Electronics-Silicon Devices and Materials(Date:2011/06/27)

Presentation
表紙

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[Date]2011/6/27
[Paper #]
目次

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[Date]2011/6/27
[Paper #]
High Temperature Annealing with MIPS Structure for Improving Interfacial Property at La-silicate/Si Interface and Achieving Scaled EOT

Takamasa Kawanago,  Kuniyuki Kakushima,  Parhat Ahmet,  Kazuo Tsutsui,  Akira Nishiyama,  Nobuyuki Sugii,  Kenji Natori,  Takeo Hattori,  Hiroshi Iwai,  

[Date]2011/6/27
[Paper #]SDM2011-50
Structure and Formation of Epitaxial Graphene on SiC(0001)

Hiroyuki KAGESHIMA,  Hiroki HIBINO,  Hiroshi YAMAGUCHI,  Masao NAGASE,  

[Date]2011/6/27
[Paper #]SDM2011-51
Fabrication of SiC-MOSFETs with Al_2O_3 gate insulator

Hiroyuki YAMADA,  Akio ISHIGURO,  Shiro HINO,  Naruhisa MIURA,  Masayuki IMAIZUMI,  Hiroaki SUMITANI,  Eisuke TOKUMITSU,  

[Date]2011/6/27
[Paper #]SDM2011-52
Defect analysis of HfO_2/In_<0.53>Ga_<0.47>As interface using capacitance-voltage and conductance methods

Darius Zade,  Ryuji Hosoi,  Parhat Ahmet,  Kuniyuki Kakushima,  Kazuo Tsutsui,  Akira Nishiyama,  Nobuyuki Sugii,  Kenji Natori,  Takeo Hattori,  Hiroshi Iwai,  

[Date]2011/6/27
[Paper #]SDM2011-53
Characterization of initial oxidation process on high-index silicon surfaces by real-time photoemission spectroscopy

Shinya Ohno,  Kei Inoue,  Masahiro Morimoto,  Sadanori Arae,  Hiroaki Toyoshima,  Akitaka Yoshigoe,  Yuden Teraoka,  Shoichi Ogata,  Tetsuji Yasuda,  Masatoshi Tanaka,  

[Date]2011/6/27
[Paper #]SDM2011-54
Dependence of carrier traps at SiO_2/Si interfaces on Si surface orientation studied by XPS time-dependent measurement

Y. Ishihara,  Y. Shibuya,  S. Igarashi,  D. Kobayashi,  H. Nohira,  K. Ueno,  K. Hirose,  

[Date]2011/6/27
[Paper #]SDM2011-55
Photoluminescence and interface properties of Si nanolayers and nanowires

Yoko SAKURAI,  Kenji OHMORI,  Keisaku YAMADA,  Kuniyuki KAKUSHIMA,  Hiroshi IWAI,  Kenji SHIRAISHI,  Shintaro NOMURA,  

[Date]2011/6/27
[Paper #]SDM2011-56
Evaluation of Light Induced Damages in Plasma Process on Electrical Properties of Al_2O_3/Ge Gate Stack Structure

Kusumandari K,  Wakana Takeuchi,  Kimihiko Kato,  Shigehisa Shibayama,  Mitsuo Sakashita,  Osamu Nakatsuka,  Shigeaki Zaima,  

[Date]2011/6/27
[Paper #]SDM2011-57
Control of Interfacial Reactions in HfO_2 Atomic-Layer-Deposition on Ge(100) and Post-deposition Anneal with Ultrathin TiO_x Capping on Ge(100)

Hideki MURAKAMI,  Tomohiro FUJIOKA,  Akio OHTA,  Kento MISHIMA,  Seiichiro HIGASHI,  Seiichi MIYAZAKI,  

[Date]2011/6/27
[Paper #]SDM2011-58
Effect of O_2 Annealing for Al_2O_3/Ge Structure on Interfacial Properties

Shigehisa Shibayama,  Kimihiko Kato,  Mitsuo Sakashita,  Wakana Takeuchi,  Osamu Nakatsuka,  Shigeaki Zaima,  

[Date]2011/6/27
[Paper #]SDM2011-59
Control of Interfacial Reactions in Pr Oxide/Ge Structures Based on Valence State of Pr

Kimihiko KATO,  Mitsuo SAKASHITA,  Wakana TAKEUCHI,  Osamu NAKATSUKA,  Shigeaki ZAIMA,  

[Date]2011/6/27
[Paper #]SDM2011-60
Photoemission Study of Chemical Bonding Features at Metal/GeO_2 Interfaces

Masafumi Matsui,  Tomohiro Fujioka,  Akio Ohta,  Hideki Murakami,  Seiichiro Higashi,  Seiichi Miyazaki,  

[Date]2011/6/27
[Paper #]SDM2011-61
Schottky-barrier change by structural disorders at metal/Si interfaces : First-principles study

Kyosuke KOBINATA,  Takashi NAKAYAMA,  

[Date]2011/6/27
[Paper #]SDM2011-62
Effects of foreign atom incorporation into HfO_2 dielectrics : Examination using a first-principles method

Toshinori NAKAYAMA,  Hiroshi KAWASAKI,  Takuya MARUIZUMI,  

[Date]2011/6/27
[Paper #]SDM2011-63
The effect of oxidation and reduction annealing on Vfb shift in ITO/HfO_2 MOS capacitors

Toshihide NABATAME,  Hiroyuki YAMADA,  Akihiko OHI,  Tomoji OHISHI,  Toyohiro CHIKYOW,  

[Date]2011/6/27
[Paper #]SDM2011-64
Hf and La upward diffusion into TiN electrode in TiN/HfLaSiO/SiO_2 gate stacks induced by high-temperature annealing and its suppression with MIPS structure

Yuki ODAKE,  Hiroaki ARIMURA,  Masayuki SAEKI,  Keisuke CHIKARAISHI,  Naomu KITANO,  Takuji HOSOI,  Takayoshi SHIMURA,  Heiji WATANABE,  

[Date]2011/6/27
[Paper #]SDM2011-65
Evaluation of Electrical Property at SrTiO_3 Bicrystal Interface by EBIC

Tetsuji KATO,  Son Phu Thanh PHAM,  Yoshiaki NAKAMURA,  Jun KIKKAWA,  Akira SAKA,  

[Date]2011/6/27
[Paper #]SDM2011-66
Resistive Switching Properties of Si-Oxide Thin Films Prepared by RF Sputtering

A. Ohta,  Y. Goto,  S. Nishigaki,  G. Wei,  H. Murakami,  S. Higashi,  S. Miyazaki,  

[Date]2011/6/27
[Paper #]SDM2011-67
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