Engineering Sciences/NOLTA-VLSI Design Technologies(Date:1997/09/25)

Presentation
表紙

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[Date]1997/9/25
[Paper #]
目次

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[Date]1997/9/25
[Paper #]
Development of a Universal Diffusion Scheme for a Two-Dimensional Process Simulator

Shigetaka Kumashiro,  Hironori Sakamoto,  

[Date]1997/9/25
[Paper #]VLD97-45,ED97-83,SDM97-104,ICD97-120
Simulation of transient enhanced diffusion

Masashi UEMATSU,  

[Date]1997/9/25
[Paper #]VLD97-46,ED97-84,SDM97-105,ICD97-121
An Implementation of Transient Enhanced Diffusion Model into the FEM-based 2-D Process Simulator FFEAST

N. Sugiyasu,  K. Suzuki,  S. Kojima,  Y. Ohyama,  H. Goto,  

[Date]1997/9/25
[Paper #]VLD97-47,ED97-85,SDM97-106,ICD97-122
Accurate modeling of nMOSFET inversion layer mobility by an empirical method for local field model

Takuji TANAKA,  Seiichiro YAMAGUCHI,  Hiroyuki KANATA,  Hiroshi GOTO,  

[Date]1997/9/25
[Paper #]VLD97-48,ED97-86,SDM97-107,ICD97-123
Grid Size Independent Inversion Layer Carrier Mobility Model

Toshiyuki Enda,  Naoyuki Shigyo,  

[Date]1997/9/25
[Paper #]VLD97-49,ED97-87,SDM97-108,ICD97-124
Development of Automatic Simulation System for Basic CCD Characteristics

Keishi Tachikawa,  Takuya Umeda,  Hiroyuki Okada,  Yoshinori Oda,  Kanji Ohara,  

[Date]1997/9/25
[Paper #]VLD97-50,ED97-88,SDM97-109,ICD97-125
「半導体製造プロセス大規模シミュレーション実験(Virtual Wafer Fab.)の展開」 : TCADドリブンECADによる効率的開発支援システムの構築

Itaru Kamohara,  Andy Strachan,  Stephan Mueller,  Ivan Pesic,  

[Date]1997/9/25
[Paper #]VLD97-51,ED97-89,SDM97-110,ICD97-126
The essence of TCAD and the scheme for its research

Norihiko KOTANI,  

[Date]1997/9/25
[Paper #]VLD97-52,ED97-90,SDM97-111,ICD97-127
TCAD Based Statistical Analysis of MOSFET's

N. Shigyou,  T. Morishita,  K. Sugawara,  N. Wakita,  Y. Asahi,  

[Date]1997/9/25
[Paper #]VLD97-53,ED97-91,SDM97-112,ICD97-128
IC Process Optimization Using Technology CAD System

N. Miura,  K. Fukuda,  K. Nishi,  

[Date]1997/9/25
[Paper #]VLD97-54,ED97-92,SDM97-113,ICD97-129
A Minimization Scheme for a period of Process Simulator Development in TCAD : Development of Simulation Standard Libraries and an Application

Mitsutoshi Nakamura,  Takahiro Nakauchi,  Toshikazu Fukuda,  Naoki Kusunoki,  Takahisa Kanemura,  Sanae Fukuda,  

[Date]1997/9/25
[Paper #]VLD97-55,ED97-93,SDM97-114,ICD97-130
Scaling Methodology for Low Power Fully Depleted SOI MOSFET's and Comparison with Bulk MOSFET's

Makoto Takamiya,  Yuri Yasuda,  Toshiro Hiramoto,  

[Date]1997/9/25
[Paper #]VLD97-56,ED97-94,SDM97-115,ICD97-131
Simulation Study on Extraction Mechanism of Generated Holes in the Floating-body SOI MOSFETs

Kouichi NOSE,  Rimon IKENO,  Kunihiro ASADA,  

[Date]1997/9/25
[Paper #]VLD97-57,ED97-95,SDM97-116,ICD97-132
Convergence of a Device Simulation and Floating Body Effect of SOIMOSFETs

T. Saito,  T. Toyabe,  

[Date]1997/9/25
[Paper #]VLD97-58,ED97-96,SDM97-117,ICD97-133
[OTHERS]

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[Date]1997/9/25
[Paper #]