Electronics-Silicon Devices and Materials(Date:2014/06/12)

Presentation
表紙

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[Date]2014/6/12
[Paper #]
目次

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[Date]2014/6/12
[Paper #]
Process Design of High-k/Ge Gate Stack for Improving Thermal Stability and Interface Properties in Sub-1-nm Regime

Ryohei ASAHARA,  Takuji HOSOI,  Takayoshi SHIMURA,  Heiji WATANABE,  

[Date]2014/6/12
[Paper #]SDM2014-43
Investigation of Al-PMA Effect on Al_2O_3/GeO_x/Ge Gate Stack

Yuta NAGATOMI,  Yuichi NAGAOKA,  Keisuke YAMAMOTO,  Dong WANG,  Hiroshi NAKASHIMA,  

[Date]2014/6/12
[Paper #]SDM2014-44
Alleviation of Fermi level pinning of Sn/Ge contact

Akihiro Suzuki,  Shunsuke Asaba,  Jun Yokoi,  Masashi Kurosawa,  Kimihiko Kato,  Mitsuo Sakashita,  Noriyuki Taoka,  Osamu Nakatsuka,  Shigeaki Zaima,  

[Date]2014/6/12
[Paper #]SDM2014-45
Stability of vacancy defect around metal/Ge interfaces : First-principles Study

Shogo SASAKI,  Takashi NAKAYAMA,  

[Date]2014/6/12
[Paper #]SDM2014-46
Control of Stacking Fault Structures in Ge_<1-x>Sn_x Epitaxial Growth

Takanori ASANO,  Noriyuki TAOKA,  Osamu NAKATSUKA,  Shigeaki ZAIMA,  

[Date]2014/6/12
[Paper #]SDM2014-47
Efficient Activation of As^+ Ion implantation into Ge substrate for Formation of Low-Resistive Shallow Junction

Shinya HAMADA,  Hideki MURAKAMI,  Takahiro ONO,  Kuniaki HASHIMOTO,  Akio OHTA,  Hiroaki HANAFUSA,  Seiichirou HIGASHI,  Seiichi MIYAZAKI,  

[Date]2014/6/12
[Paper #]SDM2014-48
Characteristics of charge trap flash memory with Al_2O_3/(Ta/Nb)O_x/Al_2O_3 multi-layer by ALD method

T. Nabatame,  A. Ohi,  K. Ito,  M. Takahashi,  T. Chikyo,  

[Date]2014/6/12
[Paper #]SDM2014-49
Study on Resistance-Switching of Si-rich Oxide Films embedding Mn-nanodots

Takashi ARAI,  Akio OHTA,  Katsunori MAKIHARA,  Seiichi MIYAZAKI,  

[Date]2014/6/12
[Paper #]SDM2014-50
Low Temperature Fabrication Processes for p-Cu_2O/SiO_x/n-SiC structured pn memory diode

Atsushi YAMASHITA,  Takahiro TSUKAMOTO,  Yoshiyuki SUDA,  

[Date]2014/6/12
[Paper #]SDM2014-51
Atomistic study of Nitrogen and Hydrogen incorporation effect in Si-rich SiO_2

Hiroki Shirakawa,  Keita Yamaguchi,  Katsumasa Kamiya,  Kenji Shiraishi,  

[Date]2014/6/12
[Paper #]SDM2014-52
Theoretical Study of Electron Transportation in Nanoscale Channel

G. Fujita,  T. Shiokawa,  Y. Takada,  S. Konabe,  M. Muraguchi,  T. Yamamoto,  T. Endoh,  Y. Hatsugai,  K. Shiraishi,  

[Date]2014/6/12
[Paper #]SDM2014-53
Electronic and opto-electronic devices using III-V nanowire/Si heterojunctions

Katsuhiro Tomioka,  Takashi Fukui,  

[Date]2014/6/12
[Paper #]SDM2014-54
Ultra-sharp metal-to-insulator transition in a single crystal VO_2 thin film by controlling the local stress of transition

Takeaki Yajima,  Yuma Ninomiya,  Tomonori Nishimura,  Kosuke Nagashio,  Akira Toriumi,  

[Date]2014/6/12
[Paper #]SDM2014-55
Local Characterization of Resistive Switching Properties of Si-rich Oxide Thin Films by Using Ni Nanodot Electrode

Akio OHTA,  Chong LIU,  Takashi ARAI,  Daichi TAKEUCHI,  Hai ZHANG,  Katsunori MAKIHARA,  Seiichi MIYAZAKI,  

[Date]2014/6/12
[Paper #]SDM2014-56
Temperature Dependence of Resistance of Conductive Nano-filament in Resistance Change Memory

Shintaro OTSUKA,  Yoshifumi HAMADA,  Tomohiro SHIMIZU,  Shoso SHINGUBARA,  

[Date]2014/6/12
[Paper #]SDM2014-57
Controlling a formation of conducting filaments in a resistive change memory by nano holes of a porous alumina and improvement of the switching characteristics

Kouichi TAKASE,  Yusuke TANIMOTO,  Shintaro OTSUKA,  Tomohiro SHIMIZU,  Shoso SHINGUBARA,  

[Date]2014/6/12
[Paper #]SDM2014-58
Atomic Switch-type Resistive Switching Memory using Oxide Nanofilms and Its Applications

Tohru TSURUOKA,  Tsuyoshi HASEGAWA,  

[Date]2014/6/12
[Paper #]SDM2014-59
Low temperature poly-crystallization of group-IV semiconductor films on insulators : Use of low-melting-point Sn

Masashi KUROSAWA,  Noriyuki TAOKA,  Noriyuki TAOKA,  TAKEUCHI Wakana /,  Mitsuo SAKASHITA,  Osamu NAKATSUKA,  Shigeaki ZAIMA,  

[Date]2014/6/12
[Paper #]SDM2014-60
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