Engineering Sciences/NOLTA-VLSI Design Technologies(Date:2005/09/20)

Presentation
表紙

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[Date]2005/9/20
[Paper #]
目次

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[Date]2005/9/20
[Paper #]
Roadmap and TCAD

Tetsunori WADA,  

[Date]2005/9/20
[Paper #]VLD2005-42,SDM2005-161
Development of Inverse Model System and 2-D Profile Extraction

Hirotaka KOMATSUBARA,  Masafumi TSUTSUI,  Tetsunori WADA,  

[Date]2005/9/20
[Paper #]VLD2005-43,SDM2005-162
Impact of Non-uniform Potential Fluctuation at the Gate/Oxide Interface on Device Characteristics by 2D Fractal Pattern Analysis

Yoshio ASHIZAWA,  Hideki OKA,  

[Date]2005/9/20
[Paper #]VLD2005-44,SDM2005-163
Performance Investigation of Field-Emission Device Surrounded by High-k Dielectric (FESH)

Kensuke MURASHIMA,  Kenji KOMIYA,  Yasuhisa OMURA,  

[Date]2005/9/20
[Paper #]VLD2005-45,SDM2005-164
Analysis of the Scaling Feasibility in Strained Si Device Including Current Direction Dependencies

Ryo Tanabe,  Takahiro Yamasaki,  Yoshio Ashizawa,  Hideki Oka,  

[Date]2005/9/20
[Paper #]VLD2005-46,SDM2005-165
Carrier Scattering Limited Drive Current in Nano-Scaled MOSFETs

Hideaki TSUCHIYA,  Azusa Oda,  Kazuya FUJII,  Tanroku MIYOSHI,  

[Date]2005/9/20
[Paper #]VLD2005-47,SDM2005-166
Numerical Simulation of Electron Tunneling in Systems Fluctuating in Space and Time

Atsushi SAKAI,  Yoshinari KAMAKURA,  Kenji TANIGUCHI,  

[Date]2005/9/20
[Paper #]VLD2005-48,SDM2005-167
Surface electron density in a quantum effect simulation

Toshiyuki TAKANI,  Toru TOYABE,  

[Date]2005/9/20
[Paper #]VLD2005-49,SDM2005-168
Density-Gradient Analysis of MOSFET, DGSOI and TriGateSOI

Hiroyuki TAKASHINO,  Yasuyuki OHKURA,  Toshiyuki ENDA,  Tetsunori WADA,  

[Date]2005/9/20
[Paper #]VLD2005-50,SDM2005-169
Acoustic Phonon Scattering in a Free-Standing Silicon Slab

Nobuya MORI,  Shigeyasu UNO,  

[Date]2005/9/20
[Paper #]VLD2005-51,SDM2005-170
Mobility Enhancement in SGT in the Strong Inversion Region

Wataru SAKAMOTO,  Hideo HANEDA,  Hiroshi SAKURABA,  Hiroki NAKAMURA,  Fujio MASUOKA,  

[Date]2005/9/20
[Paper #]VLD2005-52,SDM2005-171
Wafer Orientation Dependence of the C-V Characteristics due to QM Effects for the Surrounding Gate Transistor

Hideo HANEDA,  Wataru SAKAMOTO,  Iliya I. PESIC,  Hiroki NAKAMURA,  Hiroshi SAKURABA,  Fujio MASUOKA,  

[Date]2005/9/20
[Paper #]VLD2005-53,SDM2005-172
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[Date]2005/9/20
[Paper #]
Notice about photocopying

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[Date]2005/9/20
[Paper #]
奥付

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[Date]2005/9/20
[Paper #]