Engineering Sciences/NOLTA-Information Theory(Date:2019/12/24)

Presentation
Evaluate interface charges and bulk oxide charges on SiO2/GaN MOS structure before and after post-metallization annealing

Masaaki Furukawa(NAIST),  Mutsunori Uenuma(NAIST),  Yasuaki Ishikawa(NAIST),  Yukiharu Uraoka(NAIST),  

[Date]2019-12-24
[Paper #]EID2019-5,SDM2019-80
Construction of CuInS2 nanoparticles through a bio-templated precursor by the cage-shaped protein for quantum devices

Yuma Karaki(NAIST),  Ryoko Miyanaga(NAIST),  Naofumi Okamoto(NAIST),  Yasuaki Ishikawa(NAIST),  Ichiro Yamashita(Osaka Univ.),  Yukiharu Uraoka(NAIST),  

[Date]2019-12-24
[Paper #]EID2019-6,SDM2019-81
Stable Growth of (100)-Oriented Low Angle Grain Boundary Silicon Thin Films Extending to the length of 3000 μm by a Continuous-Wave Laser Lateral Crystallization

Muhammad Arif Razali(NAIST),  Nobuo Sasaki(NAIST),  Yasuaki Ishikawa(NAIST),  Yukiharu Uraoka(NAIST),  

[Date]2019-12-24
[Paper #]