Electronics-Silicon Devices and Materials(Date:2011/01/31)

Presentation
表紙

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[Date]2011/1/31
[Paper #]
目次

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[Date]2011/1/31
[Paper #]
Technical Challenges for 3D Packaging and Chip Package Interaction

Yasumitsu Orii,  Kazushige Toriyama,  Akihiro Horibe,  Keiji Matsumoto,  Katsuyuki Sakuma,  

[Date]2011/1/31
[Paper #]SDM2010-216
Path-finding for Integration of Robust Low-k (k～2.5) SiOCH in System LSI

Naoya INOUE,  Makoto UEKI,  Hironori YAMAMOTO,  Ippei KUME,  Jun KAWAHARA,  Manabu IGUCHI,  Hirokazu HONDA,  Yoshitaka HORIKOSHI,  Yoshihiro HAYASHI,  

[Date]2011/1/31
[Paper #]SDM2010-217
Application of Compliant Bump Technology to Image Sensor

Naoya WATANABE,  Tanemasa ASANO,  

[Date]2011/1/31
[Paper #]SDM2010-218
A highly reliable Cu interconnects with CuSiN and Ti-based barrier metal : Impact of oxygen surface treatment

Yumi HAYASHI,  Noriaki MATSUNAGA,  Makoto WADA,  Shinichi NAKAO,  Kei WATANABE,  Satoshi KATO,  Atsuko SAKATA,  Akihiro KAJITA,  Hideki SHIBATA,  

[Date]2011/1/31
[Paper #]SDM2010-219
Networked nanographite growth using photoemission-assisted enhanced plasma CVD : discharge condition dependence of the crystallographic quality

Shuichi OGAWA,  Motonobu SATO,  Haruki SUMI,  Mizuhisa NIHEI,  Yuji TAKAKUWA,  

[Date]2011/1/31
[Paper #]SDM2010-220
Dependence of Ti-Based Self-Formed Barrier Structure on Dielectric-Layer Composition

Kazuyuki KOHAMA,  Kazuhiro ITO,  Yutaka SONOBAYASHI,  Kazuyuki OHMORI,  Kenichi MORI,  Kazuyoshi MAEKAWA,  Yasuharu SHIRAI,  Masanori MURAKAMI,  

[Date]2011/1/31
[Paper #]SDM2010-221
Networked-Nanographite Wire Grown by Metal-Photoemission-assisted Plasma-enhanced CVD without Catalysts

Motonobu SATO,  Shuichi OGAWA,  Eiji IKENAGA,  Yuji TAKAKUWA,  Mizuhisa NIHEI,  Naoki YOKOYAMA,  

[Date]2011/1/31
[Paper #]SDM2010-222
Stress Mapping in Thinned Si wafer with Cu-TSV and CuSn microbumps

Murugesan Mariappan,  Takafumi Fukushima,  Tetsu Tanaka,  Mitsumasa Koyanagi,  

[Date]2011/1/31
[Paper #]SDM2010-223
Development of Low Temperature Bump-less TSV Process in 3D Stacking Technology

Hideki KITADA,  Nobuhide MAEDA,  Koji FUJIMOTO,  Yoriko MIZUSHIMA,  Yoshihiro NAKATA,  Tomoji NAKAMURA,  Takayuki OHBA,  

[Date]2011/1/31
[Paper #]SDM2010-224
Highly hermetic barrier Low-k SiC (k<3.5) by using new precursor

Tatsuya Usami,  Chikako KOBAYASHI,  Yukio MIURA,  Shuji NAGANO,  Koichi OHTO,  Hideharu SHIMIZU,  Takeshi KADA,  Tatsuya OHIRA,  Kunihiro FUJII,  

[Date]2011/1/31
[Paper #]SDM2010-225
Highly Manufacturable ELK Integration Technology with Metal Hard Mask Process for High Performance 32nm-node Interconnect and Beyond

S. MATSUMOTO,  T. HARADA,  Y. MORINAGA,  D. INAGAKI,  J. SHIBATA,  K. TASHIRO,  T. KABE,  A. IWASAKI,  S. HIRAO,  M. TSUTSUE,  K. NOMURA,  K. SEO,  T. HINOMURA,  N. TORAZAWA,  S. SUZUKI,  K. KOBAYASHI,  H. KOROGI,  H. OKAMURA,  Y. KANDA,  T. SHIGETOSHI,  M. WATANABE,  K. TOMIYAMA,  H. SHIMIZU,  M. MATSUMOTO,  T. SASAKI,  T. HAMATANI,  K. HAGIHARA,  T. UEDA,  

[Date]2011/1/31
[Paper #]SDM2010-226
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