Electronics-Silicon Devices and Materials(Date:2010/11/04)

Presentation
表紙

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[Date]2010/11/4
[Paper #]
目次

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[Date]2010/11/4
[Paper #]
2010 SISPAD Review

Yoshinari KAMAKURA,  

[Date]2010/11/4
[Paper #]SDM2010-171
Latest Trends in Simulation and Characterization of Statistical CMOS Variability and Reliability: Review of 2010 SISPAD Workshop1

Shuichi TORIYAMA,  

[Date]2010/11/4
[Paper #]SDM2010-172
Trends of Magnetic Memory; Multi-Level-Cell Spin Transfer Torque Memory

Takashi ISHIGAKI,  Takayuki KAWAHARA,  Riichiro TAKEMURA,  Kazuo ONO,  Kenchi ITO,  Hideo OHNO,  

[Date]2010/11/4
[Paper #]SDM2010-173
Statistical Evaluation of Random Telegraph Sygnal in MOSFET

Akinobu Teramoto,  Kenichi Abe,  Shigetoshi Sugawa,  Tadahiro Ohmi,  

[Date]2010/11/4
[Paper #]SDM2010-174
Comprehensive understanding of oxygen vacancy induced effective work function modulation in high-k/metal gate stacks

Takuji HOSOI,  Masayuki SAEKI,  Yuki KITA,  Yudai OKU,  Hiroaki ARIMURA,  Naomu KITANO,  Kenji SHIRAISHI,  Keisaku YAMADA,  Takayoshi SHIMURA,  Heiji WATANABE,  

[Date]2010/11/4
[Paper #]SDM2010-175
High Transient Performance of Low-Dropout(LDO) Regulator

fouzhiwei TONG,  Cong-Kha PHAM,  

[Date]2010/11/4
[Paper #]SDM2010-176
Topography simulation of BiCS memory hole etching and modeling of SiO_2 and Si etching

Takashi Ichikawa,  Daigo Ichinose,  Kenji Kawabata,  Naoki Tamaoki,  

[Date]2010/11/4
[Paper #]SDM2010-177
Development of Automated System of Ultra-Accelerated Quantum Chemical Molecular Dynamics Method and Oxidation Simulation of Silicon Surface

Hideyuki TSUBOI,  Kenji INABA,  Mariko ISE,  Yukie HAYASHI,  Yuka SUZUKI,  Hiromi SATO,  Yukiko OBARA,  Ryou NAGUMO,  Ryuji MIURA,  Ai SUZUKI,  Nozomu HATAKEYAMA,  Akira ENDOU,  Hiromitsu TAKABA,  Momoji KUBO,  Akira MIYAMOTO,  

[Date]2010/11/4
[Paper #]SDM2010-178
An Overview of VLSI Design Automation and Its Future Prospective

Atsushi TAKAHASHI,  

[Date]2010/11/4
[Paper #]SDM2010-179
Modeling of Single-Event-Transient Pulse Generation in Inverter Cells

Katsuhiko TANAKA,  Hideyuki NAKAMURA,  Taiki UEMURA,  Kan TAKEUCHI,  Toshikazu FUKUDA,  Shigetaka KUMASHIRO,  Tohru MOGAMI,  

[Date]2010/11/4
[Paper #]SDM2010-180
Modeling of 2D Bias Control in Overlap Region of High-Voltage MOSFETs

Akihiro TANAKA,  Yasunori ORITSUKI,  Hideyuki KIKUCHIHARA,  Masataka MIYAKE,  Mattausch Hans JUERGEN,  Mitiko Miura-Mattausch,  Yong Liu,  Keith Green,  

[Date]2010/11/4
[Paper #]SDM2010-181
Proposal of a Fitting Accuracy Metric suitable for Compact Model Qualification in all MOSFET Operation Region

Hironori SAKAMOTO,  Takahiro IIZUKA,  

[Date]2010/11/4
[Paper #]SDM2010-182
Strain Dependence of Hole Currents in Silicon Nanowire FETs

Hideki MINARI,  Tatsuro KITAYAMA,  Masahiro YAMAMOTO,  Nobuya MORI,  

[Date]2010/11/4
[Paper #]SDM2010-183
Design Feasibility of Si Wire GAA MOSFET : Analytical model for the design guideline

Shunsuke NAKANO,  Yasuhisa OMURA,  

[Date]2010/11/4
[Paper #]SDM2010-184
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[Date]2010/11/4
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