Electronics-Silicon Devices and Materials(Date:2019/11/07)

Presentation
Study of stacked type logic circuit with fabrication technology of 3D flash memory.

Fumiya Suzuki(Shonan Inst. of Tech.),  Shigeyoshi Watanabe(Shonan Inst. of Tech.),  

[Date]2019-11-07
[Paper #]SDM2019-73
[Invited Talk] Compact Modeling Bridging Industrial Applications

Mitiko Miura-Mattausch(HU),  

[Date]2019-11-07
[Paper #]SDM2019-72
[Invited Talk] Study on the scalability of ferroelectric HfO2 tunnel junction memory

Masaharu Kobayashi(Univ. Tokyo),  Fei Mo(Univ. Tokyo),  Yusaku Tagawa(Univ. Tokyo),  Takuya Saraya(Univ. Tokyo),  Toshiro Hiramoto(Univ. Tokyo),  

[Date]2019-11-07
[Paper #]SDM2019-69
[Invited Talk] SISPAD2019 Review

Yoshinari Kamakura(OIT),  

[Date]2019-11-07
[Paper #]SDM2019-68
[Invited Talk] Understanding the interface in 2D layered transistors

Kosuke Nagashio(UTokyo),  

[Date]2019-11-07
[Paper #]SDM2019-70
[Invited Talk] Surface Reaction Analyses for Atomic Scale Processing by Beam Experiments

Kazuhiro Karahashi(Osaka Univ.),  Tomoko Ito(Osaka Univ.),  Satoshi Hamaguchi(Osaka Univ.),  

[Date]2019-11-07
[Paper #]SDM2019-71
[Invited Talk] Fundamental Aspects of Semiconductor Device Modeling Associated with Discrete Impurities II

Nobuyuki Sano(Univ. Tsukuba),  

[Date]2019-11-08
[Paper #]SDM2019-75
[Invited Talk] Method and Investigation of TCAD Calibration for Saturation and Tail Current of 6.5kV IGBTs

Takeshi Suwa(TDSC),  Shigeaki Hayase(TDSC),  

[Date]2019-11-08
[Paper #]SDM2019-78
[Invited Talk] Measurement and Analysis Technologies of RTS Noise Toward Advanced CMOS Image Sensors Development

Rihito Kuroda(Tohoku Univ.),  

[Date]2019-11-08
[Paper #]SDM2019-79
[Invited Talk] Device Simulation of Dynamic Behavior of Ferroelectric Field-Effect Transistors

Junichi Hattori(AIST),  Tsutomu Ikegami(AIST),  Koichi Fukuda(AIST),  Hiroyuki Ota(AIST),  Shinji Migita(AIST),  Hidehiro Asai(AIST),  

[Date]2019-11-08
[Paper #]SDM2019-74
[Invited Talk] Three-dimensional accurate TCAD simulation of trench-gate Si-IGBTs

Masahiro Watanabe(Tokyo Tech.),  Naoyuki Shigyo(Tokyo Tech.),  Takuya Hoshii(Tokyo Tech.),  Kazuyoshi Furukawa(Tokyo Tech.),  Kuniyuki Kakushima(Tokyo Tech.),  Katsumi Satoh(Mitsubishi Electric Corp.),  Tomoko Matsudai(Toshiba Electronic Devices & Storage Corp.),  Takuya Saraya(The University of Tokyo),  Toshihiko Takakura(The University of Tokyo),  Kazuo Itou(The University of Tokyo),  Munetoshi Fukui(The University of Tokyo),  Shinichi Suzuki(The University of Tokyo),  Kiyoshi Takeuchi(The University of Tokyo),  Iriya Muneta(Tokyo Tech.),  Hitoshi Wakabayashi(Tokyo Tech.),  Akira Nakajima(AIST),  Shin-ichi Nishizawa(Kyushu University, Kasuga),  Kazuo Tsutsui(Tokyo Tech.),  Toshiro Hiramoto(The University of Tokyo),  Hiromichi Ohashi(Tokyo Tech.),  Hiroshi Iwai(Tokyo Tech.),  

[Date]2019-11-08
[Paper #]SDM2019-77
[Invited Talk] First-principles molecular dynamics simulations for SiC oxidation processes

Takahisa Ohno(NIMS),  

[Date]2019-11-08
[Paper #]SDM2019-76