Electronics-Silicon Devices and Materials(Date:2019/01/29)

Presentation
[Invited Talk] Multidomain Dynamics of Ferroelectric Polarization in Negative Capacitance State and its Impacts on Performances of Field-Effect Transistors

Hiroyuki Ota(AIST),  Tsutomu Ikegami(AIST),  Koichi Fukuda(AIST),  Junichi HattoriI(AIST),  Hidehiro Asai(AIST),  Kazuhiko Endo(AIST),  Shinji Migita(AIST),  Akira Toriumi(The Univ. of Tokyo),  

[Date]2019-01-29
[Paper #]SDM2018-81
[Invited Talk] Assessment of Steep-Subthreshold Swing Behaviors in Ferroelectric Field-Effect Transistors

Shinji Migita(AIST),  Hiroyuki Ota(AIST),  Akira Thorium(U. Tokyo),  

[Date]2019-01-29
[Paper #]SDM2018-82
[Invited Talk] Direct relationship between sub-60 mV/dec subthreshold swing and internal potential instability in MOSFET externally connected to ferroelectric capacitor

Li Xiuyan(Univ. of Tokyo),  Akira Toriumi(Univ. of Tokyo),  

[Date]2019-01-29
[Paper #]SDM2018-83
[Invited Talk] The Relationship between Polarization Switching and Subthreshold Behavior in HfO2-based Ferroelectric and Anti-ferroelectric FET: An Experimental Study

Chengji Jin(Univ. of Tokyo),  Kyungmin Jang(Univ. of Tokyo),  Takuya Saraya(Univ. of Tokyo),  Toshiro Hiramoto(Univ. of Tokyo),  Masaharu Kobayashi(Univ. of Tokyo),  

[Date]2019-01-29
[Paper #]SDM2018-84
[Invited Talk] Simulation study on Ferroelectric-HfO2 Tunnel Junction Memory Based on Non-equilibrium Green Function Method with Self-consistent Potential

Fei Mo(Univ. of Tokyo),  Yusaku Tagawa(Univ. of Tokyo),  Takuya Saraya(Univ. of Tokyo),  Toshiro Hiramoto(Univ. of Tokyo),  Masaharu Kobayashi(Univ. of Tokyo),  

[Date]2019-01-29
[Paper #]SDM2018-85
[Invited Talk] Highly Reliable Ferroelectric Hf0.5Zr0.5O2 Film with Al Nanoclusters Embedded by Sub-Monolayer Doping Technique

Tadashi Yamaguchi(Renesas),  Tiantian Zhang(Renesas),  Kazuyuki Omori(Renesas),  Yasuhiro Shimada(Renesas),  Yorinobu Kunimune(Renesas),  Takashi Ide(Renesas),  Masao Inoue(Renesas),  Masazumi Matsuura(Renesas),  

[Date]2019-01-29
[Paper #]SDM2018-86
[Invited Talk] Interface Dipole Modulation Memory based on Multi-stacked HfO2/SiO2 MOS Structure

Noriyuki Miyata(AIST),  Jun Nara(NIMS),  Takahiro Yamasaki(NIMS),  Kyoko Sumita(AIST),  Ryousuke Sano(TCU),  Hiroshi Nohira(TCU),  

[Date]2019-01-29
[Paper #]SDM2018-87
[Invited Talk] Demonstration of high-speed switching, high thermal stability, and high endurance in 128Mb-density STT-MRAM by development of integration process

Hideo Sato(Tohoku Univ.),  Tetsuo Endoh(Tohoku Univ.),  

[Date]2019-01-29
[Paper #]
[Invited Talk] Half pitch 14 nm direct pattering with Nanoimprint lithography

Tetsuro Nakasugi(Toshiba Memory Corp.),  

[Date]2019-01-29
[Paper #]SDM2018-88
[Invited Talk] Silicon Isotope Technology for Quantum Computing

Satoru Miyamoto(Keio Univ.),  Usami Noritaka(Nagoya Univ.),  Kohei M. Itoh(Keio Univ.),  

[Date]2019-01-29
[Paper #]SDM2018-89
[Invited Talk] Demonstration of 1200V Scaled IGBTs Driven by 5V Gate Voltage with Superiorly Low Switching Loss

Takuya Saraya(Univ. of Tokyo),  Kazuo Itou(Univ. of Tokyo),  Toshihiko Takakura(Univ. of Tokyo),  Munetoshi Fukui(Univ. of Tokyo),  Shinichi Suzuki(Univ. of Tokyo),  Kiyoshi Takeuchi(Univ. of Tokyo),  Masanori Tsukuda(GRIK),  Yohichiroh Numasawa(Meiji Univ.),  Katsumi Satoh(Mitsubishi Electric),  Tomoko Matsudai(Toshiba Electronic Devices & Storage),  Wataru Saito(Toshiba Electronic Devices & Storage),  Kuniyuki Kakushima(Tokyo Tech),  Takuya Hoshii(Tokyo Tech),  Kazuyoshi Furukawa(Tokyo Tech),  Masahiro Watanabe(Tokyo Tech),  Naoyuki Shigyo(Tokyo Tech),  Kazuo Tsutsui(Tokyo Tech),  Hiroshi Iwai(Tokyo Tech),  Atsushi Ogura(Meiji Univ.),  Shin-ichi Nishizawa(Kyushu Univ.),  Ichiro Omura(Kyushu Inst. of Tech.),  Hiromichi Ohashi(Tokyo Tech),  Toshiro Hiramoto(Univ. of Tokyo),  

[Date]2019-01-29
[Paper #]SDM2018-90