Electronics-Silicon Devices and Materials(Date:2013/10/10)

Presentation
表紙

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[Date]2013/10/10
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目次

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[Date]2013/10/10
[Paper #]
Technological Trend of SiC Power Devices

Takashi SHINOHE,  

[Date]2013/10/10
[Paper #]SDM2013-88
Electrical Properties and Reliability of Ultrathin HfN Gate Insulator Formed on Si(100) and Si(110)

Nithi ATTHI,  Dae-hee HAN,  Shun-ichiro OHMI,  

[Date]2013/10/10
[Paper #]SDM2013-89
Effect of silicon surface roughness on 3-D MOS capacitor with ultrathin HfON gate insulator formed by ECR plasma sputtering

Dae-Hee Han,  Shun-ichiro Ohmi,  

[Date]2013/10/10
[Paper #]SDM2013-90
A device structure design of multi-gate MOSFETs based on carrier mobility characteristics of atomically flattened Si surface

Rihito Kuroda,  Yukihisa Nakao,  Akinobu Teramoto,  Shietoshi Sugawa,  Tadahiro Ohmi,  

[Date]2013/10/10
[Paper #]SDM2013-91
Si photodiode wiht high sensitivity and high stability to UV-light with 100% internal Q.E. and high transmittance on-chip multilayer dielectric stack

Yasumasa KODA,  Rihito KURODA,  Yukihisa NAKAO,  Shigetoshi SUGAWA,  

[Date]2013/10/10
[Paper #]SDM2013-92
A Study on Nitrogen-Doped LaB_6 Thin Film Formation and Its Device Applications

Yasutaka MAEDA,  Shun-ichiro OHMI,  Tetsuya GOTO,  Tadahiro OHMI,  

[Date]2013/10/10
[Paper #]SDM2013-93
バイアス印加硬X線光電子分光法を用いた絶縁膜/Si界面の評価(プロセス科学と新プロセス技術)

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[Date]2013/10/10
[Paper #]SDM2013-94
Classical molecular dynamics simulations of plasma-induced physical damage : defect generation mechanisms in fin-type MOSFET

Koji ERIGUCHI,  Asahiko MATSUDA,  Yoshinori NAKAKUBO,  Yoshinori TAKAO,  Kouichi ONO,  

[Date]2013/10/10
[Paper #]SDM2013-95
Design method of stacked type non-volatile memory

Shigeyoshi WATANABE,  

[Date]2013/10/10
[Paper #]SDM2013-96
Effects of plasma-induced charging damage on random telegraph noise (RTN) behaviors in advanced MOSFETs

Masayuki KAMEI,  Yoshinori NAKAKUBO,  Yoshinori TAKAO,  Koji ERIGUCHI,  Kouichi ONO,  

[Date]2013/10/10
[Paper #]SDM2013-97
Study of Time Constant Analysis in Random Telegraph Noise at the Subthreshold Voltage Region

Akihiro YONEZAWA,  Akinobu TERAMOTO,  Toshiki OBARA,  Rihito KURODA,  Shigetoshi SUGAWA,  Tadahiro OHMI,  

[Date]2013/10/10
[Paper #]SDM2013-98
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[Date]2013/10/10
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Notice for Photocopying

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[Date]2013/10/10
[Paper #]
奥付

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[Date]2013/10/10
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裏表紙

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[Date]2013/10/10
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