Electronics-Silicon Devices and Materials(Date:2017/11/09)

Presentation
[Invited Talk] GaN MOS capacitance simulation considering deep traps

Koichi Fukuda(AIST),  Hidehiro Asai(AIST),  Junichi Hattori(AIST),  Mitsuaki Shimizu(AIST),  Tamotsu Hashizume(Hokkaido Univ.),  

[Date]2017-11-09
[Paper #]SDM2017-66
[Invited Talk] SISPAD 2017 Review (1)

Akira Hiroki(Kyoto Inst. Tech.),  

[Date]2017-11-09
[Paper #]SDM2017-62
Simple and efficient approach to improve hot carrier immunity of a p-LDMOSFET

Atsushi Sakai(REL),  Katsumi Eikyu(REL),  Fujii Hiroki(RSMC),  Takahiro Mori(RSMC),  Yutaka Akiyama(REL),  Yasuo Yamaguchi(REL),  

[Date]2017-11-09
[Paper #]SDM2017-63
[Invited Talk] Multri-Physics Simulation of GaN MOVPE Growth

Kenji Shiraishi(Nagoya Univ.),  Kazuki Sekiguchi(Nagoya Univ.),  Kenta Chokawa(Nagoya Univ.),  Hiroki Shirakawa(Nagoya Univ.),  Kento Kawakami(Nagoya Univ.),  Yoshihiro Yamamoto(Nagoya Univ.),  Masaaki Araidai(Nagoya Univ.),  Naoya Okamoto(Nagoya Univ.),  Katsumori Yoshimatsu(Nagoya Univ.),  Yoshihiro Kangawa(Kyushu Univ.),  Koichi Kakimoto(Kyushu Univ.),  

[Date]2017-11-09
[Paper #]SDM2017-61
[Invited Talk] Characterization and modeling of SiC power MOSFET

Takashi Sato(Kyoto Univ.),  Kazuki Oishi(Kyoto Univ.),  Masayuki Hiromoto(Kyoto Univ.),  Michihiro Shintani(NAIST),  

[Date]2017-11-09
[Paper #]SDM2017-65
[Invited Talk] Impurity Diffusion Modeling in SiC

Masashi Uematsu(Keio Univ.),  

[Date]2017-11-09
[Paper #]SDM2017-64
[Invited Talk] Fundamental Aspects of Semiconductor Device Modeling associated with Discrete Impurities

Nobuyuki Sano(Univ. Tsukuba),  

[Date]2017-11-10
[Paper #]SDM2017-68
[Invited Talk] An Accurate Metric to Control Time Step of Transient Device Simulation by Matrix Exponential Method

Shigetaka Kumashiro(KIT),  Tatsuya Kamei(KIT),  Akira Hiroki(KIT),  Kazutoshi Kobayashi(KIT),  

[Date]2017-11-10
[Paper #]SDM2017-70
[Invited Talk] A SPICE-compatible SG-MONOS model for 28nm embedded flash macro design considering the parasitic resistance caused by trapped charges

Risho Koh(Renesas electronics),  Mitsuru Miyamori(Renesas electronics),  Katsumi Tsuneno(Renesas electronics),  Tetsuya Muta(Renesas electronics),  Yoshiyuki Kawashima(Renesas electronics),  

[Date]2017-11-10
[Paper #]SDM2017-71
[Invited Talk] SISPAD 2017 Review (2)

Takashi Kurusu(TMC),  

[Date]2017-11-10
[Paper #]SDM2017-67
[Invited Talk] Quantum Transport Simulation of Ultra-Small Transistors

Nobuya Mori(Osaka Univ),  Gennady Mil'nikov(Osaka Univ),  Junichi Iwata(Univ of Tokyo),  Atsushi Oshiyama(Univ of Tokyo),  

[Date]2017-11-10
[Paper #]SDM2017-69