Electronics-Silicon Devices and Materials(Date:2017/06/20)

Presentation
Direct Observation of Chemical Structure and Electrical Dipole at High-k/SiO2 Interface Using by XPS Measurements

Nobuyuki Fujimura(Nagoya Univ.),  Akio Ohta(Nagoya Univ.),  Mitsuhisa Ikeda(Nagoya Univ.),  Katsunori Makihara(Nagoya Univ.),  Seiichi Miyazaki(Nagoya Univ.),  

[Date]2017-06-20
[Paper #]SDM2017-25
[Invited Lecture] Scintillators and Ga2O3 Semiconductors

Go Okada(NAIST),  Yuki Usui(NAIST),  Naoki Kawano(NAIST),  Noriaki Kawaguchi(NAIST),  Takayuki Yanagida(NAIST),  

[Date]2017-06-20
[Paper #]SDM2017-21
[Invited Lecture] Studies on semiconducting gas sensors with WO3 nanoparticles for skin-emitted acetone detection

Yuki Yamada(NTT DOCOMO),  Satoshi Hiyama(NTT DOCOMO),  Hitoshi Tabata(Univ. of Tokyo),  

[Date]2017-06-20
[Paper #]SDM2017-23
[Invited Lecture] Development of Quantum Imaging Detector using SOI Technology

Yasuo Arai(KEK),  

[Date]2017-06-20
[Paper #]SDM2017-22
[Invited Lecture] Sensing technologies using nitrogen-vacancy centers in diamond

Takayuki Iwasaki(Tokyo Inst. of Tech.),  Mutsuko Hatano(Tokyo Inst. of Tech.),  

[Date]2017-06-20
[Paper #]SDM2017-24
Low-Carrier-Density Sputtered-MoS2 Film by Vapor-Phase- Sulfurization

Kentaro Matsuura(Tokyo Tech),  Takumi Ohashi(Tokyo Tech),  Iriya Muneta(Tokyo Tech),  Seiya Ishihara(Meiji Univ.),  Kuniyuki Kakushima(Tokyo Tech),  Kazuo Tsutsui(Tokyo Tech),  Atsushi Ogura(Meiji Univ.),  Hitoshi Wakabayashi(Tokyo Tech),  

[Date]2017-06-20
[Paper #]
Heavily-doped SOI Substrate and Transfer Printing for Fabrication of TMDC FETs

Takamasa Kawanago(Tokyo Inst. of Tech.),  Ryo Ikoma(Tokyo Inst. of Tech.),  Hiroyuki Takagi(Tokyo Inst. of Tech.),  Shunri Oda(Tokyo Inst. of Tech.),  

[Date]2017-06-20
[Paper #]SDM2017-28
Capacitance Analyses of p-ch GaN MOS Structure on Polarization ― Junction Substrate

Rumi Takayama(Tokyo Inst. of Tech.),  Takuya Hoshii(Tokyo Inst. of Tech.),  Akira Nakajima(AIST),  Shinichi Nishizawa(Kyushu Univ.),  Hiromichi Ohashi(Tokyo Inst. of Tech.),  Kuniyuki Kakushima(Tokyo Inst. of Tech.),  Hitoshi Wakabayashi(Tokyo Inst. of Tech.),  Kazuo Tsutsui(Tokyo Inst. of Tech.),  

[Date]2017-06-20
[Paper #]SDM2017-27
Resistive Switching Properties of Si Oxide by Constant Voltage and Constant Current Application

Akio Ohta(Nagoya Univ.),  Yusuke Kato(Nagoya Univ.),  Mitsuhisa Ikeda(Nagoya Univ.),  Katsunori Makihara(Nagoya Univ.),  Seiichi Miyazaki(Nagoya Univ.),  

[Date]2017-06-20
[Paper #]SDM2017-26
Characterization of defects in Ge1-xSnx gate stack structure

Yuichi Kaneda(Nagoya Univ.),  Shinnichi ike(Nagoya Univ.),  Masayuki Kanematsu(Nagoya Univ.),  Mitsuo Sakashita(Nagoya Univ.),  Wakana Takeuchi(Nagoya Univ.),  Osamu Nakatsuka(Nagoya Univ.),  Shigeaki Zaima(Nagoya Univ.),  

[Date]2017-06-20
[Paper #]SDM2017-29
Formation of Ultrathin Crystalline Structure of Group-IV Elements on Epitaxial Ag(111) Surface

Koichi Ito(Nagoya Univ.),  Akio Ohta(Nagoya Univ.),  Masashi Kurosawa(Nagoya Univ.),  Masaaki Araidai(Nagoya Univ.),  Mitsuhisa Ikeda(Nagoya Univ.),  Katsunori Makihara(Nagoya Univ.),  Seiichi Miyazaki(Nagoya Univ.),  

[Date]2017-06-20
[Paper #]SDM2017-30