Electronics-Silicon Devices and Materials(Date:2021/06/22)

Presentation
Application-induced TaOx ReRAM Cell Reliability Variation Tolerated High-speed Storage

Chihiro Matsui(Univ. Tokyo),  Ken Takeuchi(Univ. Tokyo),  

[Date]2021-06-22
[Paper #]SDM2021-27
[Memorial Lecture] Operation mechanism of Si/HZO ferroelectric FETs

Kasidit Toprasertpong(Univ. Tokyo),  Tsung-En Lee(Univ. Tokyo),  Zaoyang Lin(Univ. Tokyo),  Kento Tahara(Univ. Tokyo),  Kouhei Watanabe(Univ. Tokyo),  Mitsuru Takenaka(Univ. Tokyo),  Shinichi Takagi(Univ. Tokyo),  

[Date]2021-06-22
[Paper #]SDM2021-23
[Invited Lecture] Development of TFET-based qubits enabling high-temperature operation to realize silicon-based quantum computing

Takahiro Mori(AIST),  

[Date]2021-06-22
[Paper #]SDM2021-25
Influence of quantized bit precision and bit-error rate in Computation-in-Memory with ReRAM on optimal answers of combinatorial optimization problems

Naoko Misawa(Univ. Tokyo),  Kenta Taoka(Univ. Tokyo),  Shunsuke Koshino(Univ. Tokyo),  Chihiro Matsui(Univ. Tokyo),  Ken Takeuchi(Univ. Tokyo),  

[Date]2021-06-22
[Paper #]SDM2021-28
[Invited Lecture] For understanding ferroelectric HfO2 toward its device applications

Akira Toriumi(*),  

[Date]2021-06-22
[Paper #]SDM2021-26
[Memorial Lecture] Modification of states of metal copper and copper oxide due to isopropyl alcohol treatment

Takezo Mawaki(Tohoku Univ.),  Akinobu Teramoto(Hiroshima Univ.),  Katsutoshi Ishii(Tokyo Electron Technology Solutions),  Yoshinobu Shiba(Tohoku Univ.),  Tomoyuki Suwa(Tohoku Univ.),  Shuji Azumo(Tokyo Electron Technology Solutions),  Akira Shimizu(Tokyo Electron Technology Solutions),  Kota Umezawa(Tokyo Electron Technology Solutions),  Rihito Kuroda(Tohoku Univ.),  Yasuyuki Shirai(Tohoku Univ.),  Shigetoshi Sugawa(Tohoku Univ.),  

[Date]2021-06-22
[Paper #]SDM2021-22
Formation and Thickness Control of Ultrathin Ge Layer on Al and Ag/(111) Structures by Thermal Anneal

Akio Ohta(Nagoya Univ.),  Keigo Matsushita(Nagoya Univ.),  Noriyuki Taoka(Nagoya Univ.),  Katsunori Makihara(Nagoya Univ.),  Seiichi Miyazaki(Nagoya Univ.),  

[Date]2021-06-22
[Paper #]SDM2021-29
[Invited Lecture] FET characteristics with 2D channel

Hitoshi Wakabayashi(Tokyo Tech),  

[Date]2021-06-22
[Paper #]SDM2021-24