Electronics-Silicon Devices and Materials(Date:2016/10/26)

Presentation
Formation technology of Flat Surface after Selective Epitaxial Growth on Ion-Implanted (100) Oriented Thin SOI Wafers

Kiichi Furukawa(Tohoku Univ.),  Akinobu Teramoto(Tohoku Univ.),  Rihito Kuroda(Tohoku Univ.),  Tomoyuki Suwa(Tohoku Univ.),  Keiichi Hashimoto(Tohoku Univ.),  Shigetoshi Sugawa(Tohoku Univ.),  Daisuke Suzuki(Tokyo Electron Tohoku),  Yoichiro Chiba(Tokyo Electron Tohoku),  Katsutoshi Ishii(Tokyo Electron Tohoku),  Akira Shimizu(Tokyo Electron Tohoku),  Kazuhide Hasebe(Tokyo Electron Tohoku),  

[Date]2016-10-26
[Paper #]SDM2016-70
[Invited Talk] Back-Bias Control Technique for Suppression of Die-to-Die Delay Variability of SOTB CMOS Circuits at Ultralow-Voltage (0.4 V) Operation

Hideki Makiyama(Renesas Electronics Corp.),  Yoshiki Yamamoto(Renesas Electronics Corp.),  Takumi Hasegawa(Renesas Electronics Corp.),  Shinobu Okanishi(Renesas Electronics Corp.),  Keiichi Maekawa(Renesas Electronics Corp.),  Hiroki Shinkawata(Renesas Electronics Corp.),  Shiro Kamohara(Renesas Electronics Corp.),  Yasuo Yamaguchi(Renesas Electronics Corp.),  Nobuyuki Sugii(Hitach),  Koichiro Ishibashi(The Univ. of Electro-Communications),  Tomoko Mizutani(The Univ. of Tokyo),  Toshiro Hiramoto(The Univ. of Tokyo),  

[Date]2016-10-26
[Paper #]SDM2016-71
[Invited Talk] Ultralow-Voltage Operation of Silicon-on-Thin-BOX (SOTB) 2Mbit SRAM Down to 0.37 V Utilizing Adaptive Back Bias

Yoshiki Yamamoto(Renesas),  Hideki Makiyama(Renesas),  Takumi Hasegawa(Renesas),  Shinobu Okanishi(Renesas),  Keiichi Maekawa(Renesas),  Shinkawata Hiroki(Renesas),  Shiro Kamohara(Renesas),  Yasuo Yamaguchi(Renesas),  Nobuyuki Sugii(Hitachi),  Tomoko Mizutani(UT),  Toshiro Hiramoro(UT),  

[Date]2016-10-26
[Paper #]SDM2016-72
[Invited Talk] Controlling Metallic Contamination in Advanced ULSI Processing

Koichiro Saga(Sony),  

[Date]2016-10-26
[Paper #]SDM2016-69
[Invited Talk] Novel Pixel Structure with Stacked Deep Photodiode to Achieve High NIR Sensitivity and High MTF

Hiroki Takahashi(TPSCo),  Hiroshi Tanaka(TPSCo),  Masahiro Oda(TPSCo),  Mitsuyoshi Ando(TPSCo),  Naoto Niisoe(TPSCo),  Shinichi Kawai(PSCS),  Takuya Asano(PSCS),  Mitsugu Yoshita(PSCS),  Tohru Yamada(PSCS),  

[Date]2016-10-27
[Paper #]SDM2016-77
Effect of Si surface flatness on electrical characteristics of Hf-based MONOS structure

Sohya Kudoh(Tokyo Tech),  Shun-ichiro Ohmi(Tokyo Tech),  

[Date]2016-10-27
[Paper #]SDM2016-76
[Invited Talk] Low-Noise Imaging Techniques for Scientific CMOS Image Sensors

Min-Woong Seo(Shizuoka Univ.),  Shoji Kawahito(Shizuoka Univ.),  

[Date]2016-10-27
[Paper #]SDM2016-78
Effects of the oxidizing species on the interface of Al2O3 film by atomic layer deposition

Masaya Saito(Tohoku univ.),  Tomoyuki Suwa(Tohoku univ.),  Akinobu Teramoto(Tohoku univ.),  Rihito Kuroda(Tohoku univ.),  Yasumasa Koda(Tohoku univ.),  Hisaya Sugita(Tohoku univ.),  Hidekazu Ishii(Tohoku univ.),  Yoshinobu Shiba(Tohoku univ.),  Yasuyuki Shirai(Tohoku univ.),  Shigetoshi Sugawa(Tohoku univ.),  Marie Hayashi(CANON ANELVA),  Junichi Tsuchimoto(CANON ANELVA),  

[Date]2016-10-27
[Paper #]SDM2016-73
A Study on Pentacene Film Formation on SiO2 with Wet Process for Bottom-Contact Type OFETs

Yasutaka Maeda(Tokyo Tech.),  Mizuha Hiroki(Tokyo Tech.),  Shun-ichiro Ohmi(Tokyo Tech.),  

[Date]2016-10-27
[Paper #]SDM2016-74
Behavior of Random Telegraph Noise toward Bias Voltage Changing

Takezo Mawaki(Tohoku Univ.),  Akinobu Teramoto(Tohoku Univ.),  Rihito Kuroda(Tohoku Univ.),  Shinya Ichino(Tohoku Univ.),  Tetsuya Goto(Tohoku Univ.),  Tomoyuki Suwa(Tohoku Univ.),  Shigetoshi Sugawa(Tohoku Univ.),  

[Date]2016-10-27
[Paper #]SDM2016-75