Electronics-Silicon Devices and Materials(Date:2014/10/09)

Presentation
表紙

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[Date]2014/10/9
[Paper #]
目次

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[Date]2014/10/9
[Paper #]
Performance improvement and present status of IGBT

Tomohide TERASHIMA,  

[Date]2014/10/9
[Paper #]SDM2014-84
Introduction of Atomically Flattening of Silicon Surface in Shallow Trench Isolation Process Technology

Tetsuya GOTO,  Rihito KURODA,  Naoya AKAGAWA,  Tomoyuki SUWA,  Akinobu TERAMOTO,  Xiang LI,  Toshiki OBARA,  Daiki KIMOTO,  Shigetoshi SUGAWA,  Tadahiro OHMI,  Yuki KUMAGAI,  Yutaka KAMATA,  Katsuhiko SHIBUSAWA,  

[Date]2014/10/9
[Paper #]SDM2014-85
A study on Si surface flattening process utilizing atmospheric annealing system

Sohya KUDOH,  Shun-ichiro OHMI,  

[Date]2014/10/9
[Paper #]SDM2014-86
Electrical characteristics of as-deposited HfN gate insulator formed by ECR plasma sputtering

Nithi ATTHI,  Shun-ichiro OHMI,  

[Date]2014/10/9
[Paper #]SDM2014-87
Ion Implantation Technology for Image Sensing Devices

Yoji KAWASAKI,  Genshu FUSE,  Makoto SANO,  Emi OOGA,  Masazumi KOIKE,  Kazuhiro WATANABE,  Michiro SUGITANI,  

[Date]2014/10/9
[Paper #]SDM2014-88
Study on compositional transition layers at Si_3N_4/Si interface formed by radical nitridation

Tomoyuki SUWA,  Akinobu TERAMOTO,  Shigetoshi SUGAWA,  Tadahiro OHMI,  

[Date]2014/10/9
[Paper #]SDM2014-89
Initial stage of oxidation on 4H-SiC using angle-resolved X-ray photoelectron spectroscopy

Tomoya SASAGO,  Shunta YAMAHORI,  Hiroshi NOHIRA,  

[Date]2014/10/9
[Paper #]SDM2014-90
Epitaxial Growth of Ge and Ge_<1-x>Sn_x Films by MOCVD

Kohei Suda,  Seiya Ishihara,  Takahiro Kijima,  Naomi Sawamoto,  Hideaki Machida,  Masato Ishikawa,  Hiroshi Sudoh,  Yoshio Ohshita,  Atsushi Ogura,  

[Date]2014/10/9
[Paper #]SDM2014-91
Analysis of Multi-Trap Random Telegraph Noise Using Charging History Effects in Nano-Scaled MOSFETs(Invited Talk)

Toshiaki TSUCHIYA,  

[Date]2014/10/9
[Paper #]SDM2014-92
Analysis of trap density causing random telegraph noise in MOSFETs

Toshiki OBARA,  Akinobu TERAMOTO,  Rihito Kuroda,  Akihiro YONEZAWA,  Tetsuya GOTO,  Tomoyuki SUWA,  Shigetoshi SUGAWA,  Tadahiro OHMI,  

[Date]2014/10/9
[Paper #]SDM2014-93
Back-Bias Control Technique for Suppression of Die-to-Die Delay Variability of SOTB MOS Circuits at Ultralow-Voltage (0.4 V) Operation

H. Makiyama,  Y. Yamamoto,  H. Oda,  S. Kamohara,  N. Sugii,  Y. Yamaguchi,  K. Ishibashi,  T. Mizutani,  T. Hiramoto,  

[Date]2014/10/9
[Paper #]SDM2014-94
Design method of stacked type NAND MRAM

Shigeyoshi Watanabe,  Shoto Tamai,  

[Date]2014/10/9
[Paper #]SDM2014-95
複写される方へ

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[Date]2014/10/9
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Reprographic Reproduction outside Japan

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[Date]2014/10/9
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奥付

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[Date]2014/10/9
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裏表紙

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[Date]2014/10/9
[Paper #]