Electronics-Silicon Devices and Materials(Date:2016/06/29)

Presentation
[Invited Lecture] Application of layered chalcogenide materials to field effect transistor devices

Keiji Ueno(Saitama Univ.),  

[Date]2016-06-29
[Paper #]SDM2016-43
[Invited Lecture] Growth and characterization of atomically-thin transition metal dichalcogenides

Yasumitsu Miyata(Tokyo Metropolitan Univ.),  

[Date]2016-06-29
[Paper #]SDM2016-47
[Invited Lecture] Effects of top TiN deposition and annealing process on electrical and physical properties of ferroelectric HfSiO MIM capacitor

Yuuichi Kamimuta(Toshiba),  Shosuke Fujii(Toshiba),  Riichiro Takaishi(Toshiba),  Tsunehiro Ino(Toshiba),  Yasushi Nakasaki(Toshiba),  Masumi Saitoh(Toshiba),  Masato Koyama(Toshiba),  

[Date]2016-06-29
[Paper #]SDM2016-32
Proposal of vertical stacked type Fe-FET NAND logic and its application to system LSI

Shigeyoshi Watanabe(Shonan Inst. Tech.),  Tomohiro Yokota(Data Techno),  

[Date]2016-06-29
[Paper #]SDM2016-36
[Invited Lecture] Structural-controlled synthesis of atomically thin layered materials and its plasma functionalization

Toshiaki Kato(Tohoku Univ.),  Toshiro Kaneko(Tohoku Univ.),  

[Date]2016-06-29
[Paper #]SDM2016-44
Effect of Al2O3layer on leakage current properties for DRAM capacitor with ZrO2/Al2O3/ZrO2multilayer

Takashi Onaya(Meiji Univ./NIMS),  Toshihide Nabatame(NIMS/JST-CREST),  Tomomi Sawada(NIMS/JST-CREST),  Kazunori Kurishima(Meiji Univ./NIMS),  Naomi Sawamoto(Meiji Univ.),  Akihiko Ohi(NIMS),  Toyohiro Chikyo(NIMS),  Atsushi Ogura(Meiji Univ.),  

[Date]2016-06-29
[Paper #]SDM2016-37
[Invited Lecture] Self-assembled monolayer-based gate dielectrics for low voltage MoS2 FET

Takamasa Kawanago(Tokyo Tech.),  Shunri Oda(Tokyo Tech.),  

[Date]2016-06-29
[Paper #]SDM2016-45
[Invited Lecture] Preparation of orientation-controlled HfO2 –based films and their properties

Hiroshi Funakub(Tokyo Tech.),  Takao Shimizu(Tokyo Tech.),  Kiriha Katayama(Tokyo Tech.),  Takanori Mimura(Tokyo Tech.),  

[Date]2016-06-29
[Paper #]SDM2016-33
Effects of ultraviolet irradiation on the band offset of Tantalum nanosheets/SiO2/Si interfaces

Shuhei Hayami(Kyoto Univ.),  Satoshi Toyoda(Kyoto Univ.),  Katsutoshi Fukuda(Kyoto Univ.),  Hidetaka Sugaya(Panasonic),  Masahito Morita(Kyoto Univ.),  Akiyoshi Nakata(Kyoto Univ.),  Yoshiharu Uchimoto(Kyoto Univ.),  Eiichiro Matsubara(Kyoto Univ.),  

[Date]2016-06-29
[Paper #]SDM2016-42
XPS Study on Potential Change and Electrical Dipole at SiO2/Semiconductor Interface

Nobuyuki Fujimura(Nagoya Univ.),  Akio Ohta(Nagoya Univ.),  Hiromasa Watanabe(Nagoya Univ.),  Katsunori Makihara(Nagoya Univ.),  Seiichi Miyazaki(Nagoya Univ.),  

[Date]2016-06-29
[Paper #]SDM2016-40
Characterization of electrically active defects in epitaxial GeSn layer grown on Ge substrate

Yuichi Kaneda(Nagoya Univ.),  Masayuki Kanematsu(Nagoya Univ.),  Mitsuo Sakashita(Nagoya Univ.),  Wakana Takeuchi(Nagoya Univ.),  Osamu Nakatsuka(Nagoya Univ.),  Shigeaki Zaima(Nagoya Univ.),  

[Date]2016-06-29
[Paper #]SDM2016-39
Low Temperature Formation of Thin SiO2 Film by Using Remote Oxygen Plasma Enhanced CVD

NguyenXuan Truyen(Nagoya Univ.),  Nobuyuki Fujimura(Nagoya Univ.),  Daichi Takeuchi(Nagoya Univ.),  Akio Ohta(Nagoya Univ.),  Katsunori Makihara(Nagoya Univ.),  Mitsuhisa Ikeda(Nagoya Univ.),  Seiichi Miyazaki(Nagoya Univ.),  

[Date]2016-06-29
[Paper #]SDM2016-41
MoS2 film formation by RF magnetron sputtering for thin film transistors

Takumi Ohashi(Tokyo Tech),  Kentaro Matsuura(Tokyo Tech),  Seiya Ishihara(Meiji Univ.),  Yusuke Hibino(Meiji Univ.),  Naomi Sawamoto(Meiji Univ.),  Kuniyuki Kakushima(Tokyo Tech),  Kazuo Tsutsui(Tokyo Tech),  Atsushi Ogura(Meiji Univ.),  Hitoshi Wakabayashi(Tokyo Tech),  

[Date]2016-06-29
[Paper #]SDM2016-46
Fabrication of ferroelectric nanowire capacitors

Hironori Fujisawa(Univ. Hyogo),  Masaru Shimizu(Univ. Hyogo),  Seiji Nakashima(Univ. Hyogo),  

[Date]2016-06-29
[Paper #]SDM2016-35
A resistive switching device based on breakdown and local anodic oxidation

Kuniyuki Kakushima(Tokyo Tech.),  Hitoshi Wakabayashi(Tokyo Tech.),  Kazuo Tsutsui(Tokyo Tech.),  Hiroshi Iwai(Tokyo Tech.),  

[Date]2016-06-29
[Paper #]SDM2016-38
[Invited Lecture] Design of SOI-FETs for Steep Slope Switching using Negative Capacitance in Ferroelectric Gate Insulators

Hiroyuki Ota(AIST),  Shinji Migita(AIST),  Junichi Hattori(AIST),  Koichi Fukuda(AIST),  Akira Toriumi(The Univ. of Tokyo),  

[Date]2016-06-29
[Paper #]SDM2016-34