Electronics-Silicon Devices and Materials(Date:2011/01/24)

Presentation
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[Date]2011/1/24
[Paper #]
目次

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[Date]2011/1/24
[Paper #]
Self-aligned metal Source/Drain In_xGa_<1-x>As n-MOSFETs using Ni-InGaAs alloy

S. H. Kim,  M. Yokoyama,  N. Taoka,  R. Iida,  S. Lee,  R. Nakane,  Y. Urabe,  N. Miyata,  T. Yasuda,  H. Yamada,  N. Fukuhara,  M. Hata,  M. Takenaka,  S. Takagi,  

[Date]2011/1/24
[Paper #]SDM2010-204
Theory of Workfunction Control of Silicides by Doping for Future Si-Nano-Devices based on Fundamental Physics of Why Silicides Exist in Nature

T. Nakayama,  K. Kakushima,  O. Nakatsuka,  Y. Machida,  S. Sotome,  T. Matsuki,  K. Ohmori,  H. Iwai,  S. Zaima,  T. Chikyow,  K. Shiraishi,  K. Yamada,  

[Date]2011/1/24
[Paper #]SDM2010-205
Ge MOSFETs performance : Impact of Interface Passivation

Choong Hyun LEE,  Tomonori NISHIMURA,  Toshiyuki TABATA,  Sheng Kai WANG,  Kosuke NAGASHIO,  Koji KITA,  Akira TORIUMI,  

[Date]2011/1/24
[Paper #]SDM2010-206
Characterization of Statistical Distribution of RTN Trap Position, Energy, Amplitude and Time Constants

Toshiharu NAGUMO,  Kiyoshi TAKEUCHI,  Takashi HASE,  Yoshihiro HAYASHI,  

[Date]2011/1/24
[Paper #]SDM2010-207
GaN, SiC Power Electronics for Automotive Systems

Masakazu KANECHIKA,  Tsutomu UESUGI,  Tetsu KACHI,  

[Date]2011/1/24
[Paper #]SDM2010-208
Atomistic Guiding Principle for MONOS-type Memory Based on Designing Oxygen Chemical Potential

Keita Yamaguchi,  Akira Otake,  Katsumasa Kamiya,  yasuteru Shigeta,  Kenji Shiraishi,  

[Date]2011/1/24
[Paper #]SDM2010-209
Impact of DIBL Variability on SRAM Static Noise Margin Analyzed by DMA SRAM TEG

X. Song,  M. Suzuki,  T. Saraya,  A. Nishida,  T. Tsunomura,  S. Kamohara,  K. Takeuchi,  S. Inaba,  T. Mogami,  T. Hiramoto,  

[Date]2011/1/24
[Paper #]SDM2010-210
Direct Visualization of Anomalous-Phosphorus Diffusion in Failure-Bit Gates of SRAM-Load pMOSFETs with High-Resolution Scanning Spreading Resistance Microscopy

Zhang Li,  Keiryo Hara,  Atsuhiro Kinoshita,  Tsuneyuki Hashimoto,  Youhei Hayase,  Michio Kurihara,  Daisuke Hagishima,  Takayuki Ishikawa,  Shiro Takeno,  

[Date]2011/1/24
[Paper #]SDM2010-211
Anomalous Electron Mobility in Extremely-Thin SOI (ETSOI) Diffusion Layers with High Doping Concentration

Naotoshi KADOTANI,  Tsunaki TAKAHASHI,  Kunro CHEN,  Tetsuo KODERA,  Shunri ODA,  Ken UCHIDA,  

[Date]2011/1/24
[Paper #]SDM2010-212
A New Approach for Steep Subthreshold Swing (SS) FET

Digh HISAMOTO,  Shin-ichi SAITO,  Akio SHIMA,  Hiroyuki YOSHIMOTO,  Kazuyoshi TORII,  Eiji TAKEDA,  

[Date]2011/1/24
[Paper #]SDM2010-213
Short-Channel Mobility Analysis and Performance Improvement by Stress Memorization Technique (SMT) in Tri-Gate Nanowire MOSFETs

Masumi SAITOH,  Yukio NAKABAYASHI,  Kensuke OTA,  Ken UCHIDA,  Toshinori NUMATA,  

[Date]2011/1/24
[Paper #]SDM2010-214
Experimental Study on Carrier Transport Properties of Nanowire CMOS with 10nm Width

Kiichi Tachi,  Mikael Casse,  Sylvain Barraud,  Cecilia Dupre,  Alexandre Hubert,  Nathalie Vulliet,  Marie-Emmanuelle Faivre,  Christian Vizioz,  Catherine Carabasse,  Vincent Delaye,  Jean-Michel Hartmann,  Hiroshi Iwai,  Sorin Cristoloveanu,  Olivier Faynot,  Thomas Ernst,  

[Date]2011/1/24
[Paper #]SDM2010-215
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[Date]2011/1/24
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