Engineering Sciences/NOLTA-VLSI Design Technologies(Date:1999/08/26)

Presentation
表紙

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[Date]1999/8/26
[Paper #]
目次

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[Date]1999/8/26
[Paper #]
Quantum Device Simulation of Ujtrasmalj MOSFET

Hideaki Tsuchiya,  Tanroku Miyoshi,  

[Date]1999/8/26
[Paper #]VLD99-44
An Efficient Method for Monte Carlo Ion Implantation Simulation

takahisa kanemura,  

[Date]1999/8/26
[Paper #]VLD99-45
Simulation of FN Tunneling Currents Including Realistic Structure of Gate Electrode

K. Matsuzawa,  H. Hazama,  H. Tanimoto,  

[Date]1999/8/26
[Paper #]VLD99-46
Anomalous Current Analysis in Memory Cells of Dynamic Random Access Memories (DRAM's) by Device Simulation

Ken Yamaguchi,  Tatsuya Teshima,  Hiroshi Mizuta,  

[Date]1999/8/26
[Paper #]VLD99-47
Calibration method for HDP-CVD simulation

S. Kinoshita,  H. Kawaguchi,   N. Shigyo,  

[Date]1999/8/26
[Paper #]VLD99-48
Novel Method of Mesh Handling in Two Dimensional Process Simulation.

Toshikazu Fukuda,  

[Date]1999/8/26
[Paper #]VLD99-49
Simulation for degradation of flash memory due to hole-induced charge traps in the tunnel oxide

Ayumi Yokozawa,  Takuya Kitamura,  Masato Kawata,  

[Date]1999/8/26
[Paper #]VLD99-50
Suppression of self-interstitial diffusion due to carbon

Hiroyuki Kobayashi,  Ryangsu Kim,  Jianxin Xia,  Tomoya Saito,  Yosinari Kamakura,  Kenji Taniguchi,  

[Date]1999/8/26
[Paper #]VLD99-51
[OTHERS]

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[Date]1999/8/26
[Paper #]