Engineering Sciences/NOLTA-VLSI Design Technologies(Date:1996/09/26)

Presentation
表紙

,  

[Date]1996/9/26
[Paper #]
目次

,  

[Date]1996/9/26
[Paper #]
Development of Aluminum sputter profile simulation including surface diffusion model

Hiroaki Yamada,  Hirokatsu Kaneko,  Yoshiaki Yamada,  Toshiyuki Ohta,  

[Date]1996/9/26
[Paper #]VLD96-34,ED96-80,SDM96-90
Simulation of B, P, and As diffusion in Si based on an integrated diffusion model

Masashi UENATSU,  

[Date]1996/9/26
[Paper #]VLD96-35,ED96-81,SDM96-91
A pair diffusion model for arsenic in silicon considering with interstitial silicon emission induced by arsenic deactivation

Masayuki Hiroi,  Takeo Ikezawa,  Masami Hane,  Hiroshi Matsumoto,  

[Date]1996/9/26
[Paper #]VLD96-36,ED96-82,SDM96-92
Parameter extractions of boron ion implantation using Genetic Algorithms

R. Sudo,  S. Kojima,  K. Suzuki,  M. Sato,  K. Suzuki,  

[Date]1996/9/26
[Paper #]VLD96-37,ED96-83,SDM96-93
A Triangular Mesh with the Interface Protection Layer Suitable for the Diffusion Simulation

Toshiyuki Syo,  Yutaka Akiyama,  Shigetaka Kumashiro,  Ikuhiro Yokota,  Susumu Asada,  

[Date]1996/9/26
[Paper #]VLD96-38,ED96-84,SDM96-94
Device Simulation by Means of Explicit Methods : Application to Large Problems

Mamoru Kurata,  Shin Nakamura,  

[Date]1996/9/26
[Paper #]VLD96-39,ED96-85,SDM96-95
Study on Point Allocation of 3D Mesh for Control Volume Method

Katsuhiko Tanaka,  Akio Notsu,  Hiroshi Matsumoto,  

[Date]1996/9/26
[Paper #]VLD96-40,ED96-86,SDM96-96
[OTHERS]

,  

[Date]1996/9/26
[Paper #]