Electronics-Silicon Devices and Materials(Date:2011/11/03)

Presentation
表紙

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[Date]2011/11/3
[Paper #]
目次

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[Date]2011/11/3
[Paper #]
Equivalent circuit models for MEMS sensors and actuators based on electrical circuit simulator

Hiroshi TOSHIYOSHI,  

[Date]2011/11/3
[Paper #]SDM2011-115
SISPAD 2011 Review

Hirokazu HAYASHI,  

[Date]2011/11/3
[Paper #]SDM2011-116
Phase-change memoy driven by poly-Si transistor enabling three-dimensional stacking

Yoshitaka SASAGO,  Masaharu KINOSHITA,  Hiroyuki MINEMURA,  Yumiko ANZAI,  Mitsuharu TAI,  Kenzo Kurotsuchi,  Seiichi MORITA,  Toshikazu TAKAHASHI,  Takashi TAKAHAMA,  Tadao MORIMOTO,  Toshiyuki MINE,  Akio SHIMA,  Takashi KOBAYASHI,  

[Date]2011/11/3
[Paper #]SDM2011-117
Comprehensive Understanding of Random Telegraph Noise with Physics Based Simulation

Y. Higashi,  N. Momo,  H. S. Momose,  T. Ohguro,  K. Matsuzawa,  

[Date]2011/11/3
[Paper #]SDM2011-118
Device Simulation of STM Carrier Profiling

Koichi FUKUDA,  Masayasu NISHIZAWA,  Tetsuya TADA,  Leonid BOLOTOV,  Kaina SUZUKI,  Shigeo Sato,  Hiroshi ARIMOTO,  Toshihiko KANAYAMA,  

[Date]2011/11/3
[Paper #]SDM2011-119
Simulation of Phonon Transport in Silicon Nanostructures Based on Monte-Carlo Method

Kentaro KUKITA,  Yoshinari KAMAKURA,  

[Date]2011/11/3
[Paper #]SDM2011-120
Comparisons of Ballistic Device Performances of Si Nanowire and InAs Nanowire FETs based on First-Principles Band Structure Calculation

Naoya TAKIGUCHI,  Shunsuke KOBA,  Hideaki TSUCHIYA,  Matsuto OGAWA,  

[Date]2011/11/3
[Paper #]SDM2011-121
Analytical Compact Model Using Perturbation Method for Circuit Simulation of Ballistic and Quasi-ballistic Gate-All-Around MOSFET with Cylindrical Cross Section

He CHENG,  Shigeyasu UNO,  Tatsuhiro NUMATA,  Kazuo NAKAZATO,  

[Date]2011/11/3
[Paper #]SDM2011-122
Enhancement of Current Density in Asymmetric Horn-Shaped Channel / Ensemble Monte-Carlo/Molecular Dynamics Simulation

Takefumi KAMIOKA,  Hiroya IMAI,  Kenji OHMORI,  Kenji SHIRAISHI,  Yoshinari KAMAKURA,  Takanobu WATANABE,  

[Date]2011/11/3
[Paper #]SDM2011-123
Usages of TCAD simulation on development of semiconductor for vehicles and future problems

Hisashi Ishimabushi,  Takashi Ueta,  Masaru Nagao,  Kimimori Hamada,  

[Date]2011/11/3
[Paper #]SDM2011-124
Investigation of Scaling Limit Due to Short Channel Effects and Channel Boosting Leakage in Bulk and SOI NAND Flash Memory Cells

Kousuke MIYAJI,  Chinglin HUNG,  Ken TAKEUCHI,  

[Date]2011/11/3
[Paper #]SDM2011-125
Design of a Fully-Parallel High-Density Nonvolatile TCAM Using MTJ Devices

Akira KATSUMATA,  Shoun MATSUNAGA,  Takahiro HANYU,  

[Date]2011/11/3
[Paper #]SDM2011-126
Design Technology of stacked Type Chain PRAM

Sho KATO,  Shgeyoshi WATANABE,  

[Date]2011/11/3
[Paper #]SDM2011-127
Gate Voltage Dependence of Channel Length Modulation Coefficient for Nanoscale MOSFETs

Akira HIROKI,  Jong Chul YOON,  

[Date]2011/11/3
[Paper #]SDM2011-128
Higher-order Effects of Source and Drain Parasitic Resistances for Nanoscale MOSFETs

Jong Chul Yoon,  Akira Hiroki,  

[Date]2011/11/3
[Paper #]SDM2011-129
An Efficient Analysis of Large-Scale RLC Circuits with CMOS Loads

Yuichi TANJI,  

[Date]2011/11/3
[Paper #]SDM2011-130
Study of pattern area reduction for standard cell with planar and SGT transistor

Takahiro KODAMA,  Shigeyoshi WATANABE,  

[Date]2011/11/3
[Paper #]SDM2011-131
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[Date]2011/11/3
[Paper #]
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