Electronics-Silicon Devices and Materials(Date:2012/06/14)

Presentation
表紙

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[Date]2012/6/14
[Paper #]
目次

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[Date]2012/6/14
[Paper #]
Evaluation of Chemical Structures and Resistive Switching Behaviors of Pt/Si-rich Oxide/TiN System

Motoki FUKUSHIMA,  Akio OHTA,  Katsunori MAKIHARA,  Seiichi MIYAZAKI,  

[Date]2012/6/14
[Paper #]SDM2012-43
Resistive Switching Properties of Directly Bonded SrTiO_3 Substrate

Ryota Asada,  Pham Phu Than Son,  Kokate Nishad Vasant,  Jun Kikkawa,  Shotaro Takeuchi,  Yoshiaki Nakamura,  Akira Sakai,  

[Date]2012/6/14
[Paper #]SDM2012-44
Photoexcited Carrier Transfer in NiSi-Nanodots/Si-Quantum-Dots Hybrid Floating Gate in MOS Structures

Mitsuhisa IKEDA,  Katsunori MAKIHARA,  Seiichi MIYAZAKI,  

[Date]2012/6/14
[Paper #]SDM2012-45
Nanodot-Type Floating Gate Memory with High-Density Nanodot Array Formed Utilizing Listeria Dps

Hiroki Kamitake,  Kosuke Ohara,  Mutsunori Uenuma,  Bin Zheng,  Yasuaki Ishikawa,  Ichiro Yamashita,  Yukiharu Uraoka,  

[Date]2012/6/14
[Paper #]SDM2012-46
High-mobility Ge MOSFETs with ultrathin GeON gate dielectrics

Yuya MINOURA,  Atsushi KASUYA,  Takuji HOSOI,  Takayoshi Shimura,  Heiji WATANABE,  

[Date]2012/6/14
[Paper #]SDM2012-47
Clarification of Interfacial Reaction Mechanism in O_2 Annealing or O radical Process for Al_2O_3/Ge Structure

Shigehisa SHIBAYAMA,  Kimihiko KATO,  Mitsuo SAKASHITA,  Wakana TAKEUCHI,  NAKATSUKA Osamu /,  Shigeaki ZAIMA,  

[Date]2012/6/14
[Paper #]SDM2012-48
Interface Reaction Control of HfO_2/Ge structure by an Insertion of TaO_x layer

Hideki MURAKAMI,  Kento MISHIMA,  Akio OHTA,  Kuniaki HASHIMOTO,  Seiichiro HIGASHI,  Seiichi MIYAZAKI,  

[Date]2012/6/14
[Paper #]SDM2012-49
Effect of Reducing Character of Gate Metals on Pr Valence State in Pr Oxide Film on Ge Substrate

Kimihiko KATO,  Mitsuo SAKASHITA,  Wakana TAKEUCHI,  Noriyuki TAOKA,  Osamu NAKATSUKA,  Shigeaki ZAIMA,  

[Date]2012/6/14
[Paper #]SDM2012-50
Oxygen-induced High-k Dielectric Degradation in TiN/Hf-based High-k Gate Stacks

Takuji HOSOI,  Yuki ODAKE,  Hiroaki ARIMURA,  Keisuke CHIKARAISHI,  Naomu KITANO,  Takayoshi SHIMURA,  Heiji WATANABE,  

[Date]2012/6/14
[Paper #]SDM2012-51
Surface Segregation Behavior of B, Ga, Sb, and As Dopant Atoms on Ge(100) and Ge(111) Examined with a First-principles Method

F Iijima,  K Sawano,  J Ushio,  T Maruizumi,  Y Shiraki,  

[Date]2012/6/14
[Paper #]SDM2012-52
Control of Schottky Barrier Height at Al/Ge Junctions by Ultrathin Layer Insertion

Akio Ohta,  Masafumi Matsui,  Hideki Murakami,  Seiichiro Higashi,  Seiichi Miyazaki,  

[Date]2012/6/14
[Paper #]SDM2012-53
Relation between Schottky-barrier change and structural disorders at metal/(Si,Ge) interfaces : First-principles study

Kyosuke KOBINATA,  Takashi NAKAYAMA,  

[Date]2012/6/14
[Paper #]SDM2012-54
Chemical Analysis of As^+ -implanted Ge(100)

Takahiro Ono,  Akio Ohta,  Hideki Murakami,  Seiichiro Higashi,  Seiichi Miyazaki,  

[Date]2012/6/14
[Paper #]SDM2012-55
Detection of Impurities Having Various Chemical Bonding States and their Depth Profiles in Ultra Shallow Junctions

Kazuo TSUTSUI,  Jun KANEHARA,  Youhei MIYATA,  Hiroshi NOHIRA,  Yudai IZUMI,  Takayuki MURO,  Toyohiko KINOSHITA,  Parhat AHMET,  Kuniyuki KAKUSHIMA,  Takeo HATTORI,  Hiroshi IWAI,  

[Date]2012/6/14
[Paper #]SDM2012-56
Schottky Barrier Height Lowering by Dopant Segregation and Exact Control of Junction Position in Epitaxial NiSi_2 Source/Drain

W. Mizubayashi,  S. Migita,  Y. Morita,  H. Ota,  

[Date]2012/6/14
[Paper #]SDM2012-57
Doping and behaviors of impurity atoms in silicon nanowires : Segregation behaviors of dopant atoms during thermal oxidation

Naoki FUKATA,  Ryo TAKIGUCHI,  Shinya ISHIDA,  Shigeki YOKONO,  Takashi SEKIGUCHI,  Kouichi MURAKAMI,  

[Date]2012/6/14
[Paper #]SDM2012-58
Interface controlled silicide Schottky S/D for future 3D devices

Yuta Tamura,  Ryo Yoshihara,  Kuniyuki Kakushima,  Parhat Ahmet,  Yoshinori Kataoka,  Akira Nishiyama,  Nobuyuki Sugii,  Kazuo Tsutsui,  Kenji Natori,  Takeo Hattori,  Hiroshi Iwai,  

[Date]2012/6/14
[Paper #]SDM2012-59
Formation of Extremely Thin Ni-InGaAs Alloyed Contact for Scaled InGaAs MOSFETs and its Thermal Stability

Toshifumi IRISAWA,  Minoru ODA,  Tsutomu TEZUKA,  

[Date]2012/6/14
[Paper #]SDM2012-60
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