renesas),  Miki Tanaka(Renesas),  Koji Nii(Renesas),  

[Date]2015-04-16
[Paper #]ICD2015-1
[Invited Talk] Non-Contact Memory Interface using Transmission Line Coupler

Atsutake Kosuge(Keio Univ.),  Junichiro Kadomoto(Keio Univ.),  Tadahiro Kuroda(Keio Univ.),  

[Date]2015-04-17
[Paper #]ICD2015-14
[Invited Talk] GexTe1-x/Sb2Te3 Topological switching random access memory (TRAM)

Norikatsu Takaura(LEAP),  

[Date]2015-04-17
[Paper #]ICD2015-8
[Invited Lecture] A 2.4 pJ Ferroelectric-Based Non-Volatile Flip-Flop with 10-Year Data Retention Capability

Hiromitsu Kimura(ROHM),  Takaaki Fuchikami(ROHM),  Kyoji Marumoto(ROHM),  Yoshikazu Fujimori(ROHM),  Shintaro Izumi(Kobe Univ.),  Hiroshi Kawaguchi(Kobe Univ.),  Masahiko Yoshimoto(Kobe Univ.),  

[Date]2015-04-17
[Paper #]ICD2015-11
[Invited Lecture] An Inductive-Coupling Interface Using Partially Overlapping Coil for WIO2 and Beyond

Yasuhiro Take(Keio Univ.),  Tadahiro Kuroda(Keio Univ.),  

[Date]2015-04-17
[Paper #]ICD2015-15
[Tutorial Lecture] Nonvolatile Logic-in-Memory Architecture and Its Applications to Low-Power VLSI System

Takahiro Hanyu(Tohoku Univ.),  Daisuke Suzuki(Tohoku Univ.),  Akira Mochizuki(Tohoku Univ.),  Masanori Natsui(Tohoku Univ.),  Naoya Onizawa(Tohoku Univ.),  Tadahiko Sugibayashi(NEC),  Shoji Ikeda(Tohoku Univ.),  Tetsuo Endoh(Tohoku Univ.),  Hideo Ohno(Tohoku Univ.),  

[Date]2015-04-17
[Paper #]ICD2015-12
[Invited Talk] An 1800-Times-Higher Power-Efficient 20k-spin Ising Chip for Combinatorial Optimization Problem with CMOS Annealing

Masanao Yamaoka(Hitachi),  Chihiro Yoshimura(Hitachi),  Masato Hayashi(Hitachi),  Takuya Okuyama(Hitachi),  Hidetaka Aoki(Hitachi),  Hiroyuki Mizuno(Hitachi),  

[Date]2015-04-17
[Paper #]ICD2015-13
[Invited Talk] A 128kb 4bit/cell Nonvolatile Memory with Crystalline In-Ga-Zn Oxide FET Using Vt Cancel Write Method

Takanori Matsuzaki(SEL),  Tatsuya Onuki(SEL),  Shuhei Nagatsuka(SEL),  Hiroki Inoue(SEL),  Takahiko Ishizu(SEL),  Yoshinori Ieda(SEL),  Masayuki Sakakura(SEL),  Tomoaki Atsumi(SEL),  Yutaka Shionoiri(SEL),  Kiyoshi Kato(SEL),  Takashi Okuda(SEL),  Yoshitaka Yamamoto(SEL),  Masahiro Fujita(The Univ. of Tokyo),  Jun Koyama(SEL),  Shunpei Yamazaki(SEL),  

[Date]2015-04-17
[Paper #]ICD2015-9
[Invited Talk] Low-power Embedded Perpendicular STT-MRAM Design for Cache Memory

Hiroki Noguchi(Toshiba),  Kazutaka Ikegami(Toshiba),  Keiichi Kushida(Toshiba),  Keiko Abe(Toshiba),  Shogo Itai(Toshiba),  Satoshi Takaya(Toshiba),  Chika Tanaka(Toshiba),  Chikayoshi Kamata(Toshiba),  Minoru Amano(Toshiba),  Eiji Kitagawa(Toshiba),  Naoharu Shimomura(Toshiba),  Atsushi Kawasumi(Toshiba),  Hiroyuki Hara(Toshiba),  Junichi Ito(Toshiba),  Shinobu Fujita(Toshiba),  

[Date]2015-04-17
[Paper #]ICD2015-10