Electronics-Silicon Devices and Materials(Date:2022/06/21)

Presentation
Formation of Ultra-Thin Nickel Silicide Layer with controlled Surface Morphology and Crystalline Phase on SiO2

Keisuke Kimura(Nagoya. Univ),  Noriyuki Taoka(Nagoya. Univ),  Shunsuke Nishimura(Nagoya. Univ),  Akio Ohta(Nagoya. Univ),  Katsunori Makihara(Nagoya. Univ),  Seiichi Miyazaki(Nagoya. Univ),  

[Date]2022-06-21
[Paper #]SDM2022-31
Formation of Al(111) Thin Layer on Si(111) and Control of Surface Si Segregation by Thermal Annealing

Taiki Sakai(Nagoya Univ.),  Keigo Matsushita(Nagoya Univ.),  Akio Ohta(Nagoya Univ.),  Noriyuki Taoka(Nagoya Univ.),  Katsunori Makihara(Nagoya Univ.),  Seiichi Miyazaki(Nagoya Univ.),  

[Date]2022-06-21
[Paper #]SDM2022-32
[Invited Talk] Superiority of counter-doped MOSFET from the viewpoint of oxide/4H-SiC interface property

Shigehisa Shibayama(Nagoya Univ.),  Takuma Doi(Nagoya Univ.),  Mitsuo Sakashita(Nagoya Univ.),  Noriyuki Taoka(Nagoya Univ.),  Mitsuaki Shimizu(AIST),  Osamu Nakatsuka(Nagoya Univ.),  

[Date]2022-06-21
[Paper #]SDM2022-24
Self-formation of Ge1-xSnx nanodots on insulator for multi-layer Ge1-xSnx quantum dots structure

Kaoru Hashimoto(Nagoya Univ.),  Shigehisa Shibayama(Nagoya Univ.),  Koji Asaka(Nagoya Univ.),  Osamu Nakatsuka(Nagoya Univ.),  

[Date]2022-06-21
[Paper #]SDM2022-25
Impacts of Surface Orientation of Si Substrate on Crystalline Structures and Chemical Composition of Hf-oxide Layers Formed by Post Oxidation

Wataru Yasuda(Nagoya Univ.),  Noriyuki Taoka(Nagoya Univ.),  Akio Ohta(Nagoya Univ.),  Katsunori Makihara(Nagoya Univ.),  Seiichi Miyazaki(Nagoya Univ.),  

[Date]2022-06-21
[Paper #]SDM2022-26
[Invited Talk] Low Voltage Operation of CMOS Inverter based on WSe2 n/p FETs

Takamasa Kawanago(Tokyo Tech),  Takahiro Matsuzaki(Tokyo Tech),  Ryosuke Kajikawa(Tokyo Tech),  Iriya Muneta(Tokyo Tech),  Takuya Hoshii(Tokyo Tech),  Kuniyuki Kakushima(Tokyo Tech),  Kazuo Tsutsui(Tokyo Tech),  Hitoshi Wakabayashi(Tokyo Tech),  

[Date]2022-06-21
[Paper #]SDM2022-30
[Invited Lecture] Electronic properties of heterostructures of transition metal dichalchogenides

Mina Maruyama(Univ. of Tsukuba),  

[Date]2022-06-21
[Paper #]SDM2022-29
[Invited Lecture] Study on the next-generation high frequency deivices using operando nano x-ray spectroscopy

Hirokakazu Fukidome(Tohoku Univ.),  

[Date]2022-06-21
[Paper #]SDM2022-27
[Invited Lecture] Study on TMD mixed crystal characteristics and novel precursor for low-temperature CVD.

Atsushi Ogura(Meiji Univ., MREL),  Ryo Yokogawa(Meiji Univ., MREL),  Hitoshi Wakabayashi(Tokyo Tech.),  

[Date]2022-06-21
[Paper #]SDM2022-28