IEICE Technical Committee

Electronics-Silicon Devices and Materials(Date:2014/06/12)

Presentation

表紙

[Date]2014/6/12
[Paper #]

Process Design of High-k/Ge Gate Stack for Improving Thermal Stability and Interface Properties in Sub-1-nm Regime

Ryohei ASAHARA, Takuji HOSOI, Takayoshi SHIMURA, Heiji WATANABE,

[Date]2014/6/12
[Paper #]SDM2014-43

Investigation of Al-PMA Effect on Al_2O_3/GeO_x/Ge Gate Stack

Yuta NAGATOMI, Yuichi NAGAOKA, Keisuke YAMAMOTO, Dong WANG, Hiroshi NAKASHIMA,

[Date]2014/6/12
[Paper #]SDM2014-44

Alleviation of Fermi level pinning of Sn/Ge contact

Akihiro Suzuki, Shunsuke Asaba, Jun Yokoi, Masashi Kurosawa, Kimihiko Kato, Mitsuo Sakashita, Noriyuki Taoka, Osamu Nakatsuka, Shigeaki Zaima,

[Date]2014/6/12
[Paper #]SDM2014-45

Stability of vacancy defect around metal/Ge interfaces : First-principles Study

Shogo SASAKI, Takashi NAKAYAMA,

[Date]2014/6/12
[Paper #]SDM2014-46

Control of Stacking Fault Structures in Ge_<1-x>Sn_x Epitaxial Growth

Takanori ASANO, Noriyuki TAOKA, Osamu NAKATSUKA, Shigeaki ZAIMA,

[Date]2014/6/12
[Paper #]SDM2014-47

Efficient Activation of As^+ Ion implantation into Ge substrate for Formation of Low-Resistive Shallow Junction

Shinya HAMADA, Hideki MURAKAMI, Takahiro ONO, Kuniaki HASHIMOTO, Akio OHTA, Hiroaki HANAFUSA, Seiichirou HIGASHI, Seiichi MIYAZAKI,

[Date]2014/6/12
[Paper #]SDM2014-48

Characteristics of charge trap flash memory with Al_2O_3/(Ta/Nb)O_x/Al_2O_3 multi-layer by ALD method

T. Nabatame, A. Ohi, K. Ito, M. Takahashi, T. Chikyo,

[Date]2014/6/12
[Paper #]SDM2014-49

Study on Resistance-Switching of Si-rich Oxide Films embedding Mn-nanodots

Takashi ARAI, Akio OHTA, Katsunori MAKIHARA, Seiichi MIYAZAKI,

[Date]2014/6/12
[Paper #]SDM2014-50

Low Temperature Fabrication Processes for p-Cu_2O/SiO_x/n-SiC structured pn memory diode

Atsushi YAMASHITA, Takahiro TSUKAMOTO, Yoshiyuki SUDA,

[Date]2014/6/12
[Paper #]SDM2014-51

Atomistic study of Nitrogen and Hydrogen incorporation effect in Si-rich SiO_2

Hiroki Shirakawa, Keita Yamaguchi, Katsumasa Kamiya, Kenji Shiraishi,

[Date]2014/6/12
[Paper #]SDM2014-52

Theoretical Study of Electron Transportation in Nanoscale Channel

G. Fujita, T. Shiokawa, Y. Takada, S. Konabe, M. Muraguchi, T. Yamamoto, T. Endoh, Y. Hatsugai, K. Shiraishi,

[Date]2014/6/12
[Paper #]SDM2014-53

Electronic and opto-electronic devices using III-V nanowire/Si heterojunctions

Katsuhiro Tomioka, Takashi Fukui,

[Date]2014/6/12
[Paper #]SDM2014-54

Ultra-sharp metal-to-insulator transition in a single crystal VO_2 thin film by controlling the local stress of transition

Takeaki Yajima, Yuma Ninomiya, Tomonori Nishimura, Kosuke Nagashio, Akira Toriumi,

[Date]2014/6/12
[Paper #]SDM2014-55

Local Characterization of Resistive Switching Properties of Si-rich Oxide Thin Films by Using Ni Nanodot Electrode

Akio OHTA, Chong LIU, Takashi ARAI, Daichi TAKEUCHI, Hai ZHANG, Katsunori MAKIHARA, Seiichi MIYAZAKI,

[Date]2014/6/12
[Paper #]SDM2014-56

Temperature Dependence of Resistance of Conductive Nano-filament in Resistance Change Memory

Shintaro OTSUKA, Yoshifumi HAMADA, Tomohiro SHIMIZU, Shoso SHINGUBARA,

[Date]2014/6/12
[Paper #]SDM2014-57

Controlling a formation of conducting filaments in a resistive change memory by nano holes of a porous alumina and improvement of the switching characteristics

Kouichi TAKASE, Yusuke TANIMOTO, Shintaro OTSUKA, Tomohiro SHIMIZU, Shoso SHINGUBARA,

[Date]2014/6/12
[Paper #]SDM2014-58

Atomic Switch-type Resistive Switching Memory using Oxide Nanofilms and Its Applications

Tohru TSURUOKA, Tsuyoshi HASEGAWA,

[Date]2014/6/12
[Paper #]SDM2014-59

Low temperature poly-crystallization of group-IV semiconductor films on insulators : Use of low-melting-point Sn

Masashi KUROSAWA, Noriyuki TAOKA, Noriyuki TAOKA, TAKEUCHI Wakana /, Mitsuo SAKASHITA, Osamu NAKATSUKA, Shigeaki ZAIMA,

[Date]2014/6/12
[Paper #]SDM2014-60