Electronics-Silicon Devices and Materials(Date:2018/10/17)

Presentation
[Invited Talk] Cr2Ge2Te6-Based PCRAM Showing Low Resistance Amorphous and High Resistance Crystalline States

Shogo Hatayama(Tohoku Univ.),  Yuji Sutou(Tohoku Univ.),  Daisuke Ando(Tohoku Univ.),  Junichi Koike(Tohoku Univ.),  

[Date]2018-10-17
[Paper #]SDM2018-56
New piezoelectric materials by RF sputtering process and applications to sensor

Fuminobu Imaizumi(NIT, Oyama College),  kousuke Yanagida(*),  

[Date]2018-10-17
[Paper #]SDM2018-53
[Invited Talk] Fin-FET MONOS for Next Generation Automotive-MCU

Shibun Tsuda(Renesas),  Tomoya Saito(Renesas),  Hirokazu Nagase(Renesas),  Yoshiyuki Kawashima(Renesas),  Atsushi Yoshitomi(Renesas),  Shinobu Okanishi(Renesas),  Tomohiro Hayashi(Renesas),  Takuya Maruyama(Renesas),  Masao Inoue(Renesas),  Seiji Muranaka(Renesas),  Shigeki Kato(Renesas),  Takuya Hagiwara(Renesas),  Hirokazu Saito(Renesas),  Tadashi Yamaguchi(Renesas),  Masaru Kadoshima(Renesas),  Takahiro Maruyama(Renesas),  Tatsuyoshi Mihara(Renesas),  Hiroshi Yanagita(Renesas),  Kenichiro Sonoda(Renesas),  Yasuo Yamaguchi(Renesas),  Tomohiro Yamashita(Renesas),  

[Date]2018-10-17
[Paper #]SDM2018-52
Fabrication process of Hf-based MONOS nonvolatile memory with Si(100) surface flattening process

Sohya Kudoh(Tokyo Tech.),  Yusuke Horiuchi(Tokyo Tech.),  Shun-ichiro Ohmi(Tokyo Tech.),  

[Date]2018-10-17
[Paper #]SDM2018-55
Low-Temperature Formation of Ohmic Contact for Si TFT Fabrication by Excimer Laser Doping with Phosphoric Acid Coating

Kaname Imokawa(Kyushu Univ),  Nozomu Tanaka(Kyushu Univ.),  Akira Suwa(Kyushu Univ),  Daisuke Nakamura(Kyushu Univ.),  Taizoh Sadoh(Kyushu Univ.),  Tetsuya Goto(New Industry Creation Hatchery Center, Tohoku Univ.),  Hiroshi Ikenoue(Kyushu Univ),  

[Date]2018-10-17
[Paper #]SDM2018-54
[Invited Talk] Promotion of Silicon Island in Kumamoto area and reconstruction from the earthquake disaster

Hiroshi Kubota(Kumamoto Univ.),  

[Date]2018-10-18
[Paper #]SDM2018-63
[Invited Talk] A lesson from Kumamoto earthquake disaster at Sony Semiconductor Manufacturing Kumamoto Technology Center

Hiromi Suzuki(Kumamoto Univ.),  Yasuhiro Ueda(Sony Corp.),  

[Date]2018-10-18
[Paper #]SDM2018-57
Process Evaluation of Si Nanowire for Thermoelectric Device by Raman Spectroscopy

Ryo Yokogawa(Meiji Univ.),  Motohiro Tomita(Waseda Univ.),  Takanobu Watanabe(Waseda Univ.),  Atsushi Ogura(Meiji Univ.),  

[Date]2018-10-18
[Paper #]SDM2018-61
Statistical Analysis of Electric Characteristics Variability Using MOSFETs with Asymmetric Source and Drain

Shinya Ichino(Tohoku Univ.),  Akinobu Teramoto(Tohoku Univ.),  Rihito Kuroda(Tohoku Univ.),  Takezo Mawaki(Tohoku Univ.),  Tomoyuki Suwa(Tohoku Univ.),  Shigetoshi Sugawa(Tohoku Univ.),  

[Date]2018-10-18
[Paper #]SDM2018-62
Improvement of Pentacene/SiO2 Interface Properties by the N-doped LaB6 Interfacial Layer

Yasutaka Maeda(Tokyo Tech),  Kyung Eun Park(Tokyo Tech),  Yuki Komatsu(Tokyo Tech),  Shun-ichiro Ohmi(Tokyo Tech),  

[Date]2018-10-18
[Paper #]SDM2018-60
Thin film formation of ferroelectric undoped HfO2 on Si(100) by RF magnetron sputtering

Min Gee Kim(Tokyo Tech.),  Rengie Mark D. Mailig(Tokyo Tech.),  Shun-ichiro Ohmi(Tokyo Tech.),  

[Date]2018-10-18
[Paper #]SDM2018-58
Schottky barrier height reduction of Pd2Si/Si(100) diodes by dopant segregation process

Rengie Mark D. Mailig(Tokyo Tech.),  Min Gee Kim(Tokyo Tech.),  Shun-ichiro Ohmi(Tokyo Tech.),  

[Date]2018-10-18
[Paper #]SDM2018-59