Engineering Sciences/NOLTA-VLSI Design Technologies(Date:1998/10/23)

Presentation
表紙

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[Date]1998/10/23
[Paper #]
目次

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[Date]1998/10/23
[Paper #]
A Systematic and Physically Based Method of Extracting a Unified Parameter Set for a Point-Defect Diffusion Model

Hironori Sakamoto,  Shigetaka Kumashiro,  

[Date]1998/10/23
[Paper #]VLD98-86,ED98-111,SDM98-147,ICD98-217
Calibration of TCAD for sub quarter micron MOSFET simulation

Osamu Nishio,  Masahiro Takenaka,  Nobuyuki Ohminami,  Akio Kawamura,  Katsumasa Fujii,  

[Date]1998/10/23
[Paper #]VLD98-87,ED98-112,SDM98-148,ICD98-218
Profile Measurement and Simulation of Impurity Diffusion in SOI Substrate

Yasushi Ieki,  Hiroshi Asai,  Hideo Uchida,  Masaya Ichimura,  Chunlin Shao,  Eisuke Arai,  

[Date]1998/10/23
[Paper #]VLD98-88,ED98-113,SDM98-149,ICD98-219
A New Model of Phosphorus Distribution in the SOI Structure

T Ishiyama,  S Matsumoto,  T Sakai,  T yachi,  

[Date]1998/10/23
[Paper #]VLD98-89,ED98-114,SDM98-150,ICD98-220
Simulation Analysis of SCM Measurements

K Matsuzawa,  Y Oowaki,  M Nakamura,  N Aoki,  I Mizushima,  

[Date]1998/10/23
[Paper #]VLD98-90,ED98-115,SDM98-151,ICD98-221
The Examination of Validity of the Effective Chanel Length Extraction Method with TCAD

Makoto Kidera,  Motoaki Tanizawa,  Kiyoshi Ishikawa,  TAdashi Nishimura,  

[Date]1998/10/23
[Paper #]VLD98-91,ED98-116,SDM98-152,ICD98-222
A Self-Consistent Analysis of Two-Dimensional Electron Gas in HEMT structure using Monte Carlo Simulation II

T. Fukada,  M. Nakazato,  Y. Kohyama,  N. Tanino,  

[Date]1998/10/23
[Paper #]VLD98-92,ED98-117,SDM98-153,ICD98-223
Device-Size Dependence of Current Fluctuation Simulation under Ultra-Small Device Structures

Yoshiyuki Kitahara,  Nobuyuki Sano,  Kenji Natori,  Mikio Mukai,  Kazuya Matsuzawa,  

[Date]1998/10/23
[Paper #]VLD98-93,ED98-118,SDM98-154,ICD98-224
A Threshold Voltage Model of SOI MOSFET's

T. Toyabe,  L.V. Kalachev,  

[Date]1998/10/23
[Paper #]VLD98-94,ED98-119,SDM98-155,ICD98-225
Process and Device Simulation of MOSFET Snapback Characteristics

N. Miura,  K. Hisaka,  K. Fukuda,  Y. Fukuda,  K. Nishi,  

[Date]1998/10/23
[Paper #]VLD98-95,ED98-120,SDM98-156,ICD98-226
Numerical Simulation of GaAs MESFET on Semi-insulating Substrate under Large Signal Operation

Yuji Takahashi,  Kazuaki Kunihiro,  Yasuo Ohno,  

[Date]1998/10/23
[Paper #]VLD98-96,ED98-121,SDM98-157,ICD98-227
High Voltage MOS Device Modeling with BSIM3v3 and its Parameter Extraction Technique

T. Myono,  S. Kikuchi,  K. Iwatsu,  E. Nishibe,  T. Suzuki,  Y. Sasaki,  K. Itoh,  H. Kobayashi,  

[Date]1998/10/23
[Paper #]VLD98-97,ED98-122,SDM98-158,ICD98-228
A proposal of a high-speed quasi-two dimensional method for MOSFET device simulation

Y. Ohkura,  M. Nanba,  

[Date]1998/10/23
[Paper #]VLD98-98,ED98-123,SDM98-159,ICD98-229
[OTHERS]

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[Date]1998/10/23
[Paper #]