Electronics-Silicon Devices and Materials(Date:2011/10/13)

Presentation
表紙

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[Date]2011/10/13
[Paper #]
目次

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[Date]2011/10/13
[Paper #]
Characteristics Variability and Random Telegraph Noise in Fully Depleted SOI MOSFETs

Toshiro HIRAMOTO,  

[Date]2011/10/13
[Paper #]SDM2011-97
Reduction of Random Telegraph Noise with Broad Channel MOSFET

Hiroyoshi SUZUKI,  Rihito KURODA,  Akinobu TERAMOTO,  Akihiro YONEZAWA,  Hiroaki MATSUOKA,  Taiki NAKAZAWA,  Kenichi ABE,  Shigetoshi SUGAWA,  Tadahiro OHMI,  

[Date]2011/10/13
[Paper #]SDM2011-98
Statistical Evaluations of Generation and Recovery Characteristics of Anomalous Stress Induced Leakage Current

Takuya INATSUKA,  Yuki KUMAGAI,  Rihito KURODA,  Akinobu TERAMOTO,  Shigetoshi SUGAWA,  Tadahiro OHMI,  

[Date]2011/10/13
[Paper #]SDM2011-99
Effect of Si surface roughness on electrical characteristics of HfON gate insulator formed by ECR plasma sputtering

Dae-Hee Han,  Shun-ichro Ohmi,  

[Date]2011/10/13
[Paper #]SDM2011-100
On the relation between interface flattening effect and insulator breakdown characteristic of radical reaction based insulator formation technology

Rihito Kuroda,  Akinobu Teramoto,  Xiang Li,  Tomoyuki Suwa,  Shigetoshi Sugawa,  Tadahiro Ohmi,  

[Date]2011/10/13
[Paper #]SDM2011-101
Science Based New Silicon Technologies

Tadahiro OHMI,  

[Date]2011/10/13
[Paper #]SDM2011-102
Study of HfO_2/Si/strained-Ge/SiGe using Angle Resolved x-ray Photoelectron Spectroscopy

Hiroshi NOHIRA,  Arata KOMATSU,  Kentarou NASU,  Yusuke HOSHI,  Toru KUREBAYASHI,  Kentarou SAWANO,  Maksym Myronov,  Yasuhiro SHIRAKI,  

[Date]2011/10/13
[Paper #]SDM2011-103
Channel strain measurements in 32nm-node CMOSFETs

Munehisa Takei,  Hiroki Hashiguchi,  Takuya Yamaguchi,  Daisuke Kosemura,  Kohki Nagata,  Atsushi Ogura,  

[Date]2011/10/13
[Paper #]SDM2011-104
Clear Difference between the Chemical Structure of SiO_2/Si Interfaces Formed Using Oxygen Radicals and Oxygen Molecules

Tomoyuki SUWA,  Yuki KUMAGAI,  Akinobu TERAMOTO,  Toyohiko KINOSHITA,  Takayuki MURO,  Takeo HATTORI,  Tadahiro OHMI,  

[Date]2011/10/13
[Paper #]SDM2011-105
AR-XPS Study on Chemical Bonding State of In_<0.53>Ga_<0.47>As Surface treated by Various Surface Treatments

Y. Numajiri,  K. Yamashita,  A. Komatsu,  D. Zade,  K. Kakushima,  H. Iwai,  H. Nohira,  

[Date]2011/10/13
[Paper #]SDM2011-106
A study on contact resistivity lowering of PtSi by alloying with low work function metals

Shun-ichiro OHMI,  

[Date]2011/10/13
[Paper #]SDM2011-107
Effect of Peripheral Region on the Electrical Properties of Pentacene-Based Organic Field-Effect Transistors with HfON Gate Insulator

Min LIAO,  Hiroshi ISHIWARA,  Shun-ichiro OHMI,  

[Date]2011/10/13
[Paper #]SDM2011-108
Experiment-Integrated Multi-scale, Multi-physics Computational Chemistry Methods for Silicon-Materials and Devices

Akira MIYAMOTO,  Ryo NAGUMO,  Ryuji MIURA,  Ai SUZUKI,  Hideyuki TSUBOI,  Nozomu HATAKEYAMA,  Hiromitsu TAKABA,  Sumio KOZAWA,  

[Date]2011/10/13
[Paper #]SDM2011-109
Design Framework for Parameter Fluctuation in MOSFET Damaged by Ion Bombardment during Plasma Etching

Koji ERIGUCHI,  Yoshinori NAKAKUBO,  Asahiko MATSUDA,  Yoshinori TAKAO,  Kouichi ONO,  

[Date]2011/10/13
[Paper #]SDM2011-110
Electrical Characterization Techniques for Si Substrate Damage during Plasma Etching

Yoshinori NAKAKUBO,  Koji ERIGUCHI,  Asahiko MATSUDA,  Yoshinori TAKAO,  Kouichi ONO,  

[Date]2011/10/13
[Paper #]SDM2011-111
High Purity Metal Organic Gas Distribution System

Satoru YAMASHITA,  Hidekazu ISHII,  Yoshinobu SHIBA,  Masafumi KITANO,  Yasuyuki SHIRAI,  Shigetoshi SUGAWA,  Tadahiro OHMI,  

[Date]2011/10/13
[Paper #]SDM2011-112
Performance Evaluation of 3D FPGA using Through Silicon Via

Naoto MIYAMOTO,  Yohei MATSUMOTO,  Hanpei KOIKE,  Tadayuki MATSUMURA,  Kenichi OSADA,  Yaoko NAKAGAWA,  Tadahiro OHMI,  

[Date]2011/10/13
[Paper #]SDM2011-113
Silicon Wafer Wet Etching for Plug Protrusion of 3D chip-stacking technology with Through Silicon Via

Kazuhiro YOSHIKAWA,  Tatsuro YOSHIDA,  Kazuki SOEDA,  Ryosuke HIRATSUKA,  Tadahiro OHMI,  

[Date]2011/10/13
[Paper #]SDM2011-114
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