Electronics-Silicon Devices and Materials(Date:2012/11/08)

Presentation
表紙

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[Date]2012/11/8
[Paper #]
目次

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[Date]2012/11/8
[Paper #]
2012 SISPAD Review : quantum transport, new materials, atomistic molecular modeling, and other topics

Yoshinari KAMAKURA,  

[Date]2012/11/8
[Paper #]SDM2012-98
2012 SISPAD Paper Review : Compact Model, Device Variability, Device Reliability

Takahiro IIZUKA,  

[Date]2012/11/8
[Paper #]SDM2012-99
High Performance SiC Power Devices and Modules : Miniaturization of System by Low-Ron and High Temperature Operation

Takashi NAKAMURA,  Masatoshi AKETA,  Yuki NAKANO,  Takukazu Otsuka,  Toshio HANADA,  

[Date]2012/11/8
[Paper #]SDM2012-100
New design method for power devices using topology optimization based on the adjoint variable method

Katsuya NOMURA,  Tsuguo KONDOH,  Tsuyoshi ISHIKAWA,  Atsushi KAWAMOTO,  Tadayoshi MATSUMORI,  Takahide SUGIYAMA,  

[Date]2012/11/8
[Paper #]SDM2012-101
Fluctuation of MOSFETs from Low-Frequency Noise to Thermal Noise : Using a Novel Measurement System beyond 100 MHz

Kenji OHMORI,  

[Date]2012/11/8
[Paper #]SDM2012-102
Neutral and Attractive Traps in Random Telegraph Signal Noise Phenomena using (100)- and (110)-Orientated CMOSFETs

J. Chen,  I. Hirano,  K. Tatsumura,  Y. Mitani,  

[Date]2012/11/8
[Paper #]SDM2012-103
An Estimation of the Carrier Mobility Model Influenced by Inversion Charge Confinement for Sub-20nm MOSFETs

Masahiro YAMAMOTO,  Akira HIROKI,  Jong Chul YOON,  

[Date]2012/11/8
[Paper #]SDM2012-104
Prospect of Low-Energy Operation of Scaled Cross-Current Tetrode (XCT)SOICMOS

Daiki SATO,  Yasuhisa OMURA,  

[Date]2012/11/8
[Paper #]SDM2012-105
Empirical Pseudopotential Calculations of Two-Dimensional Electronic States in 4H-SiC Inversion layers

Ryuta WATANABE,  Yoshinari KAMAKURA,  

[Date]2012/11/8
[Paper #]SDM2012-106
Impact of Discrete Dopant on Characteristics of Nanowire Transistors KMC and NEGF Study

Nobuya MORI,  Masashi UEMATSU,  Hideki MINARI,  Gennady MIL'NIKOV,  Kohei M. ITOH,  

[Date]2012/11/8
[Paper #]SDM2012-107
Molecular Dynamics Simulation of Heat Transport in Silicon Fin Structures

Tomofumi ZUSHI,  Kenji OHMORI,  Keisaku YAMADA,  Takanobu WATANABE,  

[Date]2012/11/8
[Paper #]SDM2012-108
Monte Carlo Simulation of Phonon Transport in Silicon Thin Films Including Realistic Dispersion Relation

Kentaro KUKITA,  Yoshinari KAMAKURA,  

[Date]2012/11/8
[Paper #]SDM2012-109
Effect of a Three-dimensional Strain Field on the Electronic Band Structure of Carbon Nanotubes and Graphene Sheets

Ken Suzuki,  Masato Ohnishi,  Hideo Miura,  

[Date]2012/11/8
[Paper #]SDM2012-110
Nonlocal band to band tunneling model for tunnel-FETs : Device and circuit models

Koichi FUKUDA,  Takahiro MORI,  Wataru Mizubayashi,  Yukinori MORITA,  Akito TANABE,  Meishoku MASAHARA,  Tetsuji YASUDA,  Shinji MIGITA,  Hiroyuki OTA,  

[Date]2012/11/8
[Paper #]SDM2012-111
ANALYTIC COMPACT MODEL of BALLISTIC and QUASI-BALLISTIC CYLINDRICAL GATE-ALL-AROUND MOSFET INCLUDING TWO SUBBANDS for CIRCUIT SIMULATION

He CHENG,  Shigeyasu UNO,  Tatsuhiro NUMATA,  Kazuo NAKAZATO,  

[Date]2012/11/8
[Paper #]SDM2012-112
Design method of system LSI and SEA cell type DRAM with tunneling type transistor

Ryosuke SUZUKI,  Shigeyoshi WATANABE,  

[Date]2012/11/8
[Paper #]SDM2012-113
Design Technology of stacked Type Chain PRAM Readout

Sho KATO,  Shgeyoshi WATANABE,  

[Date]2012/11/8
[Paper #]SDM2012-114
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[Date]2012/11/8
[Paper #]
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