Electronics-Silicon Devices and Materials(Date:2017/10/25)

Presentation
Nanoscale conformal doping technology by spin on diffusion source

Tetsuro Kinoshita(TOK),  Shunichi Mashita(TOK),  Takuya Ohashi(TOK),  Yoshihiro Sawada(TOK),  Yohei Kinoshita(TOK),  Satoshi Fujimura(TOK),  

[Date]2017-10-25
[Paper #]SDM2017-53
[Invited Talk] A Study on the Device Characteristics of Pentacene-based OFET with HfO2 Gate Insulator

Yasutaka Maeda(Tokyo Tech.),  Yeyuan Liu(Tokyo Tech.),  Mizuha Hiroki(Tokyo Tech.),  Shun-ichiro Ohmi(Tokyo Tech.),  

[Date]2017-10-25
[Paper #]SDM2017-54
[Invited Talk] Zero-step-height planarization: Controlling PMD volume before CMP

Tomoyasu Kakegawa(SanDisk),  Takuya Futase(SanDisk),  

[Date]2017-10-25
[Paper #]SDM2017-50
Si surface atomically flattening process with chemical oxide passivation for Ar/H2 annealing and Hf-based MONOS device application

Sohya Kudoh(Tokyo Tech.),  Shun-ichiro Ohmi(Tokyo Tech.),  

[Date]2017-10-25
[Paper #]SDM2017-52
Experimental Investigation of Localized Stress Induced Leakage Current Distribution and its Decrease by Atomically Flattening Process

Hyeonwoo Park(Tohoku Univ),  Rihito Kuroda(Tohoku Univ),  Tetsuya Goto(Tohoku Univ),  Tomoyuki Suwa(Tohoku Univ),  Akinobu Teramoto(Tohoku Univ),  Daiki Kimoto(Tohoku Univ),  Shigetoshi Sugawa(Tohoku Univ),  

[Date]2017-10-25
[Paper #]SDM2017-51
Pinning Voltage Control of CMOS Image Sensor by measuring sheet resistance at micro test structure in scribe line

Yotaro Goto(RSMC),  Tadasihi Yamaguchi(REL),  Masazumi Matsuura(REL),  Koji Iizuka(RSMC),  

[Date]2017-10-26
[Paper #]SDM2017-59
[Invited Lecture] High-temperature stable Physical Unclonable Functions with error-free readout scheme based on 28nm SG-MONOS flash memory for security applications

Takahiro Shimoi(Renesas Electronics),  Tomoya Saito(Renesas Electronics),  Hirokazu Nagase(Renesas Electronics),  Masayuki Izuna(Renesas Electronics),  Akihiko Kanda(Renesas Electronics),  Takashi Ito(Renesas Electronics),  Takashi Kono(Renesas Electronics),  

[Date]2017-10-26
[Paper #]SDM2017-58
Effect of ZrO2 seed layer on ferroelectricity of HfxZr1-xO2 thin film

Takashi Onaya(Meiji Univ./NIMS),  Toshihide Nabatame(NIMS/JST),  Naomi Sawamoto(Meiji Univ.),  Akihiko Ohi(NIMS),  Naoki Ikeda(NIMS),  Toyohiro Chikyow(NIMS),  Atsushi Ogura(Meiji Univ.),  

[Date]2017-10-26
[Paper #]SDM2017-57
A High Sensitivity Realtime Compact Gas Concentration Sensor using UV absorption spectroscopy and Charge Amplifier Circuit

Hidekazu Ishii(Tohoku Univ.),  Masaaki Nagase(Fujikin Inc.),  Nobukazu Ikeda(Fujikin Inc.),  Yoshinobu Shiba(Tohoku Univ.),  Yasuyuki Shirai(Tohoku Univ.),  Rihito Kuroda(Tohoku Univ.),  Shigetoshi Sugawa(Tohoku Univ.),  

[Date]2017-10-26
[Paper #]SDM2017-56
Analysis of Random Telegraph Noise Behaviors toward Changes of Source Follower Transistor Operation Conditions using High Accuracy Array Test Circuit

Shinya Ichino(Tohoku Univ.),  Takezo Mawaki(Tohoku Univ.),  Akinobu Teramoto(Tohoku Univ.),  Rihito Kuroda(Tohoku Univ.),  Shunichi Wakashima(Tohoku Univ.),  Shigetoshi Sugawa(Tohoku Univ.),  

[Date]2017-10-26
[Paper #]SDM2017-60
[Invited Talk] Utilization of Big Data for Innovation in Semiconductor Memory Manufacturing

Hiroshi Akahori(Toshiba Memory),  Kouta Nakata(Toshiba),  Ryohei Orihara(Toshiba),  Yoshiaki Mizuoka(Toshiba),  Kentaro Takagi(Toshiba),  Kenichi Kadota(Toshiba Memory),  Takaharu Nishimura(Toshiba Memory),  Yukako Tanaka(Toshiba Memory),  Hidetaka Eguchi(Toshiba Memory),  

[Date]2017-10-26
[Paper #]SDM2017-55