Electronics-Silicon Devices and Materials(Date:2013/11/07)

Presentation
表紙

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[Date]2013/11/7
[Paper #]
目次

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[Date]2013/11/7
[Paper #]
2013 SISPAD Review : Transport and Reliability

Nobuya MORI,  

[Date]2013/11/7
[Paper #]SDM2013-99
2013 SISPAD Review : Workshop 1

Masashi UEMATSU,  

[Date]2013/11/7
[Paper #]SDM2013-100
Role of Computational Sciences in Design of Modern Electron Devices

Kenji SHIRAISHI,  

[Date]2013/11/7
[Paper #]SDM2013-101
Atomistic Study of Sulfur Diffusion and S2 Formation in Silicon during Low-temperature Rapid Thermal Annealing

Takahisa Kanemura,  Koichi Kato,  Hiroyoshi Tanimoto,  Nobutoshi Aoki,  Yoshiaki Toyoshima,  

[Date]2013/11/7
[Paper #]SDM2013-102
The effect of incorporated elements in nitrogen vacancies on electron trap level in silicon nitride

Ken'ichiro SONODA,  Eiji TSUKUDA,  Motoaki TANIZAWA,  Kiyoshi ISHIKAWA,  Yasuo YAMAGUCHI,  

[Date]2013/11/7
[Paper #]SDM2013-103
Analysis of Low-Frequency Noise in Silicon Tri-Gate Nanowire Transistors

Masumi SAITOH,  Kensuke OTA,  Chika TANAKA,  Toshinori NUMATA,  

[Date]2013/11/7
[Paper #]SDM2013-104
Advanced MOSFET simulations using a quantum energy trasport model

Shohiro Sho,  Shinji Odanaka,  

[Date]2013/11/7
[Paper #]SDM2013-105
Analytical Drain Current and Threshold Voltage Model and Device Design of Short-Channel Si Nanowire Transistors

Chika TANAKA,  Daisuke HAGISHIMA,  Ken UCHIDA,  Toshinori NUMATA,  

[Date]2013/11/7
[Paper #]SDM2013-106
Analytic Compact Model of Ballistic and Quasi-ballistic Cylindrical Gate-All-Around MOSFET Incorporating Drain-Induced Barrier Lowering Effect

He Cheng,  Shigeyasu Uno,  Kazuo Nakazato,  

[Date]2013/11/7
[Paper #]SDM2013-107
Physical Model and Simulations on Resistive Transition of Pt/TiO_2/Pt Capacitor

Yasuhisa OMURA,  Yusuke KONDO,  

[Date]2013/11/7
[Paper #]SDM2013-108
Theoretical Modeling of Double-Gate Lateral Tunnel FET

Yasuhisa Omura,  Daiki Sato,  Shingo Sato,  Abhijit Mallik,  

[Date]2013/11/7
[Paper #]SDM2013-109
NEGF Simulation for Studying Effect of Screening and Impurity Scattering in Junctionless Transistors

Akiko UEDA,  Mathieu LUISIER,  Katsuhisa YOSHIDA,  Syuta HONDA,  Nobuyuki SANO,  

[Date]2013/11/7
[Paper #]SDM2013-110
Quantum transport simulation of ultrasmall III-V MOSFETs using Wigner Monte Carlo approach

Masaki Ohmori,  Shunsuke Koba,  Yosuke Maegawa,  Hideaki Tsuchiya,  Yoshinari Kamakura,  Nobuya Mori,  Matsuto Ogawa,  

[Date]2013/11/7
[Paper #]SDM2013-111
Analysis of Thermoelectric Performance in Silicon Nanostructures Based on Monte Carlo Method

ADISUSILO Indra NUR,  Kentaro KUKITA,  Yoshinari KAMAKURA,  

[Date]2013/11/7
[Paper #]SDM2013-112
Possible Unified Model for the Hooge Parameter in Inversion-Layer-Channel MOSFET

Yasuhisa OMURA,  

[Date]2013/11/7
[Paper #]SDM2013-113
Impacts of Channel Doping on Random Telegraph Signal Noise and Successful Noise Suppression by Mobility Enhancement

J. Chen,  Y. Higashi,  I. Hirano,  Y. Mitani,  

[Date]2013/11/7
[Paper #]SDM2013-114
Reconsideration of Effective MOSFET Channel Length

Kazuo TERADA,  Kazuhiko SANAI,  Katsuhiro TSUJI,  

[Date]2013/11/7
[Paper #]SDM2013-115
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[Date]2013/11/7
[Paper #]
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