Electronics-Silicon Devices and Materials(Date:2013/06/11)

Presentation
表紙

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[Date]2013/6/11
[Paper #]
目次

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[Date]2013/6/11
[Paper #]
Control of Pr-Oxide Crystalline Phase by Regulating Oxidant Partial Pressure and Si Diffusion

Kimihiko KATO,  Mitsuo SAKASHITA,  Wakana TAKEUCHI,  Noriyuki TAOKA,  Osamu NAKATSUKA,  Shigeaki ZAIMA,  

[Date]2013/6/11
[Paper #]SDM2013-44
Formation of Ultra Thin GeO_2 Film by Tetraethoxy-Germanium

Teppei YOSHIDA,  Kimihiko KATO,  Shigehisa SHIBAYAMA,  Mitsuo SAKASHITA,  Noriyuki TAOKA,  Wakana TAKEUCHI,  Osamu NAKATSUKA,  Shigeaki ZAIMA,  

[Date]2013/6/11
[Paper #]SDM2013-45
Clarification of oxidation mechanisms in Al_2O_3/Ge structure and impact of interface reactions on interface properties

Shigehisa SHIBAYAMA,  Kimihiko KATO,  Mitsuo SAKASHITA,  Wakana TAKEUCHI,  NAKATSUKA Osamu /,  Shigeaki ZAIMA,  

[Date]2013/6/11
[Paper #]SDM2013-46
Germanide Formation in Metal/high-k/Ge Gate Stacks and Its Impact on Electrical Properties

Takuji HOSOI,  Iori HIDESHIMA,  Yuya MINOURA,  Ryohei TANAKA,  Akitaka YOSHIGOE,  Yuden TERAOKA,  Takayoshi SHIMURA,  Heiji WATANABE,  

[Date]2013/6/11
[Paper #]SDM2013-47
Suppression of GeO_x with rutile TiO_2 Interlayer between HfO_2 and Ge

Kazuyoshi Kobashi,  Takahiro Nagata,  Toshihide Nabatame,  Yoshiyuki Yamashita,  Atsushi Ogura,  Toyohiro Chikyow,  

[Date]2013/6/11
[Paper #]SDM2013-48
Mobility Enhancement for Ge p-MOSFET with Metal Source/Drain by Hf Introduction into Gate Stack

Keisuke YAMAMOTO,  Takahiro SADA,  Dong WANG,  Hiroshi NAKASHIMA,  

[Date]2013/6/11
[Paper #]SDM2013-49
Impact of metal gate electrodes on electrical properties of InGaAs MOS gate stacks

Chih-yu CHANG,  Masafumi YOKOYAMA,  Sang-hyeon KIM,  Osamu ICHIKAWA,  Takenori OSADA,  Masahiko HATA,  Mitsuru TAKENAKA,  Shinichi TAKAGI,  

[Date]2013/6/11
[Paper #]SDM2013-50
Schottky Barrier Height and spin polarization of Fe3Si/Ge Interfaces : First-Principles Study

Kyosuke KOBINATA,  Takashi NAKAYAMA,  

[Date]2013/6/11
[Paper #]SDM2013-51
Guiding principles of Long Lifespan Archive Memory using MONOS type Memory

Hiroki Shirakawa,  Keita Yamaguchi,  Katsumasa Kamiya,  Kenji Shiraishi,  

[Date]2013/6/11
[Paper #]SDM2013-52
High Density Formation of CoPt Alloy Nanodots Induced by Remote Hydrogen Plasma and Charging and Magnetizing Characteristics

Katsunori Makihara,  Ryo Fukuoka,  Hai Zhang,  Yuuki Kabeya,  Akio Ohta,  Seiichi Miyazaki,  

[Date]2013/6/11
[Paper #]SDM2013-53
Epitaxial growth of iron oxide nanodots on Si substrate and their electronic states

Takafumi ISHIBE,  Yoshiaki NAKAMURA,  Hideki MATSUI,  Syotaro TAKEUCHI,  Akira SAKAI,  

[Date]2013/6/11
[Paper #]SDM2013-54
Resistive Memory Effect of Bio-nanoparticle in Si Oxide Film

Mutsunori UENUMA,  Takahiko BAN,  Ichiro YAMASHITA,  Yukiharu URAOKA,  

[Date]2013/6/11
[Paper #]SDM2013-55
Resistive Switching Properties of SiO_x/TiO_2 Multi-Stack in Ti-electrode MIM Diodes

Akio OHTA,  Motoki FUKUSIMA,  Katsunori MAKIHARA,  Hideki MURAKAMI,  Seiichiro HIGASHI,  Seiichi MIYAZAKI,  

[Date]2013/6/11
[Paper #]SDM2013-56
SiC Electric-Field-Induced Resistive Nonvolatile Memory : MIS and pn-Diode Type Memories

Yoshiyuki SUDA,  Tatsumi KOMATSU,  Nobuo YAMAGUCHI,  Yoshihiko SATO,  Yukino YAMADA,  Atsushi YAMASHITA,  Takahiro TSUKAMOTO,  

[Date]2013/6/11
[Paper #]SDM2013-57
High Performance of SiC-MOS Devices by POCl_3 Annealing

Hiroshi YANO,  Tomoaki HATAYAMA,  Takashi FUYUKI,  

[Date]2013/6/11
[Paper #]SDM2013-58
Implementation of High-k Gate Dielectrics in SiC Power MOSFET

Takuji HOSOI,  Shuji AZUMO,  Yusaku KASHIWAGI,  Shigetoshi HOSAKA,  Ryota NAKAMURA,  Yuki NAKANO,  Hirokazu ASAHARA,  Takashi NAKAMURA,  Tsunenobu KIMOTO,  Takayoshi SHIMURA,  Heiji WATANABE,  

[Date]2013/6/11
[Paper #]SDM2013-59
Challenges of high-reliability in SiC-MOS gate structures

Junji SENZAKI,  Atsushi SHIMOZATO,  Yasunori TANAKA,  Hajime OKUMURA,  

[Date]2013/6/11
[Paper #]SDM2013-60
Unusual Generation and Elimination of Mobile Ions in Thermally Grown Oxides in SiC-MOS Devices

Heiji WATANABE,  Atthawut CHANTHAPHAN,  Yuki NAKANO,  Takashi NAKAMURA,  Takuji HOSOI,  Takayoshi SHIMURA,  

[Date]2013/6/11
[Paper #]SDM2013-61
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