Electronics-Silicon Devices and Materials(Date:2014/10/30)

Presentation
表紙

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[Date]2014/10/30
[Paper #]
目次

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[Date]2014/10/30
[Paper #]
An Analytical Modeling For Asymmetric Double Gate Tunnel Field Effect Transistor

Honfei Lv,  Shingo Sato,  Yasuhisa Omura,  Abhijit MALLIK,  

[Date]2014/10/30
[Paper #]SDM2014-96
Physics-based Analytical Model for Gate-on-Germanium Source (GoGeS) TFET

Yasuhisa OMURA,  Shingo SATO,  Abhijit MALLIK,  

[Date]2014/10/30
[Paper #]SDM2014-97
Three-dimensional calculation of ion implantation to SiC substrate

Minoru OKAMOTO,  Mamoru SHIMIZU,  Yasuyuki OKURA,  Ken YAMAGUCHI,  Hideaki KOIKE,  

[Date]2014/10/30
[Paper #]SDM2014-98
Spice Model of SiC Power MOSFET (DioMOS) : Modeling Methodology for Reverse Current-voltage Characteristics of SiC

Tetsuya Yamamoto,  Tetsuro Sawai,  Nobuyuki Horikawa,  Yoshihiko Kanzawa,  Kenji Mizutani,  Nobuyuki Otsuka,  Eiji Fujii,  

[Date]2014/10/30
[Paper #]SDM2014-99
Device Simulation : More than 30 years in Toshiba's TCAD

Naoyuki SHIGYO,  

[Date]2014/10/30
[Paper #]SDM2014-100
Recent Progress In Electronic Device Materials Design Based On Computational Physics

Hiroyuki KAGESHIMA,  

[Date]2014/10/30
[Paper #]SDM2014-101
Modeling and Simulation of Charge-Trapping Memory and Reliability Issues

Takamitsu ISHIHARA,  Naoki YASUDA,  Shosuke FUJII,  

[Date]2014/10/30
[Paper #]SDM2014-102
SISPAD 2014 Review

Kenichiro SONODA,  

[Date]2014/10/30
[Paper #]SDM2014-103
Stress and Doping Impact on Intrinsic Point Defect Behavior in Growing Single Crystal Silicon

Koji SUEOKA,  Eiji KAMIYAMA,  Kozo NAKAMURA,  Jan VANHELLEMONT,  

[Date]2014/10/30
[Paper #]SDM2014-104
Quasi-Ballistic Transport Parameters in Si Double-Gate MOSFETs Extracted Using Monte Caro Method

Hideaki TSUCHIYA,  Ryoma ISHIDA,  Yoshinari KAMAKURA,  Nobuya MORI,  Shigeyasu UNO,  Matsuto OGAWA,  

[Date]2014/10/30
[Paper #]SDM2014-105
Statistical analysis of random telegraph noise and its consequence for modeling of oxide traps

Hiroshi MIKI,  

[Date]2014/10/30
[Paper #]SDM2014-106
Interface Engineering for High Mobility Ge MOSFETs : Surface Orientation and Scattering Mechanism

ChoongHyun Lee,  Tomonori Nishimura,  Akira Toriumi,  

[Date]2014/10/30
[Paper #]SDM2014-107
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[Date]2014/10/30
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Reprographic Reproduction outside Japan

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[Date]2014/10/30
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奥付

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[Date]2014/10/30
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裏表紙

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[Date]2014/10/30
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