Electronics-Silicon Devices and Materials(Date:2018/05/24)

Presentation
Fabrication of Cu-O Thin Films by Galvanostatic Electrochemical Deposition from Weakly Acidic Solutions

mansoureh keikhaei(NIT),  Masaya Ichimura(NIT),  

[Date]2018-05-24
[Paper #]ED2018-15,CPM2018-2,SDM2018-10
Temperature dependence of hydrogen-related donor in FZ-Silicon

Akira Kiyoi(Mitsubishi Electric Corp.),  Katsumi Nakamura(Mitsubishi Electric Corp.),  

[Date]2018-05-24
[Paper #]ED2018-19,CPM2018-6,SDM2018-14
Reduction of threading dislocation density in Ge layers on Si by introducing tunnel-shaped voids

Motoki Yako(Univ. of Tokyo),  Yasuhiko Ishikawa(Toyohashi Univ. of Tech.),  Kazumi Wada(Massachusetts Inst. Tech.),  

[Date]2018-05-24
[Paper #]ED2018-20,CPM2018-7,SDM2018-15
MEMS bio sensor using suspended graphene fabricated by low-pressure dry transfer technique

Shin Kidane(Toyohashi Univ. of Technol.),  Hayato Ishida(Toyohashi Univ. of Technol.),  Kazuaki Sawada(Toyohashi Univ. of Technol.),  Kazuhiro Takahashi(Toyohashi Univ. of Technol./JST-PRESTO),  

[Date]2018-05-24
[Paper #]ED2018-16,CPM2018-3,SDM2018-11
Fabrication and characterization of flexible organic thermoelectric materials

Naoki Kishi(NITech),  Satoshi Hibi(NITech),  Yuta Yoshida(NITech),  Keisuke Ono(NITech),  Yuma Sawada(NITech),  Hiroki Kunieda(NITech),  Yuya Kondo(NITech),  

[Date]2018-05-24
[Paper #]ED2018-14,CPM2018-1,SDM2018-9
The characterization of GaN homo-epitaxial layers grown on GaN substrates by using FT-IR

Fumimasa Horikiri(Sciocs),  Yoshinobu Narita(Sciocs),  Takehiro Yoshida(Sciocs),  

[Date]2018-05-24
[Paper #]ED2018-18,CPM2018-5,SDM2018-13
Growth of high quality InSb channel layer with InxGa1-xSb heteroepitaxial films on Si(111)

A. A. Mohammad Monzur-Ul-Akhir(University of Toyama),  Masayuki Mori(University of Toyama),  Koichi Maezawa(University of Toyama),  

[Date]2018-05-24
[Paper #]ED2018-17,CPM2018-4,SDM2018-12