Electronics-Silicon Devices and Materials(Date:2022/11/10)

Presentation
[Invited Talk] Optimum Design of Channel Material and Surface Orientation for Extremely-Thin-Body nMOSFETs under Nonlinear Modeling of Surface Roughness Scattering

Kei Sumita(Univ. Tokyo),  Min-Soo Kang(Univ. Tokyo),  Chia-Tsong Chen(Univ. Tokyo),  Kasidit Toprasertpong(Univ. Tokyo),  Mitsuru Takenaka(Univ. Tokyo),  Shinichi Takagi(Univ. Tokyo),  

[Date]2022-11-10
[Paper #]SDM2022-65
[Invited Talk] Modeling Electrical Properties of CrSi Thin Films

Kenichiro Sonoda(Renesas Electronics),  Nobuhito Shiraishi(Renesas Electronics),  Kazuyoshi Maekawa(Renesas Electronics),  Nozomi Ito(Renesas Electronics),  Eiji Hasegawa(Renesas Electronics),  Tamotsu Ogata(Renesas Electronics),  

[Date]2022-11-10
[Paper #]SDM2022-67
[Invited Talk] GPGPU accelerated Monte Carlo Ion implantation simulation for high energy implantation

Fumie Machida(SRJ),  Hiroo Koshimoto(SRJ),  Yasuyuki Kayama(SRJ),  Alexander Schmidt(SEC),  Inkook Jang(SEC),  Satoru Yamada(SRJ),  Dae Sin Kim(SEC),  

[Date]2022-11-10
[Paper #]SDM2022-66
[Invited Talk] Simulation of CMOS circuit and single-electron transistors for readout of spin qubits

Tetsufumi Tanamoto(Teikyo Univ.),  

[Date]2022-11-10
[Paper #]SDM2022-68
[Invited Talk] Materials Simulation: What Classical Computers Can Do and What Only Quantum Computers Can Do

Yu-ichiro Matsushita(TokyoTech),  Jun-ichi Iwata(Quemix),  Taichi Kosugi(Quemix),  Tran Ba Hung(Quemix),  Yusuke Nishiya(Quemix),  Hirofumi Nishi(Quemix),  

[Date]2022-11-10
[Paper #]SDM2022-70
[Invited Talk] A study on the development of nanoscale device simulation method based on the use of gate-type quantum computing algorithm

Satofumi Souma(Kobe Univ.),  Shingo Matsuo(Kobe Univ.),  Takuya Ishibashi(Kobe Univ.),  

[Date]2022-11-10
[Paper #]SDM2022-69
[Invited Talk] Progress in CMOS Device Technology and IRDS Roadmap

Hitoshi Wakabayashi(Tokyo Tech),  

[Date]2022-11-10
[Paper #]SDM2022-64
[Invited Talk] Implementation of Compact Model of a Metal Oxide Molecule Sensor for Self-Heating Control

Yohsuke Shiiki(Keio Univ.),  Shintaro Nagata(Univ. Tokyo),  Tsunaki Takahashi(Univ. Tokyo),  Takeshi Yanagida(Univ. Tokyo),  Hiroki Ishikuro(Keio Univ.),  

[Date]2022-11-11
[Paper #]SDM2022-72
[Invited Talk] Reliable design of SiC Power Modules

Shuhei Fukunaga(Osaka Univ.),  Alberto Castellazzi(KUAS),  Tsuyoshi Funaki(Osaka Univ.),  

[Date]2022-11-11
[Paper #]SDM2022-76
[Invited Talk] Toward Super Temporal Resolution by Suppression of Mixing Effects of Electrons

Takeharu Goji Etoh(Osaka Univ.),  Kazuhiro Shimonomura(Ritsumeikan Univ.),  Taeko Ando(Ritsumeikan Univ.),  Yoshiyuki Matsunaga(Ritsumeikan Univ.),  Yutaka Hirose(Ritsumeikan Univ.),  Takayoshi Shimura(Osaka Univ.),  Heiji Watanabe(Osaka Univ.),  Yoshinari Kamakura(OIT),  Hideki Mutoh(Link Research),  

[Date]2022-11-11
[Paper #]SDM2022-71
Measurement and Modeling of Cycle-to-Cycle Variability in ReRAM Devices

Shoma Yoshimoto(OIT),  Masaki Takemori(OIT),  Yoshinari Kamakura(OIT),  

[Date]2022-11-11
[Paper #]SDM2022-78
[Invited Talk] Understanding of Electron Mobility Limiting Factor in Cryo-CMOS

Hiroshi Oka(AIST),  Takumi Inaba(AIST),  Shota Iizuka(AIST),  Hidehiro Asai(AIST),  Kimihiko Kato(AIST),  Takahiro Mori(AIST),  

[Date]2022-11-11
[Paper #]SDM2022-74
Modeling of Super Steep Subthreshold Slope Device by using Neural Network

Nakata Kengo(Kanazawa Inst. of Tech.),  Mori Takayuki(Kanazawa Inst. of Tech.),  Ida Jiro(Kanazawa Inst. of Tech.),  

[Date]2022-11-11
[Paper #]SDM2022-73
[Invited Talk] Evaluation and Modeling of Inversion Layer Mobility in Si-face 4H-SiC MOSFETs with Nitrided Gate Oxide

Munetaka Noguchi(Mitsubishi Electric Corp.),  Hiroshi Watanabe(Mitsubishi Electric Corp.),  Koji Kita(Tokyo Univ.),  Kazuyasu Nishikawa(Mitsubishi Electric Corp.),  

[Date]2022-11-11
[Paper #]SDM2022-75
[Invited Talk] SISPAD2022 Review

Satofumi Souma(Kobe Univ.),  

[Date]2022-11-11
[Paper #]SDM2022-77