Electronics-Silicon Devices and Materials(Date:2015/06/19)

Presentation
[Invited Lecture] Bandgap opening and electrode contact resistances in bilayer graphene field-effect transistors

Ryo Nouchi(Osaka Pref. Univ.),  

[Date]2015-06-19
[Paper #]SDM2015-54
[Invited Lecture] Interface states characterization of Al2O3/AlGaN/GaN structures

Zenji Yatabe(Hokkaido Univ.),  Tamotsu Hashizume(Hokkaido Univ.),  

[Date]2015-06-19
[Paper #]SDM2015-38
[Invited Lecture] Al2O3/Ga2O3 interface structure and its surface orientation dependence

Takafumi Kamimura(NICT),  Daivasigamani Krishnamurthy(NICT),  Akito Kuramata(Tamura Corp.),  Shigenobu Yamakoshi(Tamura Corp.),  Masataka Higashiwaki(NICT),  

[Date]2015-06-19
[Paper #]SDM2015-40
[Invited Lecture] Characterization of traps in MOCVD n-GaN by capacitance transient spectroscopy

Yutaka Tokuda(Aich Inst. of Technol.),  

[Date]2015-06-19
[Paper #]SDM2015-39
[Invited Lecture] Effect of oxynitridation annealing on defect properties at SiO2/SiC MOS interface

Wakana Takeuchi(Nagoya Univ.),  Kensaku Yamamoto(DENSO CORP.),  Mitsuo Sakashita(Nagoya Univ.),  Takashi Kanemura(DENSO CORP.),  Osamu Nakatsuka(Nagoya Univ.),  Shigeaki Zaima(Nagoya Univ.),  

[Date]2015-06-19
[Paper #]SDM2015-43
Understanding of Schottky Barrier Height Modulation at NiGe/Ge Interfaces for Metal S/D Ge CMOS Technology

Hiroshi Oka(Osaka Univ.),  Yuya Minoura(Osaka Univ.),  Ryohei Asahara(Osaka Univ.),  Takuji Hosoi(Osaka Univ.),  Takayoshi Shimura(Osaka Univ.),  Heiji Watanabe(Osaka Univ.),  

[Date]2015-06-19
[Paper #]SDM2015-48
[Invited Lecture] Electrostatically-controllable polarity of transistors on atomically-thin films

Shu Nakaharai(NIMS),  Tomohiko Iijima(AIST),  Shinichi Ogawa(AIST),  Katsunori Yagi(AIST),  Naoki Harada(AIST),  Kenjiro Hayashi(AIST),  Daiyu Kondo(AIST),  Makoto Takahashi(AIST),  Songlin Li(NIMS),  Mahito Yamamoto(NIMS),  Yen-Fu Lin(NIMS),  Keiji Ueno(Saitama Univ.),  Kazuhito Tsukagoshi(NIMS),  Shintaro Sato(AIST),  Naoki Yokoyama(AIST),  

[Date]2015-06-19
[Paper #]SDM2015-55
[Invited Lecture] Characteristics of nitrogen incorporation at SiC/SiO2 interface on Si-face and C-face 4H-SiC

Daisuke Mori(Fuji Electric),  Kei Inoue(Fuji Electric),  Hideaki Teranishi(Fuji Electric),  Takayuki Hirose(Fuji Electric),  Aki Takigawa(Fuji Electric),  

[Date]2015-06-19
[Paper #]SDM2015-42
Improvements of electrical properties of wafer-bonded GeOI substrates with ultrathin Al2O3/SiO2 hybrid BOX layers by post-annealing

Keisuke Yoshida(Osaka Univ.),  Shotaro Takeuchi(Osaka Univ.),  Yoshiaki Nakamura(Osaka Univ.),  Akira Sakai(Osaka Univ.),  

[Date]2015-06-19
[Paper #]SDM2015-53
Electrical properties of GIZO TFT with ultrathin Al2O3 insulators by PE-ALD method

Kazunori Kurishima(Meiji Univ./NIMS),  Toshihide Nabatame(NIMS),  Kazuhito Tsukagoshi(NIMS),  Akihiko Ohi(NIMS),  Toyohiro Chikyow(NIMS),  Atsushi Ogura(Meiji Univ.),  

[Date]2015-06-19
[Paper #]SDM2015-51
[Invited Lecture] Investigation of SiC MOSFETs with 3C/4H Different Poly-Type Junctions

Muentaka Noguchi(Mitsubishi Electric),  Toshiaki Iwamatsu(Mitsubishi Electric),  Naruhisa Miura(Mitsubishi Electric),  Shuhei Nakata(Mitsubishi Electric),  Satoshi Yamakawa(Mitsubishi Electric),  

[Date]2015-06-19
[Paper #]SDM2015-41
Fully compatible resistive random access memory with amorphous InGaZnO based thin film transistor fabrication process

Keisuke Kado(NAIST),  Mutsunori Uenuma(NAIST),  Kyouhei Nabesaka(NAIST),  Kriti Sharma(NAIST),  Haruka Yamazaki(NAIST),  Satoshi Urakawa(NAIST),  Mami Fujii(NAIST),  Yasuaki Ishikawa(NAIST),  Yukiharu Uraoka(NAIST),  

[Date]2015-06-19
[Paper #]SDM2015-52
[Invited Lecture] Fabrication and Characterization of MoS2 MOSFET with High-k/Metal Gate

Takahiro Mori(AIST),  Naruki Ninomiya(YNU),  Noriyuki Uchida(AIST),  Toshitaka Kubo(AIST),  Eiichiro Watanabe(NIMS),  Daiju Tsuya(NIMS),  Satoshi Moriyama(NIMS),  Masatoshi Tanaka(YNU),  Atsushi Ando(AIST),  

[Date]2015-06-19
[Paper #]SDM2015-56
First-Principles Study on Hydrogen Annealing Effect in Si/SiO2 Interface by Thermal Oxidation

Shingo Kawachi(Nagoya Univ.),  Hiroki Shirakawa(Nagoya Univ.),  Masaaki Araidai(Nagoya Univ.),  Hiroyuki Kageshima(Shimane Univ.),  Tetsuo Endoh(Tohoku Univ.),  Kenji Shiraishi(Nagoya Univ.),  

[Date]2015-06-19
[Paper #]SDM2015-45
Effect of annealing on defects in Ge1-xSnx epitaxial layers

Takanori Asano(Nagoya Univ.),  Shigehisa Shibayama(Nagoya Univ.),  Wakana Takeuchi(Nagoya Univ.),  Mitsuo Sakashita(Nagoya Univ.),  Osamu Nakatsuka(Nagoya Univ.),  Shigeaki Zaima(Nagoya Univ.),  

[Date]2015-06-19
[Paper #]SDM2015-50
Photoemission Study on Chemical Bonding Features and Electronic Defect States of Thermally grown SiO2/4H-SiC Structure

Hiromasa Watanabe(Nagoya Univ),  Akio Ohta(Nagoya Univ),  Katsunori Makihara(Nagoya Univ),  Seiichi Miyazaki(Nagoya Univ),  

[Date]2015-06-19
[Paper #]SDM2015-44
Impact of Embedded Ti Nanodots on Resistive Switching Characteristics of Si-rich Oxides

Yuusuke Kato(Nagoya Univ.),  Takashi Arai(Nagoya Univ.),  Akio Ohta(Nagoya Univ.),  Katsunori Makihara(Nagoya Univ.),  Seiichi Miyazaki(Nagoya Univ.),  

[Date]2015-06-19
[Paper #]SDM2015-46
Fabrication of PtGe/Ge contacts with low hole barrier and its application to metal source/drain Ge p-channel MOSFETs

Yuta Nagatomi(Kyushu Univ.),  Shintaro Tanaka(Kyushu Univ.),  Yuichi Nagaoka(Kyushu Univ.),  Keisuke Yamamoto(Kyushu Univ.),  Dong Wang(Kyushu Univ.),  Hiroshi Nakashima(Kyushu Univ.),  

[Date]2015-06-19
[Paper #]SDM2015-47
Control of electrical conduction property at metal/Ge interface by introducing ultra-high Sn content SnxGe1-x/Ge interlayer

Akihiro Suzuki(Nagoya Univ.),  Shigehisa Shibayama(Nagoya Univ.),  Mitsuo Sakashita(Nagoya Univ.),  Wakana Takeuchi(Nagoya Univ.),  Osamu Nakatsuka(Nagoya Univ.),  Shigeaki Zaima(Nagoya Univ.),  

[Date]2015-06-19
[Paper #]SDM2015-49